Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

Autores
Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; Faigón, A.; Palumbo, Félix Roberto Mario; Campabadal, F.
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response.
Fil: Quinteros, C. P.. Comisión Nacional de Energía Atómica; Argentina
Fil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires; Argentina
Fil: Redin, Eduardo Gabriel. Universidad de Buenos Aires; Argentina
Fil: Rafí, J. M.. Consejo Superior de Investigaciones Científicas; España
Fil: Zabala, M.. Consejo Superior de Investigaciones Científicas; España
Fil: Faigón, A.. Universidad de Buenos Aires; Argentina
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Campabadal, F.. Consejo Superior de Investigaciones Científicas; España
Materia
HIGH-K GATE DIELECTRICS
MOS DEVICES
RADIATION EFFECTS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/199518
Acceder
id CONICETDig_339e7dc1d2beeb7219c60d06aeae2427
oai_identifier_str oai:ri.conicet.gov.ar:11336/199518
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p RadiationQuinteros, C. P.Sambuco Salomone, Lucas IgnacioRedin, Eduardo GabrielRafí, J. M.Zabala, M.Faigón, A.Palumbo, Félix Roberto MarioCampabadal, F.HIGH-K GATE DIELECTRICSMOS DEVICESRADIATION EFFECTShttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response.Fil: Quinteros, C. P.. Comisión Nacional de Energía Atómica; ArgentinaFil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires; ArgentinaFil: Redin, Eduardo Gabriel. Universidad de Buenos Aires; ArgentinaFil: Rafí, J. M.. Consejo Superior de Investigaciones Científicas; EspañaFil: Zabala, M.. Consejo Superior de Investigaciones Científicas; EspañaFil: Faigón, A.. Universidad de Buenos Aires; ArgentinaFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Campabadal, F.. Consejo Superior de Investigaciones Científicas; EspañaInstitute of Electrical and Electronics Engineers2012-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/199518Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; et al.; Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 59; 4 PART 1; 3-2012; 767-7720018-9499CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/6170909info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2012.2187217info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:11:31Zoai:ri.conicet.gov.ar:11336/199518instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:11:31.853CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
spellingShingle Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
Quinteros, C. P.
HIGH-K GATE DIELECTRICS
MOS DEVICES
RADIATION EFFECTS
title_short Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_full Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_fullStr Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_full_unstemmed Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
title_sort Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
dc.creator.none.fl_str_mv Quinteros, C. P.
Sambuco Salomone, Lucas Ignacio
Redin, Eduardo Gabriel
Rafí, J. M.
Zabala, M.
Faigón, A.
Palumbo, Félix Roberto Mario
Campabadal, F.
author Quinteros, C. P.
author_facet Quinteros, C. P.
Sambuco Salomone, Lucas Ignacio
Redin, Eduardo Gabriel
Rafí, J. M.
Zabala, M.
Faigón, A.
Palumbo, Félix Roberto Mario
Campabadal, F.
author_role author
author2 Sambuco Salomone, Lucas Ignacio
Redin, Eduardo Gabriel
Rafí, J. M.
Zabala, M.
Faigón, A.
Palumbo, Félix Roberto Mario
Campabadal, F.
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv HIGH-K GATE DIELECTRICS
MOS DEVICES
RADIATION EFFECTS
topic HIGH-K GATE DIELECTRICS
MOS DEVICES
RADIATION EFFECTS
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response.
Fil: Quinteros, C. P.. Comisión Nacional de Energía Atómica; Argentina
Fil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires; Argentina
Fil: Redin, Eduardo Gabriel. Universidad de Buenos Aires; Argentina
Fil: Rafí, J. M.. Consejo Superior de Investigaciones Científicas; España
Fil: Zabala, M.. Consejo Superior de Investigaciones Científicas; España
Fil: Faigón, A.. Universidad de Buenos Aires; Argentina
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Campabadal, F.. Consejo Superior de Investigaciones Científicas; España
description MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response.
publishDate 2012
dc.date.none.fl_str_mv 2012-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/199518
Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; et al.; Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 59; 4 PART 1; 3-2012; 767-772
0018-9499
CONICET Digital
CONICET
url http://hdl.handle.net/11336/199518
identifier_str_mv Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; et al.; Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 59; 4 PART 1; 3-2012; 767-772
0018-9499
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/6170909
info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2012.2187217
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842980591841050624
score 12.993085

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