Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Autores
Kayis, C.; Ferreyra, Romualdo Alejandro; Wu, M.; Li, Xiaolin; Ozgur, U.; Matulionis, A.; Morkoç, H.
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of V DS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 10 12 cm -2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. © 2011 American Institute of Physics.
Fil: Kayis, C.. Virginia Commonwealth University; Estados Unidos
Fil: Ferreyra, Romualdo Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Virginia Commonwealth University; Estados Unidos
Fil: Wu, M.. Virginia Commonwealth University; Estados Unidos
Fil: Li, Xiaolin. Virginia Commonwealth University; Estados Unidos
Fil: Ozgur, U.. Virginia Commonwealth University; Estados Unidos
Fil: Matulionis, A.. Center for Physical Science and Technology; Lituania
Fil: Morkoç, H.. Virginia Commonwealth University; Estados Unidos
Materia
GaN
Degradation
HFET
Low-frequency noise
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/66392
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effectsKayis, C.Ferreyra, Romualdo AlejandroWu, M.Li, XiaolinOzgur, U.Matulionis, A.Morkoç, H.GaNDegradationHFETLow-frequency noisehttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of V DS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 10 12 cm -2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. © 2011 American Institute of Physics.Fil: Kayis, C.. Virginia Commonwealth University; Estados UnidosFil: Ferreyra, Romualdo Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Virginia Commonwealth University; Estados UnidosFil: Wu, M.. Virginia Commonwealth University; Estados UnidosFil: Li, Xiaolin. Virginia Commonwealth University; Estados UnidosFil: Ozgur, U.. Virginia Commonwealth University; Estados UnidosFil: Matulionis, A.. Center for Physical Science and Technology; LituaniaFil: Morkoç, H.. Virginia Commonwealth University; Estados UnidosAmerican Institute of Physics2011-08-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/66392Kayis, C.; Ferreyra, Romualdo Alejandro; Wu, M.; Li, Xiaolin; Ozgur, U.; et al.; Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects; American Institute of Physics; Applied Physics Letters; 99; 6; 9-8-2011; 63505/1-63505/30003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/full/10.1063/1.3624702info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3624702info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:36:23Zoai:ri.conicet.gov.ar:11336/66392instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:36:23.68CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
title Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
spellingShingle Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
Kayis, C.
GaN
Degradation
HFET
Low-frequency noise
title_short Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
title_full Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
title_fullStr Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
title_full_unstemmed Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
title_sort Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
dc.creator.none.fl_str_mv Kayis, C.
Ferreyra, Romualdo Alejandro
Wu, M.
Li, Xiaolin
Ozgur, U.
Matulionis, A.
Morkoç, H.
author Kayis, C.
author_facet Kayis, C.
Ferreyra, Romualdo Alejandro
Wu, M.
Li, Xiaolin
Ozgur, U.
Matulionis, A.
Morkoç, H.
author_role author
author2 Ferreyra, Romualdo Alejandro
Wu, M.
Li, Xiaolin
Ozgur, U.
Matulionis, A.
Morkoç, H.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv GaN
Degradation
HFET
Low-frequency noise
topic GaN
Degradation
HFET
Low-frequency noise
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of V DS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 10 12 cm -2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. © 2011 American Institute of Physics.
Fil: Kayis, C.. Virginia Commonwealth University; Estados Unidos
Fil: Ferreyra, Romualdo Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Virginia Commonwealth University; Estados Unidos
Fil: Wu, M.. Virginia Commonwealth University; Estados Unidos
Fil: Li, Xiaolin. Virginia Commonwealth University; Estados Unidos
Fil: Ozgur, U.. Virginia Commonwealth University; Estados Unidos
Fil: Matulionis, A.. Center for Physical Science and Technology; Lituania
Fil: Morkoç, H.. Virginia Commonwealth University; Estados Unidos
description Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of V DS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 10 12 cm -2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. © 2011 American Institute of Physics.
publishDate 2011
dc.date.none.fl_str_mv 2011-08-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/66392
Kayis, C.; Ferreyra, Romualdo Alejandro; Wu, M.; Li, Xiaolin; Ozgur, U.; et al.; Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects; American Institute of Physics; Applied Physics Letters; 99; 6; 9-8-2011; 63505/1-63505/3
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/66392
identifier_str_mv Kayis, C.; Ferreyra, Romualdo Alejandro; Wu, M.; Li, Xiaolin; Ozgur, U.; et al.; Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects; American Institute of Physics; Applied Physics Letters; 99; 6; 9-8-2011; 63505/1-63505/3
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/full/10.1063/1.3624702
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3624702
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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