Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes

Autores
Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; Santos, Elizabeth del Carmen; Lazarescu, Valentina
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion.
Fil: Preda, Loredana. No especifíca;
Fil: Negrila, Catalin. No especifíca;
Fil: Lazarescu, Mihail F.. No especifíca;
Fil: Anastasescu, Mihai. No especifíca;
Fil: Dobrescu, Gianina. No especifíca;
Fil: Santos, Elizabeth del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
Fil: Lazarescu, Valentina. No especifíca;
Materia
second harmonic generation
GaAs
Hemin
Impedance
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/279147

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network_name_str CONICET Digital (CONICET)
spelling Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodesPreda, LoredanaNegrila, CatalinLazarescu, Mihail F.Anastasescu, MihaiDobrescu, GianinaSantos, Elizabeth del CarmenLazarescu, Valentinasecond harmonic generationGaAsHeminImpedancehttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion.Fil: Preda, Loredana. No especifíca;Fil: Negrila, Catalin. No especifíca;Fil: Lazarescu, Mihail F.. No especifíca;Fil: Anastasescu, Mihai. No especifíca;Fil: Dobrescu, Gianina. No especifíca;Fil: Santos, Elizabeth del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; ArgentinaFil: Lazarescu, Valentina. No especifíca;Royal Society of Chemistry2011-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/279147Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; et al.; Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 13; 38; 8-2011; 17104-171141463-9076CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.rsc.org/en/content/articlelanding/2011/cp/c1cp21652jinfo:eu-repo/semantics/altIdentifier/doi/10.1039/C1CP21652Jinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-01-14T12:22:19Zoai:ri.conicet.gov.ar:11336/279147instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-01-14 12:22:19.616CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
title Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
spellingShingle Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
Preda, Loredana
second harmonic generation
GaAs
Hemin
Impedance
title_short Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
title_full Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
title_fullStr Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
title_full_unstemmed Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
title_sort Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes
dc.creator.none.fl_str_mv Preda, Loredana
Negrila, Catalin
Lazarescu, Mihail F.
Anastasescu, Mihai
Dobrescu, Gianina
Santos, Elizabeth del Carmen
Lazarescu, Valentina
author Preda, Loredana
author_facet Preda, Loredana
Negrila, Catalin
Lazarescu, Mihail F.
Anastasescu, Mihai
Dobrescu, Gianina
Santos, Elizabeth del Carmen
Lazarescu, Valentina
author_role author
author2 Negrila, Catalin
Lazarescu, Mihail F.
Anastasescu, Mihai
Dobrescu, Gianina
Santos, Elizabeth del Carmen
Lazarescu, Valentina
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv second harmonic generation
GaAs
Hemin
Impedance
topic second harmonic generation
GaAs
Hemin
Impedance
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion.
Fil: Preda, Loredana. No especifíca;
Fil: Negrila, Catalin. No especifíca;
Fil: Lazarescu, Mihail F.. No especifíca;
Fil: Anastasescu, Mihai. No especifíca;
Fil: Dobrescu, Gianina. No especifíca;
Fil: Santos, Elizabeth del Carmen. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
Fil: Lazarescu, Valentina. No especifíca;
description Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) investigations on the redox behavior of hemin at bare and 4,4′-thio-bis-benzene-thiolate (TBBT) covered n-GaAs (110) electrodes in dimethylsulfoxide (DMSO) revealed the high irreversibility of the electroreduction process, which appeared to be closely related to the stable adsorbed species strongly interfering with the electronic properties of the semiconducting substrate. The subsequent exploration of the hemin-modified electrodes by second harmonic generation (SHG), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements pointed to significant differences between the iron protoporphyrin species adsorbed on the bare- and TBBT–GaAs (110) electrodes. Only Fe2+ species having a flat configuration with the porphyrin plane oriented parallel to the surface were detected on GaAs, unlike the TBBT–GaAs, where Fe2+ and Fe3+ species having both flat and vertical adsorption positions could be observed. These differences originate from the mutual interactions between the solvent, hemin and dithiolate molecules as well as their competition for the surface sites found to play a key role in the electrochemical process under discussion.
publishDate 2011
dc.date.none.fl_str_mv 2011-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/279147
Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; et al.; Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 13; 38; 8-2011; 17104-17114
1463-9076
CONICET Digital
CONICET
url http://hdl.handle.net/11336/279147
identifier_str_mv Preda, Loredana; Negrila, Catalin; Lazarescu, Mihail F.; Anastasescu, Mihai; Dobrescu, Gianina; et al.; Hemin interaction with bare and 4,4′-thio-bis-benzene-thiolate covered n-GaAs (110) electrodes; Royal Society of Chemistry; Physical Chemistry Chemical Physics; 13; 38; 8-2011; 17104-17114
1463-9076
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://pubs.rsc.org/en/content/articlelanding/2011/cp/c1cp21652j
info:eu-repo/semantics/altIdentifier/doi/10.1039/C1CP21652J
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Royal Society of Chemistry
publisher.none.fl_str_mv Royal Society of Chemistry
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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