Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant

Autores
Caram, Jorge Pablo; Sandoval Salinas, Claudia Beatriz; Tirado, Monica Cecilia; Comedi, David Mario; Czaban, Josef; Thompson, David; LaPierre, Ray R.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
GaAs nanowire (NW)-based p–n photovoltaic devices, with two distinct p and n spatial distributions and where Te was the n-dopant, have been studied by impedance spectroscopy in the 103–107 Hz frequency range and the − 1.5–1.5 V bias range. For a large n-core/p-shell overlap region within NWs in a coaxial geometry, the p–n junction properties (DC rectification and p–n depletion capacitance) are found to prevail. The impedance data at low bias for both NW devices show large frequency dispersions with relaxation frequencies that are compatible with carrier re-emission times from traps due to GaAs surface states. An increasing conductance with increasing frequency for low bias is observed, suggesting hopping transport through localized states. For large bias the conductance increases exponentially with bias and is frequency independent, indicating conduction through extended states in this regime.
Fil: Caram, Jorge Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Sandoval Salinas, Claudia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán. Instituto de Investigación en Luz, Ambiente y Visión. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Instituto de Investigación en Luz, Ambiente y Visión; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Czaban, Josef. Mc Master University; Canadá
Fil: Thompson, David. Mc Master University; Canadá
Fil: LaPierre, Ray R.. Mc Master University; Canadá
Materia
NANOTECHNOLOGY
GaAs
NANOWIRE
DOPING
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/281036
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/281036
network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopantCaram, Jorge PabloSandoval Salinas, Claudia BeatrizTirado, Monica CeciliaComedi, David MarioCzaban, JosefThompson, DavidLaPierre, Ray R.NANOTECHNOLOGYGaAsNANOWIREDOPINGhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2GaAs nanowire (NW)-based p–n photovoltaic devices, with two distinct p and n spatial distributions and where Te was the n-dopant, have been studied by impedance spectroscopy in the 103–107 Hz frequency range and the − 1.5–1.5 V bias range. For a large n-core/p-shell overlap region within NWs in a coaxial geometry, the p–n junction properties (DC rectification and p–n depletion capacitance) are found to prevail. The impedance data at low bias for both NW devices show large frequency dispersions with relaxation frequencies that are compatible with carrier re-emission times from traps due to GaAs surface states. An increasing conductance with increasing frequency for low bias is observed, suggesting hopping transport through localized states. For large bias the conductance increases exponentially with bias and is frequency independent, indicating conduction through extended states in this regime.Fil: Caram, Jorge Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; ArgentinaFil: Sandoval Salinas, Claudia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán. Instituto de Investigación en Luz, Ambiente y Visión. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Instituto de Investigación en Luz, Ambiente y Visión; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; ArgentinaFil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; ArgentinaFil: Czaban, Josef. Mc Master University; CanadáFil: Thompson, David. Mc Master University; CanadáFil: LaPierre, Ray R.. Mc Master University; CanadáIOP Publishing2010-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/281036Caram, Jorge Pablo; Sandoval Salinas, Claudia Beatriz; Tirado, Monica Cecilia; Comedi, David Mario; Czaban, Josef; et al.; Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant; IOP Publishing; Nanotechnology; 21; 13; 4-2010; 1-80957-4484CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/0957-4484/21/13/134007info:eu-repo/semantics/altIdentifier/doi/10.1088/0957-4484/21/13/134007info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-02-26T10:03:33Zoai:ri.conicet.gov.ar:11336/281036instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-02-26 10:03:33.846CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
title Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
spellingShingle Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
Caram, Jorge Pablo
NANOTECHNOLOGY
GaAs
NANOWIRE
DOPING
title_short Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
title_full Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
title_fullStr Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
title_full_unstemmed Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
title_sort Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant
dc.creator.none.fl_str_mv Caram, Jorge Pablo
Sandoval Salinas, Claudia Beatriz
Tirado, Monica Cecilia
Comedi, David Mario
Czaban, Josef
Thompson, David
LaPierre, Ray R.
author Caram, Jorge Pablo
author_facet Caram, Jorge Pablo
Sandoval Salinas, Claudia Beatriz
Tirado, Monica Cecilia
Comedi, David Mario
Czaban, Josef
Thompson, David
LaPierre, Ray R.
author_role author
author2 Sandoval Salinas, Claudia Beatriz
Tirado, Monica Cecilia
Comedi, David Mario
Czaban, Josef
Thompson, David
LaPierre, Ray R.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv NANOTECHNOLOGY
GaAs
NANOWIRE
DOPING
topic NANOTECHNOLOGY
GaAs
NANOWIRE
DOPING
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv GaAs nanowire (NW)-based p–n photovoltaic devices, with two distinct p and n spatial distributions and where Te was the n-dopant, have been studied by impedance spectroscopy in the 103–107 Hz frequency range and the − 1.5–1.5 V bias range. For a large n-core/p-shell overlap region within NWs in a coaxial geometry, the p–n junction properties (DC rectification and p–n depletion capacitance) are found to prevail. The impedance data at low bias for both NW devices show large frequency dispersions with relaxation frequencies that are compatible with carrier re-emission times from traps due to GaAs surface states. An increasing conductance with increasing frequency for low bias is observed, suggesting hopping transport through localized states. For large bias the conductance increases exponentially with bias and is frequency independent, indicating conduction through extended states in this regime.
Fil: Caram, Jorge Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Sandoval Salinas, Claudia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán. Instituto de Investigación en Luz, Ambiente y Visión. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Instituto de Investigación en Luz, Ambiente y Visión; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina
Fil: Czaban, Josef. Mc Master University; Canadá
Fil: Thompson, David. Mc Master University; Canadá
Fil: LaPierre, Ray R.. Mc Master University; Canadá
description GaAs nanowire (NW)-based p–n photovoltaic devices, with two distinct p and n spatial distributions and where Te was the n-dopant, have been studied by impedance spectroscopy in the 103–107 Hz frequency range and the − 1.5–1.5 V bias range. For a large n-core/p-shell overlap region within NWs in a coaxial geometry, the p–n junction properties (DC rectification and p–n depletion capacitance) are found to prevail. The impedance data at low bias for both NW devices show large frequency dispersions with relaxation frequencies that are compatible with carrier re-emission times from traps due to GaAs surface states. An increasing conductance with increasing frequency for low bias is observed, suggesting hopping transport through localized states. For large bias the conductance increases exponentially with bias and is frequency independent, indicating conduction through extended states in this regime.
publishDate 2010
dc.date.none.fl_str_mv 2010-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/281036
Caram, Jorge Pablo; Sandoval Salinas, Claudia Beatriz; Tirado, Monica Cecilia; Comedi, David Mario; Czaban, Josef; et al.; Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant; IOP Publishing; Nanotechnology; 21; 13; 4-2010; 1-8
0957-4484
CONICET Digital
CONICET
url http://hdl.handle.net/11336/281036
identifier_str_mv Caram, Jorge Pablo; Sandoval Salinas, Claudia Beatriz; Tirado, Monica Cecilia; Comedi, David Mario; Czaban, Josef; et al.; Electrical characteristics of core–shell p–n GaAs nanowire structures with Te as the n-dopant; IOP Publishing; Nanotechnology; 21; 13; 4-2010; 1-8
0957-4484
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/0957-4484/21/13/134007
info:eu-repo/semantics/altIdentifier/doi/10.1088/0957-4484/21/13/134007
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.176822

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