Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Autores
Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Palumbo, Félix Roberto Mario; Fadida, S.; Winter, R.; Eizenberg, M.
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The influence of forming gas annealing on the degradation at a constant stress voltage of multi-layered germanium-based Metal-Oxide-Semiconductor capacitors (p-Ge/GeOx/Al2O3/High-K/Metal Gate) has been analyzed in terms of the C-V hysteresis and flat band voltage as a function of both negative and positive stress fields. Significant differences were found for the case of negative voltage stress between the annealed and non-annealed samples, independently of the stressing time. It was found that the hole trapping effect decreases in the case of the forming gas annealed samples, indicating strong passivation of defects with energies close to the valence band existing in the oxide-semiconductor interface during the forming gas annealing. Finally, a comparison between the degradation dynamics of Germanium and III-V (n-InGaAs) MOS stacks is presented to summarize the main challenges in the integration of reliable Ge–III-V hybrid devices.
Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Fadida, S.. Technion - Israel Institute of Technology; Israel
Fil: Winter, R.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
Materia
DIELECTRICOS
Ge
HIGH-K
MOS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/93779
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/93779
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Effect of forming gas annealing on the degradation properties of Ge-based MOS stacksAguirre, Fernando LeonelPazos, Sebastián MatíasPalumbo, Félix Roberto MarioFadida, S.Winter, R.Eizenberg, M.DIELECTRICOSGeHIGH-KMOShttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2https://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The influence of forming gas annealing on the degradation at a constant stress voltage of multi-layered germanium-based Metal-Oxide-Semiconductor capacitors (p-Ge/GeOx/Al2O3/High-K/Metal Gate) has been analyzed in terms of the C-V hysteresis and flat band voltage as a function of both negative and positive stress fields. Significant differences were found for the case of negative voltage stress between the annealed and non-annealed samples, independently of the stressing time. It was found that the hole trapping effect decreases in the case of the forming gas annealed samples, indicating strong passivation of defects with energies close to the valence band existing in the oxide-semiconductor interface during the forming gas annealing. Finally, a comparison between the degradation dynamics of Germanium and III-V (n-InGaAs) MOS stacks is presented to summarize the main challenges in the integration of reliable Ge–III-V hybrid devices.Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Fadida, S.. Technion - Israel Institute of Technology; IsraelFil: Winter, R.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2018-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/93779Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Palumbo, Félix Roberto Mario; Fadida, S.; Winter, R.; et al.; Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks; American Institute of Physics; Journal of Applied Physics; 123; 13; 4-2018; 1-360021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.5018193info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5018193info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T12:59:47Zoai:ri.conicet.gov.ar:11336/93779instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 12:59:47.571CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
title Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
spellingShingle Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
Aguirre, Fernando Leonel
DIELECTRICOS
Ge
HIGH-K
MOS
title_short Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
title_full Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
title_fullStr Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
title_full_unstemmed Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
title_sort Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks
dc.creator.none.fl_str_mv Aguirre, Fernando Leonel
Pazos, Sebastián Matías
Palumbo, Félix Roberto Mario
Fadida, S.
Winter, R.
Eizenberg, M.
author Aguirre, Fernando Leonel
author_facet Aguirre, Fernando Leonel
Pazos, Sebastián Matías
Palumbo, Félix Roberto Mario
Fadida, S.
Winter, R.
Eizenberg, M.
author_role author
author2 Pazos, Sebastián Matías
Palumbo, Félix Roberto Mario
Fadida, S.
Winter, R.
Eizenberg, M.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv DIELECTRICOS
Ge
HIGH-K
MOS
topic DIELECTRICOS
Ge
HIGH-K
MOS
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The influence of forming gas annealing on the degradation at a constant stress voltage of multi-layered germanium-based Metal-Oxide-Semiconductor capacitors (p-Ge/GeOx/Al2O3/High-K/Metal Gate) has been analyzed in terms of the C-V hysteresis and flat band voltage as a function of both negative and positive stress fields. Significant differences were found for the case of negative voltage stress between the annealed and non-annealed samples, independently of the stressing time. It was found that the hole trapping effect decreases in the case of the forming gas annealed samples, indicating strong passivation of defects with energies close to the valence band existing in the oxide-semiconductor interface during the forming gas annealing. Finally, a comparison between the degradation dynamics of Germanium and III-V (n-InGaAs) MOS stacks is presented to summarize the main challenges in the integration of reliable Ge–III-V hybrid devices.
Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Fadida, S.. Technion - Israel Institute of Technology; Israel
Fil: Winter, R.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
description The influence of forming gas annealing on the degradation at a constant stress voltage of multi-layered germanium-based Metal-Oxide-Semiconductor capacitors (p-Ge/GeOx/Al2O3/High-K/Metal Gate) has been analyzed in terms of the C-V hysteresis and flat band voltage as a function of both negative and positive stress fields. Significant differences were found for the case of negative voltage stress between the annealed and non-annealed samples, independently of the stressing time. It was found that the hole trapping effect decreases in the case of the forming gas annealed samples, indicating strong passivation of defects with energies close to the valence band existing in the oxide-semiconductor interface during the forming gas annealing. Finally, a comparison between the degradation dynamics of Germanium and III-V (n-InGaAs) MOS stacks is presented to summarize the main challenges in the integration of reliable Ge–III-V hybrid devices.
publishDate 2018
dc.date.none.fl_str_mv 2018-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/93779
Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Palumbo, Félix Roberto Mario; Fadida, S.; Winter, R.; et al.; Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks; American Institute of Physics; Journal of Applied Physics; 123; 13; 4-2018; 1-36
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/93779
identifier_str_mv Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Palumbo, Félix Roberto Mario; Fadida, S.; Winter, R.; et al.; Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks; American Institute of Physics; Journal of Applied Physics; 123; 13; 4-2018; 1-36
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.5018193
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5018193
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842979837190340608
score 12.993085

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