Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

Autores
Palumbo, Félix Roberto Mario; Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Krylov, Igor; Winter, Roy; Eizenberg, Moshe
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina
Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Krylov, Igor. Technion - Israel Institute of Technology; Israel
Fil: Winter, Roy. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
Materia
III-V
Reliability
HK
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/98260
Acceder
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network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAsPalumbo, Félix Roberto MarioAguirre, Fernando LeonelPazos, Sebastián MatíasKrylov, IgorWinter, RoyEizenberg, MosheIII-VReliabilityHKhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; ArgentinaFil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Krylov, Igor. Technion - Israel Institute of Technology; IsraelFil: Winter, Roy. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; IsraelPergamon-Elsevier Science Ltd2018-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/98260Palumbo, Félix Roberto Mario; Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Krylov, Igor; Winter, Roy; et al.; Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 149; 11-2018; 71-770038-1101CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110117309231info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2018.07.006info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:07:49Zoai:ri.conicet.gov.ar:11336/98260instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:07:49.946CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
title Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
spellingShingle Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
Palumbo, Félix Roberto Mario
III-V
Reliability
HK
title_short Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
title_full Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
title_fullStr Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
title_full_unstemmed Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
title_sort Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Aguirre, Fernando Leonel
Pazos, Sebastián Matías
Krylov, Igor
Winter, Roy
Eizenberg, Moshe
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Aguirre, Fernando Leonel
Pazos, Sebastián Matías
Krylov, Igor
Winter, Roy
Eizenberg, Moshe
author_role author
author2 Aguirre, Fernando Leonel
Pazos, Sebastián Matías
Krylov, Igor
Winter, Roy
Eizenberg, Moshe
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv III-V
Reliability
HK
topic III-V
Reliability
HK
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina
Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Krylov, Igor. Technion - Israel Institute of Technology; Israel
Fil: Winter, Roy. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
description In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.
publishDate 2018
dc.date.none.fl_str_mv 2018-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/98260
Palumbo, Félix Roberto Mario; Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Krylov, Igor; Winter, Roy; et al.; Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 149; 11-2018; 71-77
0038-1101
CONICET Digital
CONICET
url http://hdl.handle.net/11336/98260
identifier_str_mv Palumbo, Félix Roberto Mario; Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Krylov, Igor; Winter, Roy; et al.; Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 149; 11-2018; 71-77
0038-1101
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110117309231
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2018.07.006
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842270019561455616
score 13.13397

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