Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Autores
Krylov, Igor; Xu, Xianbin; Zoubenko, Ekaterina; Weinfeld, Kamira; Boyeras Baldomá, Santiago; Palumbo, Félix Roberto Mario; Eizenberg, Moshe; Ritter, Dan
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.
Fil: Krylov, Igor. Technion - Israel Institute of Technology; Israel
Fil: Xu, Xianbin. Technion - Israel Institute of Technology; Israel
Fil: Zoubenko, Ekaterina. Technion - Israel Institute of Technology; Israel
Fil: Weinfeld, Kamira. Technion - Israel Institute of Technology; Israel
Fil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional; Argentina
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
Fil: Ritter, Dan. Technion - Israel Institute of Technology; Israel
Materia
Reliability
HK
ALD
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/98357
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/98357
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer depositionKrylov, IgorXu, XianbinZoubenko, EkaterinaWeinfeld, KamiraBoyeras Baldomá, SantiagoPalumbo, Félix Roberto MarioEizenberg, MosheRitter, DanReliabilityHKALDhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.Fil: Krylov, Igor. Technion - Israel Institute of Technology; IsraelFil: Xu, Xianbin. Technion - Israel Institute of Technology; IsraelFil: Zoubenko, Ekaterina. Technion - Israel Institute of Technology; IsraelFil: Weinfeld, Kamira. Technion - Israel Institute of Technology; IsraelFil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional; ArgentinaFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; ArgentinaFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; IsraelFil: Ritter, Dan. Technion - Israel Institute of Technology; IsraelA V S Amer Inst Physics2018-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/98357Krylov, Igor; Xu, Xianbin; Zoubenko, Ekaterina; Weinfeld, Kamira; Boyeras Baldomá, Santiago; et al.; Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition; A V S Amer Inst Physics; Journal Of Vacuum Science & Technology A - Vacuum Surfaces And Films; 36; 6; 11-2018; 1-100734-2101CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1116/1.5057761info:eu-repo/semantics/altIdentifier/url/https://avs.scitation.org/doi/10.1116/1.5057761info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:03:04Zoai:ri.conicet.gov.ar:11336/98357instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:03:05.341CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
title Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
spellingShingle Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
Krylov, Igor
Reliability
HK
ALD
title_short Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
title_full Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
title_fullStr Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
title_full_unstemmed Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
title_sort Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
dc.creator.none.fl_str_mv Krylov, Igor
Xu, Xianbin
Zoubenko, Ekaterina
Weinfeld, Kamira
Boyeras Baldomá, Santiago
Palumbo, Félix Roberto Mario
Eizenberg, Moshe
Ritter, Dan
author Krylov, Igor
author_facet Krylov, Igor
Xu, Xianbin
Zoubenko, Ekaterina
Weinfeld, Kamira
Boyeras Baldomá, Santiago
Palumbo, Félix Roberto Mario
Eizenberg, Moshe
Ritter, Dan
author_role author
author2 Xu, Xianbin
Zoubenko, Ekaterina
Weinfeld, Kamira
Boyeras Baldomá, Santiago
Palumbo, Félix Roberto Mario
Eizenberg, Moshe
Ritter, Dan
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Reliability
HK
ALD
topic Reliability
HK
ALD
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.
Fil: Krylov, Igor. Technion - Israel Institute of Technology; Israel
Fil: Xu, Xianbin. Technion - Israel Institute of Technology; Israel
Fil: Zoubenko, Ekaterina. Technion - Israel Institute of Technology; Israel
Fil: Weinfeld, Kamira. Technion - Israel Institute of Technology; Israel
Fil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional; Argentina
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
Fil: Ritter, Dan. Technion - Israel Institute of Technology; Israel
description The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.
publishDate 2018
dc.date.none.fl_str_mv 2018-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/98357
Krylov, Igor; Xu, Xianbin; Zoubenko, Ekaterina; Weinfeld, Kamira; Boyeras Baldomá, Santiago; et al.; Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition; A V S Amer Inst Physics; Journal Of Vacuum Science & Technology A - Vacuum Surfaces And Films; 36; 6; 11-2018; 1-10
0734-2101
CONICET Digital
CONICET
url http://hdl.handle.net/11336/98357
identifier_str_mv Krylov, Igor; Xu, Xianbin; Zoubenko, Ekaterina; Weinfeld, Kamira; Boyeras Baldomá, Santiago; et al.; Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition; A V S Amer Inst Physics; Journal Of Vacuum Science & Technology A - Vacuum Surfaces And Films; 36; 6; 11-2018; 1-10
0734-2101
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1116/1.5057761
info:eu-repo/semantics/altIdentifier/url/https://avs.scitation.org/doi/10.1116/1.5057761
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv A V S Amer Inst Physics
publisher.none.fl_str_mv A V S Amer Inst Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269782062137344
score 13.13397

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