Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

Autores
Palumbo, Félix Roberto Mario; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Winter, R.; Krylov, I.; Eizenberg, M.
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects.The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Winter, R.. Technion-Israel Institute of Technology; Israel
Fil: Krylov, I.. Technion-Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion-Israel Institute of Technology; Israel
Materia
Iii-V
High-K
Temperature Dependence
Trapping/Detrapping
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/40975
Acceder
id CONICETDig_f5178e4a8e29c557448da3de8d057710
oai_identifier_str oai:ri.conicet.gov.ar:11336/40975
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacksPalumbo, Félix Roberto MarioPazos, Sebastián MatíasAguirre, Fernando LeonelWinter, R.Krylov, I.Eizenberg, M.Iii-VHigh-KTemperature DependenceTrapping/Detrappinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects.The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Winter, R.. Technion-Israel Institute of Technology; IsraelFil: Krylov, I.. Technion-Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion-Israel Institute of Technology; IsraelPergamon-Elsevier Science Ltd2017-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/40975Palumbo, Félix Roberto Mario; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Winter, R.; Krylov, I.; et al.; Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 132; 3-2017; 12-180038-1101CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2017.03.009info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110116302866info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:33:32Zoai:ri.conicet.gov.ar:11336/40975instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:33:32.576CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
title Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
spellingShingle Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
Palumbo, Félix Roberto Mario
Iii-V
High-K
Temperature Dependence
Trapping/Detrapping
title_short Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
title_full Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
title_fullStr Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
title_full_unstemmed Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
title_sort Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Winter, R.
Krylov, I.
Eizenberg, M.
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Winter, R.
Krylov, I.
Eizenberg, M.
author_role author
author2 Pazos, Sebastián Matías
Aguirre, Fernando Leonel
Winter, R.
Krylov, I.
Eizenberg, M.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Iii-V
High-K
Temperature Dependence
Trapping/Detrapping
topic Iii-V
High-K
Temperature Dependence
Trapping/Detrapping
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects.The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Winter, R.. Technion-Israel Institute of Technology; Israel
Fil: Krylov, I.. Technion-Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion-Israel Institute of Technology; Israel
description The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects.The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.
publishDate 2017
dc.date.none.fl_str_mv 2017-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/40975
Palumbo, Félix Roberto Mario; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Winter, R.; Krylov, I.; et al.; Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 132; 3-2017; 12-18
0038-1101
CONICET Digital
CONICET
url http://hdl.handle.net/11336/40975
identifier_str_mv Palumbo, Félix Roberto Mario; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Winter, R.; Krylov, I.; et al.; Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 132; 3-2017; 12-18
0038-1101
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2017.03.009
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110116302866
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846781953050673152
score 12.982451

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