Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
- Autores
- Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; Santos, Elizabeth del Carmen; Lazarescu, Valentina
- Año de publicación
- 2011
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion.
Fil: Preda, Loredana. No especifíca;
Fil: Negrila, Catalin. No especifíca;
Fil: Lazarescu, Mihail F.. No especifíca;
Fil: Anastasescu, Mihai. No especifíca;
Fil: Dobrescu, Gianina. No especifíca;
Fil: Santos, Elizabeth del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
Fil: Lazarescu, Valentina. No especifíca; - Materia
-
second harmonic generation
GaAs
Hemin
Impedance - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/279147
Ver los metadatos del registro completo
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Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodesPreda, LoredanaNegrila, CatalinLazarescu, Mihail F.Anastasescu, MihaiDobrescu, GianinaSantos, Elizabeth del CarmenLazarescu, Valentinasecond harmonic generationGaAsHeminImpedancehttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion.Fil: Preda, Loredana. No especifíca;Fil: Negrila, Catalin. No especifíca;Fil: Lazarescu, Mihail F.. No especifíca;Fil: Anastasescu, Mihai. No especifíca;Fil: Dobrescu, Gianina. No especifíca;Fil: Santos, Elizabeth del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; ArgentinaFil: Lazarescu, Valentina. No especifíca;Royal Society of Chemistry2011-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/279147Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; et al.; Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 13; 38; 8-2011; 17104-171141463-9076CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.rsc.org/en/content/articlelanding/2011/cp/c1cp21652jinfo:eu-repo/semantics/altIdentifier/doi/10.1039/C1CP21652Jinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-01-14T12:22:19Zoai:ri.conicet.gov.ar:11336/279147instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-01-14 12:22:19.616CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| title |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| spellingShingle |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes Preda, Loredana second harmonic generation GaAs Hemin Impedance |
| title_short |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| title_full |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| title_fullStr |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| title_full_unstemmed |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| title_sort |
Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes |
| dc.creator.none.fl_str_mv |
Preda, Loredana Negrila, Catalin Lazarescu, Mihail F. Anastasescu, Mihai Dobrescu, Gianina Santos, Elizabeth del Carmen Lazarescu, Valentina |
| author |
Preda, Loredana |
| author_facet |
Preda, Loredana Negrila, Catalin Lazarescu, Mihail F. Anastasescu, Mihai Dobrescu, Gianina Santos, Elizabeth del Carmen Lazarescu, Valentina |
| author_role |
author |
| author2 |
Negrila, Catalin Lazarescu, Mihail F. Anastasescu, Mihai Dobrescu, Gianina Santos, Elizabeth del Carmen Lazarescu, Valentina |
| author2_role |
author author author author author author |
| dc.subject.none.fl_str_mv |
second harmonic generation GaAs Hemin Impedance |
| topic |
second harmonic generation GaAs Hemin Impedance |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
| dc.description.none.fl_txt_mv |
Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion. Fil: Preda, Loredana. No especifíca; Fil: Negrila, Catalin. No especifíca; Fil: Lazarescu, Mihail F.. No especifíca; Fil: Anastasescu, Mihai. No especifíca; Fil: Dobrescu, Gianina. No especifíca; Fil: Santos, Elizabeth del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina Fil: Lazarescu, Valentina. No especifíca; |
| description |
Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion. |
| publishDate |
2011 |
| dc.date.none.fl_str_mv |
2011-08 |
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info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
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article |
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publishedVersion |
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http://hdl.handle.net/11336/279147 Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; et al.; Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 13; 38; 8-2011; 17104-17114 1463-9076 CONICET Digital CONICET |
| url |
http://hdl.handle.net/11336/279147 |
| identifier_str_mv |
Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; et al.; Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 13; 38; 8-2011; 17104-17114 1463-9076 CONICET Digital CONICET |
| dc.language.none.fl_str_mv |
eng |
| language |
eng |
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info:eu-repo/semantics/altIdentifier/url/https://pubs.rsc.org/en/content/articlelanding/2011/cp/c1cp21652j info:eu-repo/semantics/altIdentifier/doi/10.1039/C1CP21652J |
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info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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openAccess |
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https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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application/pdf application/pdf |
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Royal Society of Chemistry |
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Royal Society of Chemistry |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
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dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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