High resolution X-Ray diffraction analysis of InGaAs/InP superlattices
- Autores
- Cornet, D. M.; LaPierre, R. R; Pusep, Yu A.; Comedi, David Mario
- Año de publicación
- 2006
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the structural properties of the SLs. The HRXRD curves exhibited a number of features indicative of interfacial layers, including weak even-order satellite peaks, and a zero-order diffraction peak that shifted toward lower diffraction angles with decreasing SL period. A detailed structural model is proposed to explain these observations, consisting of strained InAsP and InGaAsP monolayers due to the group-V gas switching and atomic exchange at the SL interfaces.
Fil: Cornet, D. M.. Mc Master University; Canadá
Fil: LaPierre, R. R. Mc Master University; Canadá
Fil: Pusep, Yu A.. Universidade de São Paulo; Brasil
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina - Materia
-
InGaAs/InP
superlattice
X-ray diffraction
InGaAsP - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/85672
Ver los metadatos del registro completo
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High resolution X-Ray diffraction analysis of InGaAs/InP superlatticesCornet, D. M.LaPierre, R. RPusep, Yu A.Comedi, David MarioInGaAs/InPsuperlatticeX-ray diffractionInGaAsPhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the structural properties of the SLs. The HRXRD curves exhibited a number of features indicative of interfacial layers, including weak even-order satellite peaks, and a zero-order diffraction peak that shifted toward lower diffraction angles with decreasing SL period. A detailed structural model is proposed to explain these observations, consisting of strained InAsP and InGaAsP monolayers due to the group-V gas switching and atomic exchange at the SL interfaces.Fil: Cornet, D. M.. Mc Master University; CanadáFil: LaPierre, R. R. Mc Master University; CanadáFil: Pusep, Yu A.. Universidade de São Paulo; BrasilFil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaAmerican Institute of Physics2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85672Cornet, D. M.; LaPierre, R. R; Pusep, Yu A.; Comedi, David Mario; High resolution X-Ray diffraction analysis of InGaAs/InP superlattices; American Institute of Physics; Journal of Applied Physics; 100; 12-2006; 1-60021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.2335689info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.2335689info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-11-12T09:57:34Zoai:ri.conicet.gov.ar:11336/85672instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-11-12 09:57:35.03CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| title |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| spellingShingle |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices Cornet, D. M. InGaAs/InP superlattice X-ray diffraction InGaAsP |
| title_short |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| title_full |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| title_fullStr |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| title_full_unstemmed |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| title_sort |
High resolution X-Ray diffraction analysis of InGaAs/InP superlattices |
| dc.creator.none.fl_str_mv |
Cornet, D. M. LaPierre, R. R Pusep, Yu A. Comedi, David Mario |
| author |
Cornet, D. M. |
| author_facet |
Cornet, D. M. LaPierre, R. R Pusep, Yu A. Comedi, David Mario |
| author_role |
author |
| author2 |
LaPierre, R. R Pusep, Yu A. Comedi, David Mario |
| author2_role |
author author author |
| dc.subject.none.fl_str_mv |
InGaAs/InP superlattice X-ray diffraction InGaAsP |
| topic |
InGaAs/InP superlattice X-ray diffraction InGaAsP |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| dc.description.none.fl_txt_mv |
The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the structural properties of the SLs. The HRXRD curves exhibited a number of features indicative of interfacial layers, including weak even-order satellite peaks, and a zero-order diffraction peak that shifted toward lower diffraction angles with decreasing SL period. A detailed structural model is proposed to explain these observations, consisting of strained InAsP and InGaAsP monolayers due to the group-V gas switching and atomic exchange at the SL interfaces. Fil: Cornet, D. M.. Mc Master University; Canadá Fil: LaPierre, R. R. Mc Master University; Canadá Fil: Pusep, Yu A.. Universidade de São Paulo; Brasil Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina |
| description |
The interfacial properties of lattice-matched InGaAs/InP superlattice (SL) structures grown by gas source molecular beam epitaxy were investigated by high resolution x-ray diffraction (HRXRD). SLs with various periods were grown to determine the contributions of the interface layers to the structural properties of the SLs. The HRXRD curves exhibited a number of features indicative of interfacial layers, including weak even-order satellite peaks, and a zero-order diffraction peak that shifted toward lower diffraction angles with decreasing SL period. A detailed structural model is proposed to explain these observations, consisting of strained InAsP and InGaAsP monolayers due to the group-V gas switching and atomic exchange at the SL interfaces. |
| publishDate |
2006 |
| dc.date.none.fl_str_mv |
2006-12 |
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info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
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article |
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publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/85672 Cornet, D. M.; LaPierre, R. R; Pusep, Yu A.; Comedi, David Mario; High resolution X-Ray diffraction analysis of InGaAs/InP superlattices; American Institute of Physics; Journal of Applied Physics; 100; 12-2006; 1-6 0021-8979 CONICET Digital CONICET |
| url |
http://hdl.handle.net/11336/85672 |
| identifier_str_mv |
Cornet, D. M.; LaPierre, R. R; Pusep, Yu A.; Comedi, David Mario; High resolution X-Ray diffraction analysis of InGaAs/InP superlattices; American Institute of Physics; Journal of Applied Physics; 100; 12-2006; 1-6 0021-8979 CONICET Digital CONICET |
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eng |
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eng |
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info:eu-repo/semantics/altIdentifier/doi/10.1063/1.2335689 info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.2335689 |
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info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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American Institute of Physics |
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American Institute of Physics |
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dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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