Hf-based high-k dielectrics for p-Ge MOS gate stacks

Autores
Fadida, Sivan; Palumbo, Félix Roberto Mario; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.
Fil: Fadida, Sivan. Technion - Israel Institute of Technology; Israel
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Nyns, Laura. Imec; Bélgica
Fil: Lin, Dennis. Imec; Bélgica
Fil: Van Elshocht, Sven. Imec; Bélgica
Fil: Caymax, Matty. Imec; Bélgica
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
Materia
Ge
high-K
MOS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/26706
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/26706
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Hf-based high-k dielectrics for p-Ge MOS gate stacksFadida, SivanPalumbo, Félix Roberto MarioNyns, LauraLin, DennisVan Elshocht, SvenCaymax, MattyEizenberg, MosheGehigh-KMOShttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.Fil: Fadida, Sivan. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Nyns, Laura. Imec; BélgicaFil: Lin, Dennis. Imec; BélgicaFil: Van Elshocht, Sven. Imec; BélgicaFil: Caymax, Matty. Imec; BélgicaFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2013-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/26706Fadida, Sivan; Palumbo, Félix Roberto Mario; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; et al.; Hf-based high-k dielectrics for p-Ge MOS gate stacks; American Institute of Physics; Journal Of Vacuum Science & Technology B; 32; 12-2013; 1-70734-211XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1116/1.4837295info:eu-repo/semantics/altIdentifier/url/http://avs.scitation.org/doi/abs/10.1116/1.4837295info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-29T11:51:37Zoai:ri.conicet.gov.ar:11336/26706instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-29 11:51:38.055CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Hf-based high-k dielectrics for p-Ge MOS gate stacks
title Hf-based high-k dielectrics for p-Ge MOS gate stacks
spellingShingle Hf-based high-k dielectrics for p-Ge MOS gate stacks
Fadida, Sivan
Ge
high-K
MOS
title_short Hf-based high-k dielectrics for p-Ge MOS gate stacks
title_full Hf-based high-k dielectrics for p-Ge MOS gate stacks
title_fullStr Hf-based high-k dielectrics for p-Ge MOS gate stacks
title_full_unstemmed Hf-based high-k dielectrics for p-Ge MOS gate stacks
title_sort Hf-based high-k dielectrics for p-Ge MOS gate stacks
dc.creator.none.fl_str_mv Fadida, Sivan
Palumbo, Félix Roberto Mario
Nyns, Laura
Lin, Dennis
Van Elshocht, Sven
Caymax, Matty
Eizenberg, Moshe
author Fadida, Sivan
author_facet Fadida, Sivan
Palumbo, Félix Roberto Mario
Nyns, Laura
Lin, Dennis
Van Elshocht, Sven
Caymax, Matty
Eizenberg, Moshe
author_role author
author2 Palumbo, Félix Roberto Mario
Nyns, Laura
Lin, Dennis
Van Elshocht, Sven
Caymax, Matty
Eizenberg, Moshe
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Ge
high-K
MOS
topic Ge
high-K
MOS
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.
Fil: Fadida, Sivan. Technion - Israel Institute of Technology; Israel
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Nyns, Laura. Imec; Bélgica
Fil: Lin, Dennis. Imec; Bélgica
Fil: Van Elshocht, Sven. Imec; Bélgica
Fil: Caymax, Matty. Imec; Bélgica
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
description The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.
publishDate 2013
dc.date.none.fl_str_mv 2013-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/26706
Fadida, Sivan; Palumbo, Félix Roberto Mario; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; et al.; Hf-based high-k dielectrics for p-Ge MOS gate stacks; American Institute of Physics; Journal Of Vacuum Science & Technology B; 32; 12-2013; 1-7
0734-211X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/26706
identifier_str_mv Fadida, Sivan; Palumbo, Félix Roberto Mario; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; et al.; Hf-based high-k dielectrics for p-Ge MOS gate stacks; American Institute of Physics; Journal Of Vacuum Science & Technology B; 32; 12-2013; 1-7
0734-211X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1116/1.4837295
info:eu-repo/semantics/altIdentifier/url/http://avs.scitation.org/doi/abs/10.1116/1.4837295
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1847426582885433344
score 13.10058

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