A light-controlled resistive switching memory

Autores
Ungureanu, Mariana; Zazpe, Raul; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; Casanova, Felix; Hueso, Luis E.
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al 2O 3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al 2O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2O 3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.
Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; España
Fil: Zazpe, Raul. CIC nanoGUNE Consolider; España
Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. CIC nanoGUNE Consolider; España
Fil: Stoliar, Pablo Alberto. Comisión Nacional de Energía Atómica; Argentina. CIC nanoGUNE Consolider; España
Fil: Llopis, Roger. CIC nanoGUNE Consolider; España
Fil: Casanova, Felix. CIC nanoGUNE Consolider; España. Basque Foundation for Science; España
Fil: Hueso, Luis E.. CIC nanoGUNE Consolider; España. Basque Foundation for Science; España
Materia
LIGHT SENSING
MEMORY DEVICES
OXIDE THIN FILMS
RESISTIVE SWITCHING
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/189090
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/189090
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling A light-controlled resistive switching memoryUngureanu, MarianaZazpe, RaulGolmar, FedericoStoliar, Pablo AlbertoLlopis, RogerCasanova, FelixHueso, Luis E.LIGHT SENSINGMEMORY DEVICESOXIDE THIN FILMSRESISTIVE SWITCHINGhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al 2O 3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al 2O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2O 3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; EspañaFil: Zazpe, Raul. CIC nanoGUNE Consolider; EspañaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. CIC nanoGUNE Consolider; EspañaFil: Stoliar, Pablo Alberto. Comisión Nacional de Energía Atómica; Argentina. CIC nanoGUNE Consolider; EspañaFil: Llopis, Roger. CIC nanoGUNE Consolider; EspañaFil: Casanova, Felix. CIC nanoGUNE Consolider; España. Basque Foundation for Science; EspañaFil: Hueso, Luis E.. CIC nanoGUNE Consolider; España. Basque Foundation for Science; EspañaWiley VCH Verlag2012-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/189090Ungureanu, Mariana; Zazpe, Raul; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; et al.; A light-controlled resistive switching memory; Wiley VCH Verlag; Advanced Materials; 24; 18; 4-2012; 2496-25000935-9648CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/adma.201200382/fullinfo:eu-repo/semantics/altIdentifier/doi/10.1002/adma.201200382info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:54:01Zoai:ri.conicet.gov.ar:11336/189090instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:54:02.193CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv A light-controlled resistive switching memory
title A light-controlled resistive switching memory
spellingShingle A light-controlled resistive switching memory
Ungureanu, Mariana
LIGHT SENSING
MEMORY DEVICES
OXIDE THIN FILMS
RESISTIVE SWITCHING
title_short A light-controlled resistive switching memory
title_full A light-controlled resistive switching memory
title_fullStr A light-controlled resistive switching memory
title_full_unstemmed A light-controlled resistive switching memory
title_sort A light-controlled resistive switching memory
dc.creator.none.fl_str_mv Ungureanu, Mariana
Zazpe, Raul
Golmar, Federico
Stoliar, Pablo Alberto
Llopis, Roger
Casanova, Felix
Hueso, Luis E.
author Ungureanu, Mariana
author_facet Ungureanu, Mariana
Zazpe, Raul
Golmar, Federico
Stoliar, Pablo Alberto
Llopis, Roger
Casanova, Felix
Hueso, Luis E.
author_role author
author2 Zazpe, Raul
Golmar, Federico
Stoliar, Pablo Alberto
Llopis, Roger
Casanova, Felix
Hueso, Luis E.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv LIGHT SENSING
MEMORY DEVICES
OXIDE THIN FILMS
RESISTIVE SWITCHING
topic LIGHT SENSING
MEMORY DEVICES
OXIDE THIN FILMS
RESISTIVE SWITCHING
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al 2O 3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al 2O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2O 3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.
Fil: Ungureanu, Mariana. CIC nanoGUNE Consolider; España
Fil: Zazpe, Raul. CIC nanoGUNE Consolider; España
Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. CIC nanoGUNE Consolider; España
Fil: Stoliar, Pablo Alberto. Comisión Nacional de Energía Atómica; Argentina. CIC nanoGUNE Consolider; España
Fil: Llopis, Roger. CIC nanoGUNE Consolider; España
Fil: Casanova, Felix. CIC nanoGUNE Consolider; España. Basque Foundation for Science; España
Fil: Hueso, Luis E.. CIC nanoGUNE Consolider; España. Basque Foundation for Science; España
description Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al 2O 3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al 2O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2O 3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.
publishDate 2012
dc.date.none.fl_str_mv 2012-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/189090
Ungureanu, Mariana; Zazpe, Raul; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; et al.; A light-controlled resistive switching memory; Wiley VCH Verlag; Advanced Materials; 24; 18; 4-2012; 2496-2500
0935-9648
CONICET Digital
CONICET
url http://hdl.handle.net/11336/189090
identifier_str_mv Ungureanu, Mariana; Zazpe, Raul; Golmar, Federico; Stoliar, Pablo Alberto; Llopis, Roger; et al.; A light-controlled resistive switching memory; Wiley VCH Verlag; Advanced Materials; 24; 18; 4-2012; 2496-2500
0935-9648
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/adma.201200382/full
info:eu-repo/semantics/altIdentifier/doi/10.1002/adma.201200382
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley VCH Verlag
publisher.none.fl_str_mv Wiley VCH Verlag
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269260359925760
score 13.13397

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