Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

Autores
Tang, Kechao; Palumbo, Félix Roberto Mario; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C.
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.
Fil: Tang, Kechao. University of Stanford; Estados Unidos
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Tecnológica Nacional; Argentina
Fil: Zhang, Liangliang. University of Stanford; Estados Unidos
Fil: Droopad, Ravi. University of Texas; Estados Unidos
Fil: McIntyre, Paul C.. University of Stanford; Estados Unidos
Materia
Al2o3
Border Traps
Hydrogen Depassivation
Ingaas
Interface Traps
Moscap
Reliability
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/40847
Acceder
id CONICETDig_95619c04c24e4278f3c88f3d66bbcf66
oai_identifier_str oai:ri.conicet.gov.ar:11336/40847
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate StacksTang, KechaoPalumbo, Félix Roberto MarioZhang, LiangliangDroopad, RaviMcIntyre, Paul C.Al2o3Border TrapsHydrogen DepassivationIngaasInterface TrapsMoscapReliabilityhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.Fil: Tang, Kechao. University of Stanford; Estados UnidosFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Tecnológica Nacional; ArgentinaFil: Zhang, Liangliang. University of Stanford; Estados UnidosFil: Droopad, Ravi. University of Texas; Estados UnidosFil: McIntyre, Paul C.. University of Stanford; Estados UnidosAmerican Chemical Society2017-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/40847Tang, Kechao; Palumbo, Félix Roberto Mario; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C.; Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks; American Chemical Society; Acs Applied Materials & Interfaces; 9; 8; 3-2017; 7819-78251944-8244CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1021/acsami.6b16232info:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/10.1021/acsami.6b16232info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:53:02Zoai:ri.conicet.gov.ar:11336/40847instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:53:02.992CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
title Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
spellingShingle Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
Tang, Kechao
Al2o3
Border Traps
Hydrogen Depassivation
Ingaas
Interface Traps
Moscap
Reliability
title_short Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
title_full Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
title_fullStr Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
title_full_unstemmed Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
title_sort Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
dc.creator.none.fl_str_mv Tang, Kechao
Palumbo, Félix Roberto Mario
Zhang, Liangliang
Droopad, Ravi
McIntyre, Paul C.
author Tang, Kechao
author_facet Tang, Kechao
Palumbo, Félix Roberto Mario
Zhang, Liangliang
Droopad, Ravi
McIntyre, Paul C.
author_role author
author2 Palumbo, Félix Roberto Mario
Zhang, Liangliang
Droopad, Ravi
McIntyre, Paul C.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Al2o3
Border Traps
Hydrogen Depassivation
Ingaas
Interface Traps
Moscap
Reliability
topic Al2o3
Border Traps
Hydrogen Depassivation
Ingaas
Interface Traps
Moscap
Reliability
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.
Fil: Tang, Kechao. University of Stanford; Estados Unidos
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Tecnológica Nacional; Argentina
Fil: Zhang, Liangliang. University of Stanford; Estados Unidos
Fil: Droopad, Ravi. University of Texas; Estados Unidos
Fil: McIntyre, Paul C.. University of Stanford; Estados Unidos
description We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.
publishDate 2017
dc.date.none.fl_str_mv 2017-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/40847
Tang, Kechao; Palumbo, Félix Roberto Mario; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C.; Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks; American Chemical Society; Acs Applied Materials & Interfaces; 9; 8; 3-2017; 7819-7825
1944-8244
CONICET Digital
CONICET
url http://hdl.handle.net/11336/40847
identifier_str_mv Tang, Kechao; Palumbo, Félix Roberto Mario; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C.; Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks; American Chemical Society; Acs Applied Materials & Interfaces; 9; 8; 3-2017; 7819-7825
1944-8244
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1021/acsami.6b16232
info:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/10.1021/acsami.6b16232
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269197206290432
score 13.13397

Publicaciones similares