Resistive switching in rectifying interfaces of metal-semiconductor-metal structures

Autores
Zazpe, R.; Stoliar, Pablo Alberto; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, L.
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact.
Fil: Zazpe, R.. CIC nanoGUNE; España
Fil: Stoliar, Pablo Alberto. CIC nanoGUNE; España. Universite de Nantes; Francia. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Fil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Fil: Hueso, L.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Materia
Bipolar resistive switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/24929
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/24929
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Resistive switching in rectifying interfaces of metal-semiconductor-metal structuresZazpe, R.Stoliar, Pablo AlbertoGolmar, FedericoLlopis, R.Casanova, F.Hueso, L.Bipolar resistive switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact.Fil: Zazpe, R.. CIC nanoGUNE; EspañaFil: Stoliar, Pablo Alberto. CIC nanoGUNE; España. Universite de Nantes; Francia. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaFil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, R.. CIC nanoGUNE; EspañaFil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Hueso, L.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaAmerican Institute of Physics2013-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/24929Zazpe, R.; Stoliar, Pablo Alberto; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; Resistive switching in rectifying interfaces of metal-semiconductor-metal structures; American Institute of Physics; Applied Physics Letters; 103; 8-2013; 1-50003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4818730info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4818730info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:04:43Zoai:ri.conicet.gov.ar:11336/24929instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:04:43.309CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
title Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
spellingShingle Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
Zazpe, R.
Bipolar resistive switching
title_short Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
title_full Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
title_fullStr Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
title_full_unstemmed Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
title_sort Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
dc.creator.none.fl_str_mv Zazpe, R.
Stoliar, Pablo Alberto
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, L.
author Zazpe, R.
author_facet Zazpe, R.
Stoliar, Pablo Alberto
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, L.
author_role author
author2 Stoliar, Pablo Alberto
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, L.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Bipolar resistive switching
topic Bipolar resistive switching
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact.
Fil: Zazpe, R.. CIC nanoGUNE; España
Fil: Stoliar, Pablo Alberto. CIC nanoGUNE; España. Universite de Nantes; Francia. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Fil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Fil: Hueso, L.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
description We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact.
publishDate 2013
dc.date.none.fl_str_mv 2013-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/24929
Zazpe, R.; Stoliar, Pablo Alberto; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; Resistive switching in rectifying interfaces of metal-semiconductor-metal structures; American Institute of Physics; Applied Physics Letters; 103; 8-2013; 1-5
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/24929
identifier_str_mv Zazpe, R.; Stoliar, Pablo Alberto; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; Resistive switching in rectifying interfaces of metal-semiconductor-metal structures; American Institute of Physics; Applied Physics Letters; 103; 8-2013; 1-5
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4818730
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4818730
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269871981723648
score 13.13397

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