Model and fitting results for the filamentary conduction in MIM resistive switching devices

Autores
Palumbo, Félix Roberto Mario; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V.
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Experimental results for the resistive switching effect occurring in Pt/HfO2/Pt devices are analyzed within the framework of the two-terminal Landauer theory for mesoscopic conducting systems. It is shown that the magnitude of the current and the voltage dependence of the switching conduction characteristic are mainly dictated by the size of the filamentary path generated after electroforming. The temperature dependence of the high resistance conduction characteristics is also modeled in a consistent manner with the proposed picture.
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Fil: Ghibaudo, Gerard. Université Savoie Mont Blanc; Francia
Fil: Jousseaume, V.. Université Savoie Mont Blanc; Francia
Materia
resistive switching
MIM
Dielectric Breakdown
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/194555
Acceder
id CONICETDig_4ed47dddf293593250bb8a957de55999
oai_identifier_str oai:ri.conicet.gov.ar:11336/194555
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Model and fitting results for the filamentary conduction in MIM resistive switching devicesPalumbo, Félix Roberto MarioMiranda, EnriqueGhibaudo, GerardJousseaume, V.resistive switchingMIMDielectric Breakdownhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Experimental results for the resistive switching effect occurring in Pt/HfO2/Pt devices are analyzed within the framework of the two-terminal Landauer theory for mesoscopic conducting systems. It is shown that the magnitude of the current and the voltage dependence of the switching conduction characteristic are mainly dictated by the size of the filamentary path generated after electroforming. The temperature dependence of the high resistance conduction characteristics is also modeled in a consistent manner with the proposed picture.Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; EspañaFil: Ghibaudo, Gerard. Université Savoie Mont Blanc; FranciaFil: Jousseaume, V.. Université Savoie Mont Blanc; FranciaElectrochemical Society Inc.2011-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/194555Palumbo, Félix Roberto Mario; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V.; Model and fitting results for the filamentary conduction in MIM resistive switching devices; Electrochemical Society Inc.; Electrochemical Society ECS Transactions; 39; 1; 10-2011; 187-1931938-5862CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1149/1.3615193info:eu-repo/semantics/altIdentifier/doi/10.1149/1.3615193info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-17T11:39:21Zoai:ri.conicet.gov.ar:11336/194555instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-17 11:39:22.084CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Model and fitting results for the filamentary conduction in MIM resistive switching devices
title Model and fitting results for the filamentary conduction in MIM resistive switching devices
spellingShingle Model and fitting results for the filamentary conduction in MIM resistive switching devices
Palumbo, Félix Roberto Mario
resistive switching
MIM
Dielectric Breakdown
title_short Model and fitting results for the filamentary conduction in MIM resistive switching devices
title_full Model and fitting results for the filamentary conduction in MIM resistive switching devices
title_fullStr Model and fitting results for the filamentary conduction in MIM resistive switching devices
title_full_unstemmed Model and fitting results for the filamentary conduction in MIM resistive switching devices
title_sort Model and fitting results for the filamentary conduction in MIM resistive switching devices
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Miranda, Enrique
Ghibaudo, Gerard
Jousseaume, V.
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Miranda, Enrique
Ghibaudo, Gerard
Jousseaume, V.
author_role author
author2 Miranda, Enrique
Ghibaudo, Gerard
Jousseaume, V.
author2_role author
author
author
dc.subject.none.fl_str_mv resistive switching
MIM
Dielectric Breakdown
topic resistive switching
MIM
Dielectric Breakdown
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Experimental results for the resistive switching effect occurring in Pt/HfO2/Pt devices are analyzed within the framework of the two-terminal Landauer theory for mesoscopic conducting systems. It is shown that the magnitude of the current and the voltage dependence of the switching conduction characteristic are mainly dictated by the size of the filamentary path generated after electroforming. The temperature dependence of the high resistance conduction characteristics is also modeled in a consistent manner with the proposed picture.
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Fil: Ghibaudo, Gerard. Université Savoie Mont Blanc; Francia
Fil: Jousseaume, V.. Université Savoie Mont Blanc; Francia
description Experimental results for the resistive switching effect occurring in Pt/HfO2/Pt devices are analyzed within the framework of the two-terminal Landauer theory for mesoscopic conducting systems. It is shown that the magnitude of the current and the voltage dependence of the switching conduction characteristic are mainly dictated by the size of the filamentary path generated after electroforming. The temperature dependence of the high resistance conduction characteristics is also modeled in a consistent manner with the proposed picture.
publishDate 2011
dc.date.none.fl_str_mv 2011-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/194555
Palumbo, Félix Roberto Mario; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V.; Model and fitting results for the filamentary conduction in MIM resistive switching devices; Electrochemical Society Inc.; Electrochemical Society ECS Transactions; 39; 1; 10-2011; 187-193
1938-5862
CONICET Digital
CONICET
url http://hdl.handle.net/11336/194555
identifier_str_mv Palumbo, Félix Roberto Mario; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V.; Model and fitting results for the filamentary conduction in MIM resistive switching devices; Electrochemical Society Inc.; Electrochemical Society ECS Transactions; 39; 1; 10-2011; 187-193
1938-5862
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1149/1.3615193
info:eu-repo/semantics/altIdentifier/doi/10.1149/1.3615193
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Electrochemical Society Inc.
publisher.none.fl_str_mv Electrochemical Society Inc.
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1843606750953996288
score 13.000565

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