Numerical and experimental study of stochastic resistive switching

Autores
Patterson, Germán Agustín; Fierens, Pablo Ignacio; García, A. A.; Grosz, Diego Fernando
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable. © 2013 American Physical Society.
Fil: Patterson, Germán Agustín. Instituto Tecnológico de Buenos Aires; Argentina
Fil: Fierens, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; Argentina
Fil: García, A. A.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina
Fil: Grosz, Diego Fernando. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; Argentina
Materia
Stochastic
Resistive
Switching
Memristors
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/77855
Acceder
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network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling Numerical and experimental study of stochastic resistive switchingPatterson, Germán AgustínFierens, Pablo IgnacioGarcía, A. A.Grosz, Diego FernandoStochasticResistiveSwitchingMemristorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable. © 2013 American Physical Society.Fil: Patterson, Germán Agustín. Instituto Tecnológico de Buenos Aires; ArgentinaFil: Fierens, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; ArgentinaFil: García, A. A.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; ArgentinaFil: Grosz, Diego Fernando. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; ArgentinaAmerican Physical Society2013-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/77855Patterson, Germán Agustín; Fierens, Pablo Ignacio; García, A. A.; Grosz, Diego Fernando; Numerical and experimental study of stochastic resistive switching; American Physical Society; Physical Review E: Statistical, Nonlinear and Soft Matter Physics; 87; 1; 1-2013; 1-41539-3755CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevE.87.012128info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/pre/abstract/10.1103/PhysRevE.87.012128info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:05:58Zoai:ri.conicet.gov.ar:11336/77855instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:05:58.892CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Numerical and experimental study of stochastic resistive switching
title Numerical and experimental study of stochastic resistive switching
spellingShingle Numerical and experimental study of stochastic resistive switching
Patterson, Germán Agustín
Stochastic
Resistive
Switching
Memristors
title_short Numerical and experimental study of stochastic resistive switching
title_full Numerical and experimental study of stochastic resistive switching
title_fullStr Numerical and experimental study of stochastic resistive switching
title_full_unstemmed Numerical and experimental study of stochastic resistive switching
title_sort Numerical and experimental study of stochastic resistive switching
dc.creator.none.fl_str_mv Patterson, Germán Agustín
Fierens, Pablo Ignacio
García, A. A.
Grosz, Diego Fernando
author Patterson, Germán Agustín
author_facet Patterson, Germán Agustín
Fierens, Pablo Ignacio
García, A. A.
Grosz, Diego Fernando
author_role author
author2 Fierens, Pablo Ignacio
García, A. A.
Grosz, Diego Fernando
author2_role author
author
author
dc.subject.none.fl_str_mv Stochastic
Resistive
Switching
Memristors
topic Stochastic
Resistive
Switching
Memristors
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable. © 2013 American Physical Society.
Fil: Patterson, Germán Agustín. Instituto Tecnológico de Buenos Aires; Argentina
Fil: Fierens, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; Argentina
Fil: García, A. A.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina
Fil: Grosz, Diego Fernando. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Tecnológico de Buenos Aires; Argentina
description In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable. © 2013 American Physical Society.
publishDate 2013
dc.date.none.fl_str_mv 2013-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/77855
Patterson, Germán Agustín; Fierens, Pablo Ignacio; García, A. A.; Grosz, Diego Fernando; Numerical and experimental study of stochastic resistive switching; American Physical Society; Physical Review E: Statistical, Nonlinear and Soft Matter Physics; 87; 1; 1-2013; 1-4
1539-3755
CONICET Digital
CONICET
url http://hdl.handle.net/11336/77855
identifier_str_mv Patterson, Germán Agustín; Fierens, Pablo Ignacio; García, A. A.; Grosz, Diego Fernando; Numerical and experimental study of stochastic resistive switching; American Physical Society; Physical Review E: Statistical, Nonlinear and Soft Matter Physics; 87; 1; 1-2013; 1-4
1539-3755
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevE.87.012128
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/pre/abstract/10.1103/PhysRevE.87.012128
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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