Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Autores
Kovács, A.; Schaffer, B.; Moreno, Mario Sergio Jesus; Jinschek, J. R.; Craven, A. J.; Dietl, T.; Bonanni, A.; Dunin Borkowski, R. E.
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Nanometric inclusions filled with nitrogen, located adjacent to FenN (n ¼ 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 6 0.3 g/cm3 . These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n > 1) nanocrystals during growth.
Fil: Kovács, A.. Peter Grunberg Institute; Alemania
Fil: Schaffer, B.. University of Glasgow; Reino Unido
Fil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Jinschek, J. R.. FEI Company; Países Bajos
Fil: Craven, A. J.. University of Glasgow; Reino Unido
Fil: Dietl, T.. Polish Academy of Sciences; Argentina
Fil: Bonanni, A.. Johannes Kepler University; Austria
Fil: Dunin Borkowski, R. E.. Peter Grunberg Institute; Alemania
Materia
EELS
STEM
Nanocrystals
GaN
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/20942
Acceder
id CONICETDig_d562a2f8326ea2b4805695128d4969ba
oai_identifier_str oai:ri.conicet.gov.ar:11336/20942
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopyKovács, A.Schaffer, B.Moreno, Mario Sergio JesusJinschek, J. R.Craven, A. J.Dietl, T.Bonanni, A.Dunin Borkowski, R. E.EELSSTEMNanocrystalsGaNhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Nanometric inclusions filled with nitrogen, located adjacent to FenN (n ¼ 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 6 0.3 g/cm3 . These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n > 1) nanocrystals during growth.Fil: Kovács, A.. Peter Grunberg Institute; AlemaniaFil: Schaffer, B.. University of Glasgow; Reino UnidoFil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Jinschek, J. R.. FEI Company; Países BajosFil: Craven, A. J.. University of Glasgow; Reino UnidoFil: Dietl, T.. Polish Academy of Sciences; ArgentinaFil: Bonanni, A.. Johannes Kepler University; AustriaFil: Dunin Borkowski, R. E.. Peter Grunberg Institute; AlemaniaAmerican Institute Of Physics2013-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/20942Kovács, A.; Schaffer, B.; Moreno, Mario Sergio Jesus; Jinschek, J. R.; Craven, A. J.; et al.; Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy; American Institute Of Physics; Journal Of Applied Physics; 114; 3; 7-2013; 1-7; 0335300021-8979enginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4816049info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4816049info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:01:37Zoai:ri.conicet.gov.ar:11336/20942instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:01:37.657CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
title Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
spellingShingle Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
Kovács, A.
EELS
STEM
Nanocrystals
GaN
title_short Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
title_full Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
title_fullStr Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
title_full_unstemmed Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
title_sort Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
dc.creator.none.fl_str_mv Kovács, A.
Schaffer, B.
Moreno, Mario Sergio Jesus
Jinschek, J. R.
Craven, A. J.
Dietl, T.
Bonanni, A.
Dunin Borkowski, R. E.
author Kovács, A.
author_facet Kovács, A.
Schaffer, B.
Moreno, Mario Sergio Jesus
Jinschek, J. R.
Craven, A. J.
Dietl, T.
Bonanni, A.
Dunin Borkowski, R. E.
author_role author
author2 Schaffer, B.
Moreno, Mario Sergio Jesus
Jinschek, J. R.
Craven, A. J.
Dietl, T.
Bonanni, A.
Dunin Borkowski, R. E.
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv EELS
STEM
Nanocrystals
GaN
topic EELS
STEM
Nanocrystals
GaN
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Nanometric inclusions filled with nitrogen, located adjacent to FenN (n ¼ 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 6 0.3 g/cm3 . These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n > 1) nanocrystals during growth.
Fil: Kovács, A.. Peter Grunberg Institute; Alemania
Fil: Schaffer, B.. University of Glasgow; Reino Unido
Fil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Jinschek, J. R.. FEI Company; Países Bajos
Fil: Craven, A. J.. University of Glasgow; Reino Unido
Fil: Dietl, T.. Polish Academy of Sciences; Argentina
Fil: Bonanni, A.. Johannes Kepler University; Austria
Fil: Dunin Borkowski, R. E.. Peter Grunberg Institute; Alemania
description Nanometric inclusions filled with nitrogen, located adjacent to FenN (n ¼ 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 6 0.3 g/cm3 . These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n > 1) nanocrystals during growth.
publishDate 2013
dc.date.none.fl_str_mv 2013-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/20942
Kovács, A.; Schaffer, B.; Moreno, Mario Sergio Jesus; Jinschek, J. R.; Craven, A. J.; et al.; Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy; American Institute Of Physics; Journal Of Applied Physics; 114; 3; 7-2013; 1-7; 033530
0021-8979
url http://hdl.handle.net/11336/20942
identifier_str_mv Kovács, A.; Schaffer, B.; Moreno, Mario Sergio Jesus; Jinschek, J. R.; Craven, A. J.; et al.; Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy; American Institute Of Physics; Journal Of Applied Physics; 114; 3; 7-2013; 1-7; 033530
0021-8979
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4816049
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4816049
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute Of Physics
publisher.none.fl_str_mv American Institute Of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269707680350208
score 13.13397

Publicaciones similares