Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

Autores
Palumbo, Félix Roberto Mario; Shekhter, P.; Eizenberg, M.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
Materia
Ingaas
Resistive Switching
Interface States
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/32762
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/32762
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAsPalumbo, Félix Roberto MarioShekhter, P.Eizenberg, M.IngaasResistive SwitchingInterface Stateshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Shekhter, P.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelElsevier2014-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/32762Eizenberg, M.; Shekhter, P.; Palumbo, Félix Roberto Mario; Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs; Elsevier; Solid-state Electronics; 93; 1-2014; 56-600038-1101CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2013.12.011info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110113003699info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:06:26Zoai:ri.conicet.gov.ar:11336/32762instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:06:27.262CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
title Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
spellingShingle Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
Palumbo, Félix Roberto Mario
Ingaas
Resistive Switching
Interface States
title_short Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
title_full Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
title_fullStr Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
title_full_unstemmed Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
title_sort Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Shekhter, P.
Eizenberg, M.
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Shekhter, P.
Eizenberg, M.
author_role author
author2 Shekhter, P.
Eizenberg, M.
author2_role author
author
dc.subject.none.fl_str_mv Ingaas
Resistive Switching
Interface States
topic Ingaas
Resistive Switching
Interface States
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
description In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
publishDate 2014
dc.date.none.fl_str_mv 2014-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/32762
Eizenberg, M.; Shekhter, P.; Palumbo, Félix Roberto Mario; Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs; Elsevier; Solid-state Electronics; 93; 1-2014; 56-60
0038-1101
CONICET Digital
CONICET
url http://hdl.handle.net/11336/32762
identifier_str_mv Eizenberg, M.; Shekhter, P.; Palumbo, Félix Roberto Mario; Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs; Elsevier; Solid-state Electronics; 93; 1-2014; 56-60
0038-1101
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2013.12.011
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110113003699
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.004268

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