Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance

Autores
Boyeras Baldomá, Santiago; Pazos, Sebastián Matías; Aguirre, F. L.; Palumbo, Felix Roberto Mario
Año de publicación
2020
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown model. Using two distinct measurement setups on four different sets of samples, featuring two layers and three layers of Al 2 O 3 and HfO 2 interspersed, the breakdown transients were captured and characterized in terms of the degradation rate. Experimental results show that the number of oxide-oxide interfaces present in the multilayered stack has no visible impact on the breakdown growth rate among our samples. This strongly supports the interpretation of the bulk materials dominating the heat transfer to the surroundings of a fully formed conductive filament that shows no electrical differences between our various multilayered stack configurations.
Fil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Aguirre, F. L.. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
RELIABILITY
MULTILAYERED
OXIDE
MOS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/169068
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistanceBoyeras Baldomá, SantiagoPazos, Sebastián MatíasAguirre, F. L.Palumbo, Felix Roberto MarioRELIABILITYMULTILAYEREDOXIDEMOShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown model. Using two distinct measurement setups on four different sets of samples, featuring two layers and three layers of Al 2 O 3 and HfO 2 interspersed, the breakdown transients were captured and characterized in terms of the degradation rate. Experimental results show that the number of oxide-oxide interfaces present in the multilayered stack has no visible impact on the breakdown growth rate among our samples. This strongly supports the interpretation of the bulk materials dominating the heat transfer to the surroundings of a fully formed conductive filament that shows no electrical differences between our various multilayered stack configurations.Fil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Aguirre, F. L.. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaAmerican Institute of Physics2020-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/169068Boyeras Baldomá, Santiago; Pazos, Sebastián Matías; Aguirre, F. L.; Palumbo, Felix Roberto Mario; Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance; American Institute of Physics; Journal of Applied Physics; 128; 3; 7-2020; 1-90021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/5.0012918info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0012918info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:49:51Zoai:ri.conicet.gov.ar:11336/169068instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:49:51.307CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
title Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
spellingShingle Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
Boyeras Baldomá, Santiago
RELIABILITY
MULTILAYERED
OXIDE
MOS
title_short Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
title_full Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
title_fullStr Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
title_full_unstemmed Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
title_sort Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
dc.creator.none.fl_str_mv Boyeras Baldomá, Santiago
Pazos, Sebastián Matías
Aguirre, F. L.
Palumbo, Felix Roberto Mario
author Boyeras Baldomá, Santiago
author_facet Boyeras Baldomá, Santiago
Pazos, Sebastián Matías
Aguirre, F. L.
Palumbo, Felix Roberto Mario
author_role author
author2 Pazos, Sebastián Matías
Aguirre, F. L.
Palumbo, Felix Roberto Mario
author2_role author
author
author
dc.subject.none.fl_str_mv RELIABILITY
MULTILAYERED
OXIDE
MOS
topic RELIABILITY
MULTILAYERED
OXIDE
MOS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown model. Using two distinct measurement setups on four different sets of samples, featuring two layers and three layers of Al 2 O 3 and HfO 2 interspersed, the breakdown transients were captured and characterized in terms of the degradation rate. Experimental results show that the number of oxide-oxide interfaces present in the multilayered stack has no visible impact on the breakdown growth rate among our samples. This strongly supports the interpretation of the bulk materials dominating the heat transfer to the surroundings of a fully formed conductive filament that shows no electrical differences between our various multilayered stack configurations.
Fil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Aguirre, F. L.. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown model. Using two distinct measurement setups on four different sets of samples, featuring two layers and three layers of Al 2 O 3 and HfO 2 interspersed, the breakdown transients were captured and characterized in terms of the degradation rate. Experimental results show that the number of oxide-oxide interfaces present in the multilayered stack has no visible impact on the breakdown growth rate among our samples. This strongly supports the interpretation of the bulk materials dominating the heat transfer to the surroundings of a fully formed conductive filament that shows no electrical differences between our various multilayered stack configurations.
publishDate 2020
dc.date.none.fl_str_mv 2020-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/169068
Boyeras Baldomá, Santiago; Pazos, Sebastián Matías; Aguirre, F. L.; Palumbo, Felix Roberto Mario; Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance; American Institute of Physics; Journal of Applied Physics; 128; 3; 7-2020; 1-9
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/169068
identifier_str_mv Boyeras Baldomá, Santiago; Pazos, Sebastián Matías; Aguirre, F. L.; Palumbo, Felix Roberto Mario; Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance; American Institute of Physics; Journal of Applied Physics; 128; 3; 7-2020; 1-9
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/5.0012918
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0012918
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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