Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks

Autores
Palumbo, Félix Roberto Mario; Winter, R.; Krylov, I.; Eizenberg, M.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the characterization of the various defects that affect the performance and reliability. Understanding the generation of defects by constant voltage stresses is crucial in terms of their concentration profiles and energy levels. In particular, we want to understand the real nature of the defects responsible for the dispersion of C-V in strong accumulation. Here, we show that the degradation under positive bias of metal/Al2O3/n-InGaAs capacitors reveals two contributions depending on the temperature that affects the C-V curves in a different way. Based on features of stressed C-V curves, it is possible to estimate the onset point of the distribution of border traps near the midgap condition. The results suggest that these defects are strongly related to the characteristics of the InGaAs substrate.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Winter, R.. Technion - Israel Institute of Technology; Israel
Fil: Krylov, I.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
Materia
Interface states
III-V
MOS
High-k dielectrics
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/35768
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/35768
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacksPalumbo, Félix Roberto MarioWinter, R.Krylov, I.Eizenberg, M.Interface statesIII-VMOSHigh-k dielectricshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the characterization of the various defects that affect the performance and reliability. Understanding the generation of defects by constant voltage stresses is crucial in terms of their concentration profiles and energy levels. In particular, we want to understand the real nature of the defects responsible for the dispersion of C-V in strong accumulation. Here, we show that the degradation under positive bias of metal/Al2O3/n-InGaAs capacitors reveals two contributions depending on the temperature that affects the C-V curves in a different way. Based on features of stressed C-V curves, it is possible to estimate the onset point of the distribution of border traps near the midgap condition. The results suggest that these defects are strongly related to the characteristics of the InGaAs substrate.Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Winter, R.. Technion - Israel Institute of Technology; IsraelFil: Krylov, I.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2014-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/35768Palumbo, Félix Roberto Mario; Winter, R.; Krylov, I.; Eizenberg, M.; Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 104; 6-2014; 1-40003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4885535info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.4885535info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:45:56Zoai:ri.conicet.gov.ar:11336/35768instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:45:56.979CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
title Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
spellingShingle Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
Palumbo, Félix Roberto Mario
Interface states
III-V
MOS
High-k dielectrics
title_short Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
title_full Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
title_fullStr Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
title_full_unstemmed Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
title_sort Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Winter, R.
Krylov, I.
Eizenberg, M.
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Winter, R.
Krylov, I.
Eizenberg, M.
author_role author
author2 Winter, R.
Krylov, I.
Eizenberg, M.
author2_role author
author
author
dc.subject.none.fl_str_mv Interface states
III-V
MOS
High-k dielectrics
topic Interface states
III-V
MOS
High-k dielectrics
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the characterization of the various defects that affect the performance and reliability. Understanding the generation of defects by constant voltage stresses is crucial in terms of their concentration profiles and energy levels. In particular, we want to understand the real nature of the defects responsible for the dispersion of C-V in strong accumulation. Here, we show that the degradation under positive bias of metal/Al2O3/n-InGaAs capacitors reveals two contributions depending on the temperature that affects the C-V curves in a different way. Based on features of stressed C-V curves, it is possible to estimate the onset point of the distribution of border traps near the midgap condition. The results suggest that these defects are strongly related to the characteristics of the InGaAs substrate.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Winter, R.. Technion - Israel Institute of Technology; Israel
Fil: Krylov, I.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
description The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the characterization of the various defects that affect the performance and reliability. Understanding the generation of defects by constant voltage stresses is crucial in terms of their concentration profiles and energy levels. In particular, we want to understand the real nature of the defects responsible for the dispersion of C-V in strong accumulation. Here, we show that the degradation under positive bias of metal/Al2O3/n-InGaAs capacitors reveals two contributions depending on the temperature that affects the C-V curves in a different way. Based on features of stressed C-V curves, it is possible to estimate the onset point of the distribution of border traps near the midgap condition. The results suggest that these defects are strongly related to the characteristics of the InGaAs substrate.
publishDate 2014
dc.date.none.fl_str_mv 2014-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/35768
Palumbo, Félix Roberto Mario; Winter, R.; Krylov, I.; Eizenberg, M.; Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 104; 6-2014; 1-4
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/35768
identifier_str_mv Palumbo, Félix Roberto Mario; Winter, R.; Krylov, I.; Eizenberg, M.; Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 104; 6-2014; 1-4
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4885535
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.4885535
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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