Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

Autores
Palumbo, Félix Roberto Mario; Inbar, Moshe
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Inbar, Moshe. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
Reliability
InGaAs
high-K
Breakdown
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/32715
Acceder
id CONICETDig_3b3d8a016a12c06b6073e6ad6abfc71d
oai_identifier_str oai:ri.conicet.gov.ar:11336/32715
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Degradation characteristics of metal/Al2O3/n-InGaAs capacitorsPalumbo, Félix Roberto MarioInbar, MosheReliabilityInGaAshigh-KBreakdownhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Inbar, Moshe. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaAmerican Institute of Physics2014-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/32715Inbar, Moshe; Palumbo, Félix Roberto Mario; Degradation characteristics of metal/Al2O3/n-InGaAs capacitors; American Institute of Physics; Journal of Applied Physics; 115; 1-2014; 1-80021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4861033info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.4861033info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:02:30Zoai:ri.conicet.gov.ar:11336/32715instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:02:30.438CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
title Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
spellingShingle Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
Palumbo, Félix Roberto Mario
Reliability
InGaAs
high-K
Breakdown
title_short Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
title_full Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
title_fullStr Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
title_full_unstemmed Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
title_sort Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Inbar, Moshe
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Inbar, Moshe
author_role author
author2 Inbar, Moshe
author2_role author
dc.subject.none.fl_str_mv Reliability
InGaAs
high-K
Breakdown
topic Reliability
InGaAs
high-K
Breakdown
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Inbar, Moshe. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied for different pre-dielectric deposition treatments. The results show that the degradation, particularly under negative bias, is strongly affected by the oxide-semiconductor surface treatment of the samples. Two contributions (interface states and bulk traps) dominate depending on the stress conditions. Surface treatment with NH4OH shows a better quality of the interface in term of interface states; however, it contributes to generation of positive charge on the dielectric layer.
publishDate 2014
dc.date.none.fl_str_mv 2014-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/32715
Inbar, Moshe; Palumbo, Félix Roberto Mario; Degradation characteristics of metal/Al2O3/n-InGaAs capacitors; American Institute of Physics; Journal of Applied Physics; 115; 1-2014; 1-8
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/32715
identifier_str_mv Inbar, Moshe; Palumbo, Félix Roberto Mario; Degradation characteristics of metal/Al2O3/n-InGaAs capacitors; American Institute of Physics; Journal of Applied Physics; 115; 1-2014; 1-8
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4861033
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.4861033
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269759485247488
score 13.13397

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