Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks

Autores
Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Tang, K.; McIntyre, P.; Palumbo, Félix Roberto Mario
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks is experimentally assessed. Samples fabricated employing forming gas annealing (FGA) or substrate air exposure to obtain different densities of defects were thoroughly characterized and the results were compared with previous literature on the topic. Results indicate a lack of correlation between capacitance-voltage hysteresis and accumulation capacitance dispersion with frequency, suggesting that defects with remarkably different kinetics are involved in each phenomenon. This is assessed through the dependence of the capacitance-voltage hysteresis with DC bias and stress time, observing that permanent interface defect depassivation under bias has no effect on the hysteresis width after stress. Overall, capacitance-voltage hysteresis probes slow trapping mechanisms throughout the oxide and the bandgap, which are consistent with the negative charge trapping characteristic of the current-time curves for FGA samples at constant voltage stress. Instead, accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times that can be linked to the stress induced leakage current of air exposed samples under constant DC stress. Experimental results indicate that each effect must be assessed separately due to the large difference in the kinetics of the probed defects.
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Tang, K.. Stanford University; Estados Unidos
Fil: McIntyre, P.. Stanford University; Estados Unidos
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Materia
Reliability
InGaAs
Nivel de accesibilidad
acceso embargado
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/86118
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/86118
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacksPazos, Sebastián MatíasAguirre, Fernando LeonelTang, K.McIntyre, P.Palumbo, Félix Roberto MarioReliabilityInGaAshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks is experimentally assessed. Samples fabricated employing forming gas annealing (FGA) or substrate air exposure to obtain different densities of defects were thoroughly characterized and the results were compared with previous literature on the topic. Results indicate a lack of correlation between capacitance-voltage hysteresis and accumulation capacitance dispersion with frequency, suggesting that defects with remarkably different kinetics are involved in each phenomenon. This is assessed through the dependence of the capacitance-voltage hysteresis with DC bias and stress time, observing that permanent interface defect depassivation under bias has no effect on the hysteresis width after stress. Overall, capacitance-voltage hysteresis probes slow trapping mechanisms throughout the oxide and the bandgap, which are consistent with the negative charge trapping characteristic of the current-time curves for FGA samples at constant voltage stress. Instead, accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times that can be linked to the stress induced leakage current of air exposed samples under constant DC stress. Experimental results indicate that each effect must be assessed separately due to the large difference in the kinetics of the probed defects.Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Tang, K.. Stanford University; Estados UnidosFil: McIntyre, P.. Stanford University; Estados UnidosFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaAmerican Institute of Physics2018-12info:eu-repo/date/embargoEnd/2020-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/86118Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Tang, K.; McIntyre, P.; Palumbo, Félix Roberto Mario; Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks; American Institute of Physics; Journal of Applied Physics; 124; 22; 12-2018; 1-110021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.5031025info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5031025info:eu-repo/semantics/embargoedAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:45:51Zoai:ri.conicet.gov.ar:11336/86118instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:45:51.911CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
title Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
spellingShingle Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
Pazos, Sebastián Matías
Reliability
InGaAs
title_short Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
title_full Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
title_fullStr Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
title_full_unstemmed Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
title_sort Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks
dc.creator.none.fl_str_mv Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Tang, K.
McIntyre, P.
Palumbo, Félix Roberto Mario
author Pazos, Sebastián Matías
author_facet Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Tang, K.
McIntyre, P.
Palumbo, Félix Roberto Mario
author_role author
author2 Aguirre, Fernando Leonel
Tang, K.
McIntyre, P.
Palumbo, Félix Roberto Mario
author2_role author
author
author
author
dc.subject.none.fl_str_mv Reliability
InGaAs
topic Reliability
InGaAs
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks is experimentally assessed. Samples fabricated employing forming gas annealing (FGA) or substrate air exposure to obtain different densities of defects were thoroughly characterized and the results were compared with previous literature on the topic. Results indicate a lack of correlation between capacitance-voltage hysteresis and accumulation capacitance dispersion with frequency, suggesting that defects with remarkably different kinetics are involved in each phenomenon. This is assessed through the dependence of the capacitance-voltage hysteresis with DC bias and stress time, observing that permanent interface defect depassivation under bias has no effect on the hysteresis width after stress. Overall, capacitance-voltage hysteresis probes slow trapping mechanisms throughout the oxide and the bandgap, which are consistent with the negative charge trapping characteristic of the current-time curves for FGA samples at constant voltage stress. Instead, accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times that can be linked to the stress induced leakage current of air exposed samples under constant DC stress. Experimental results indicate that each effect must be assessed separately due to the large difference in the kinetics of the probed defects.
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Tang, K.. Stanford University; Estados Unidos
Fil: McIntyre, P.. Stanford University; Estados Unidos
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
description The correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks is experimentally assessed. Samples fabricated employing forming gas annealing (FGA) or substrate air exposure to obtain different densities of defects were thoroughly characterized and the results were compared with previous literature on the topic. Results indicate a lack of correlation between capacitance-voltage hysteresis and accumulation capacitance dispersion with frequency, suggesting that defects with remarkably different kinetics are involved in each phenomenon. This is assessed through the dependence of the capacitance-voltage hysteresis with DC bias and stress time, observing that permanent interface defect depassivation under bias has no effect on the hysteresis width after stress. Overall, capacitance-voltage hysteresis probes slow trapping mechanisms throughout the oxide and the bandgap, which are consistent with the negative charge trapping characteristic of the current-time curves for FGA samples at constant voltage stress. Instead, accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times that can be linked to the stress induced leakage current of air exposed samples under constant DC stress. Experimental results indicate that each effect must be assessed separately due to the large difference in the kinetics of the probed defects.
publishDate 2018
dc.date.none.fl_str_mv 2018-12
info:eu-repo/date/embargoEnd/2020-01-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/86118
Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Tang, K.; McIntyre, P.; Palumbo, Félix Roberto Mario; Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks; American Institute of Physics; Journal of Applied Physics; 124; 22; 12-2018; 1-11
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/86118
identifier_str_mv Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Tang, K.; McIntyre, P.; Palumbo, Félix Roberto Mario; Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high- k /n-InGaAs metal-oxide-semiconductor stacks; American Institute of Physics; Journal of Applied Physics; 124; 22; 12-2018; 1-11
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5031025
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5031025
dc.rights.none.fl_str_mv info:eu-repo/semantics/embargoedAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv embargoedAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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