Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Autores
Palumbo, Félix Roberto Mario; Lombardo,Salvatore; Eizenberg, Moshe
Año de publicación
2016
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina
Fil: Lombardo,Salvatore. Consiglio Nazionale delle Ricerche; Italia
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
Materia
Oxide Breakdown
Progressive Breakdown
High-K Dielectrics
Iii?V Mos Devices
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/42554
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacksPalumbo, Félix Roberto MarioLombardo,SalvatoreEizenberg, MosheOxide BreakdownProgressive BreakdownHigh-K DielectricsIii?V Mos Deviceshttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; ArgentinaFil: Lombardo,Salvatore. Consiglio Nazionale delle Ricerche; ItaliaFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; IsraelPergamon-Elsevier Science Ltd2016-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/42554Palumbo, Félix Roberto Mario; Lombardo,Salvatore; Eizenberg, Moshe; Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks; Pergamon-Elsevier Science Ltd; Microelectronics Reliability; 56; 1-2016; 22-280026-2714CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2015.10.009info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0026271415301955info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:08:05Zoai:ri.conicet.gov.ar:11336/42554instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:08:05.399CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
title Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
spellingShingle Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
Palumbo, Félix Roberto Mario
Oxide Breakdown
Progressive Breakdown
High-K Dielectrics
Iii?V Mos Devices
title_short Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
title_full Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
title_fullStr Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
title_full_unstemmed Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
title_sort Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Lombardo,Salvatore
Eizenberg, Moshe
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Lombardo,Salvatore
Eizenberg, Moshe
author_role author
author2 Lombardo,Salvatore
Eizenberg, Moshe
author2_role author
author
dc.subject.none.fl_str_mv Oxide Breakdown
Progressive Breakdown
High-K Dielectrics
Iii?V Mos Devices
topic Oxide Breakdown
Progressive Breakdown
High-K Dielectrics
Iii?V Mos Devices
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina
Fil: Lombardo,Salvatore. Consiglio Nazionale delle Ricerche; Italia
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
description In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.
publishDate 2016
dc.date.none.fl_str_mv 2016-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/42554
Palumbo, Félix Roberto Mario; Lombardo,Salvatore; Eizenberg, Moshe; Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks; Pergamon-Elsevier Science Ltd; Microelectronics Reliability; 56; 1-2016; 22-28
0026-2714
CONICET Digital
CONICET
url http://hdl.handle.net/11336/42554
identifier_str_mv Palumbo, Félix Roberto Mario; Lombardo,Salvatore; Eizenberg, Moshe; Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks; Pergamon-Elsevier Science Ltd; Microelectronics Reliability; 56; 1-2016; 22-28
0026-2714
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2015.10.009
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0026271415301955
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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