Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices

Autores
Zazpe, Raúl; Ungureanu, Mariana; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; Casanova, Félix; Pickup, David F.; Rogero, Celia; Hueso Falcon, Idaira
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Resistance random access memory (ReRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate Co/HfO2/Ti devices incorporating atomic-layer-deposited HfO2 thin films as the active material grown under different atomic layer deposition (ALD) conditions. We focus on analyzing the effect of ALD conditions on the resistive switching behaviour of the devices. Electrical characterization reveals a particular non-crossing current–voltage curve and bipolar resistive switching behaviour. Device memory properties were confirmed by stability and retention measurements as well as voltage pulses, by which logical computational processes were conducted. X-ray photoelectron spectroscopy combined with electrical measurements demonstrates that the presence of Hf sub-oxides at the interface with the underlying Ti layer is required in order to achieve a stable switching device. The ability of Ti to scavenge oxygen from the HfO2 is shown to be affected by the ALD conditions.
Fil: Zazpe, Raúl. CIC nanoGUNE Consolider; España
Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; España
Fil: Golmar, Federico. CIC nanoGUNE Consolider; España. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina
Fil: Stoliar, Pablo Alberto. CIC nanoGUNE Consolider; España. Centre National de la Recherche Scientifique; Francia. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Universite Paris Sud; Francia
Fil: Llopis, Roger. CIC nanoGUNE Consolider; España
Fil: Casanova, Félix. CIC nanoGUNE Consolider; España. Fundación Vasca para la Ciencia; España
Fil: Pickup, David F.. Consejo Superior de Investigaciones Científicas; España. Universidad del País Vasco; España
Fil: Rogero, Celia. Universidad del País Vasco; España. Consejo Superior de Investigaciones Científicas; España
Fil: Hueso Falcon, Idaira. CIC nanoGUNE Consolider; España
Materia
Resistive Switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/34257
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devicesZazpe, RaúlUngureanu, MarianaGolmar, FedericoStoliar, Pablo AlbertoLlopis, RogerCasanova, FélixPickup, David F.Rogero, CeliaHueso Falcon, IdairaResistive Switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Resistance random access memory (ReRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate Co/HfO2/Ti devices incorporating atomic-layer-deposited HfO2 thin films as the active material grown under different atomic layer deposition (ALD) conditions. We focus on analyzing the effect of ALD conditions on the resistive switching behaviour of the devices. Electrical characterization reveals a particular non-crossing current–voltage curve and bipolar resistive switching behaviour. Device memory properties were confirmed by stability and retention measurements as well as voltage pulses, by which logical computational processes were conducted. X-ray photoelectron spectroscopy combined with electrical measurements demonstrates that the presence of Hf sub-oxides at the interface with the underlying Ti layer is required in order to achieve a stable switching device. The ability of Ti to scavenge oxygen from the HfO2 is shown to be affected by the ALD conditions.Fil: Zazpe, Raúl. CIC nanoGUNE Consolider; EspañaFil: Ungureanu, Mariana. CIC nanoGUNE Consolider; EspañaFil: Golmar, Federico. CIC nanoGUNE Consolider; España. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Stoliar, Pablo Alberto. CIC nanoGUNE Consolider; España. Centre National de la Recherche Scientifique; Francia. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Universite Paris Sud; FranciaFil: Llopis, Roger. CIC nanoGUNE Consolider; EspañaFil: Casanova, Félix. CIC nanoGUNE Consolider; España. Fundación Vasca para la Ciencia; EspañaFil: Pickup, David F.. Consejo Superior de Investigaciones Científicas; España. Universidad del País Vasco; EspañaFil: Rogero, Celia. Universidad del País Vasco; España. Consejo Superior de Investigaciones Científicas; EspañaFil: Hueso Falcon, Idaira. CIC nanoGUNE Consolider; EspañaRoyal Society of Chemistry2014-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/34257Zazpe, Raúl; Ungureanu, Mariana; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; et al.; Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices; Royal Society of Chemistry; Journal of Materials Chemistry C; 2; 17; 1-2014; 3204-32112050-7526CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1039/C3TC31819Binfo:eu-repo/semantics/altIdentifier/url/http://pubs.rsc.org/en/content/articlelanding/2014/tc/c3tc31819b#!divAbstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:59:34Zoai:ri.conicet.gov.ar:11336/34257instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:59:34.332CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
title Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
spellingShingle Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
Zazpe, Raúl
Resistive Switching
title_short Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
title_full Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
title_fullStr Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
title_full_unstemmed Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
title_sort Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
dc.creator.none.fl_str_mv Zazpe, Raúl
Ungureanu, Mariana
Golmar, Federico
Stoliar, Pablo Alberto
Llopis, Roger
Casanova, Félix
Pickup, David F.
