Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

Autores
Palumbo, Félix Roberto Mario; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
Materia
III-V MOS STACKS
XPS
BREAKDOWN EFFECTS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/42173
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/42173
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacksPalumbo, Félix Roberto MarioShekhter, P.Cohen Weinfeld, K.Eizenberg, M.III-V MOS STACKSXPSBREAKDOWN EFFECTShttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Shekhter, P.. Technion - Israel Institute of Technology; IsraelFil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2015-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/42173Palumbo, Félix Roberto Mario; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.; Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 107; 12; 9-2015; 1-4; 1229010003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4931496info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4931496info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:01:26Zoai:ri.conicet.gov.ar:11336/42173instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:01:26.335CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
title Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
spellingShingle Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
Palumbo, Félix Roberto Mario
III-V MOS STACKS
XPS
BREAKDOWN EFFECTS
title_short Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
title_full Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
title_fullStr Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
title_full_unstemmed Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
title_sort Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Shekhter, P.
Cohen Weinfeld, K.
Eizenberg, M.
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Shekhter, P.
Cohen Weinfeld, K.
Eizenberg, M.
author_role author
author2 Shekhter, P.
Cohen Weinfeld, K.
Eizenberg, M.
author2_role author
author
author
dc.subject.none.fl_str_mv III-V MOS STACKS
XPS
BREAKDOWN EFFECTS
topic III-V MOS STACKS
XPS
BREAKDOWN EFFECTS
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
description In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
publishDate 2015
dc.date.none.fl_str_mv 2015-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/42173
Palumbo, Félix Roberto Mario; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.; Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 107; 12; 9-2015; 1-4; 122901
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/42173
identifier_str_mv Palumbo, Félix Roberto Mario; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.; Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 107; 12; 9-2015; 1-4; 122901
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4931496
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4931496
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269693877944320
score 13.13397

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