Rogero, Celia
Hueso Falcon, Idaira
author Zazpe, Raúl
author_facet Zazpe, Raúl
Ungureanu, Mariana
Golmar, Federico
Stoliar, Pablo Alberto
Llopis, Roger
Casanova, Félix
Pickup, David F.
Rogero, Celia
Hueso Falcon, Idaira
author_role author
author2 Ungureanu, Mariana
Golmar, Federico
Stoliar, Pablo Alberto
Llopis, Roger
Casanova, Félix
Pickup, David F.
Rogero, Celia
Hueso Falcon, Idaira
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Resistive Switching
topic Resistive Switching
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Resistance random access memory (ReRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate Co/HfO2/Ti devices incorporating atomic-layer-deposited HfO2 thin films as the active material grown under different atomic layer deposition (ALD) conditions. We focus on analyzing the effect of ALD conditions on the resistive switching behaviour of the devices. Electrical characterization reveals a particular non-crossing current–voltage curve and bipolar resistive switching behaviour. Device memory properties were confirmed by stability and retention measurements as well as voltage pulses, by which logical computational processes were conducted. X-ray photoelectron spectroscopy combined with electrical measurements demonstrates that the presence of Hf sub-oxides at the interface with the underlying Ti layer is required in order to achieve a stable switching device. The ability of Ti to scavenge oxygen from the HfO2 is shown to be affected by the ALD conditions.
Fil: Zazpe, Raúl. CIC nanoGUNE Consolider; España
Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; España
Fil: Golmar, Federico. CIC nanoGUNE Consolider; España. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina
Fil: Stoliar, Pablo Alberto. CIC nanoGUNE Consolider; España. Centre National de la Recherche Scientifique; Francia. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Universite Paris Sud; Francia
Fil: Llopis, Roger. CIC nanoGUNE Consolider; España
Fil: Casanova, Félix. CIC nanoGUNE Consolider; España. Fundación Vasca para la Ciencia; España
Fil: Pickup, David F.. Consejo Superior de Investigaciones Científicas; España. Universidad del País Vasco; España
Fil: Rogero, Celia. Universidad del País Vasco; España. Consejo Superior de Investigaciones Científicas; España
Fil: Hueso Falcon, Idaira. CIC nanoGUNE Consolider; España
description Resistance random access memory (ReRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate Co/HfO2/Ti devices incorporating atomic-layer-deposited HfO2 thin films as the active material grown under different atomic layer deposition (ALD) conditions. We focus on analyzing the effect of ALD conditions on the resistive switching behaviour of the devices. Electrical characterization reveals a particular non-crossing current–voltage curve and bipolar resistive switching behaviour. Device memory properties were confirmed by stability and retention measurements as well as voltage pulses, by which logical computational processes were conducted. X-ray photoelectron spectroscopy combined with electrical measurements demonstrates that the presence of Hf sub-oxides at the interface with the underlying Ti layer is required in order to achieve a stable switching device. The ability of Ti to scavenge oxygen from the HfO2 is shown to be affected by the ALD conditions.
publishDate 2014
dc.date.none.fl_str_mv 2014-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/34257
Zazpe, Raúl; Ungureanu, Mariana; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; et al.; Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices; Royal Society of Chemistry; Journal of Materials Chemistry C; 2; 17; 1-2014; 3204-3211
2050-7526
CONICET Digital
CONICET
url http://hdl.handle.net/11336/34257
identifier_str_mv Zazpe, Raúl; Ungureanu, Mariana; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; et al.; Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices; Royal Society of Chemistry; Journal of Materials Chemistry C; 2; 17; 1-2014; 3204-3211
2050-7526
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1039/C3TC31819B
info:eu-repo/semantics/altIdentifier/url/http://pubs.rsc.org/en/content/articlelanding/2014/tc/c3tc31819b#!divAbstract
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Royal Society of Chemistry
publisher.none.fl_str_mv Royal Society of Chemistry
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269588146880512
score 13.13397

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