A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks

Autores
Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; Krishnan, Siddarth; Young, Chadwin; Choi, Rino; Bersuker, Gennadi; Stathis, James
Año de publicación
2008
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.
Fil: Pagano, Roberto. Consiglio Nazionale delle Ricerche; Italia
Fil: Lombardo, Salvatore. Consiglio Nazionale delle Ricerche; Italia
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Carloni, Stefania. Consiglio Nazionale delle Ricerche; Italia
Fil: Kirsch, Paul. Sematech; Estados Unidos
Fil: Krishnan, Siddarth. Sematech; Estados Unidos
Fil: Young, Chadwin. Sematech; Estados Unidos
Fil: Choi, Rino. Sematech; Estados Unidos
Fil: Bersuker, Gennadi. Sematech; Estados Unidos
Fil: Stathis, James. Ibm Research; Estados Unidos
Materia
HIGH K DIELECTRICS
RELIABILITY
METAL GATES
OXIDE BREAKDOWN
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/248663
Acceder
id CONICETDig_de3ca8a3fdb703eb282d94762598ab68
oai_identifier_str oai:ri.conicet.gov.ar:11336/248663
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate StacksPagano, RobertoLombardo, SalvatorePalumbo, Félix Roberto MarioCarloni, StefaniaKirsch, PaulKrishnan, SiddarthYoung, ChadwinChoi, RinoBersuker, GennadiStathis, JamesHIGH K DIELECTRICSRELIABILITYMETAL GATESOXIDE BREAKDOWNhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.Fil: Pagano, Roberto. Consiglio Nazionale delle Ricerche; ItaliaFil: Lombardo, Salvatore. Consiglio Nazionale delle Ricerche; ItaliaFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Carloni, Stefania. Consiglio Nazionale delle Ricerche; ItaliaFil: Kirsch, Paul. Sematech; Estados UnidosFil: Krishnan, Siddarth. Sematech; Estados UnidosFil: Young, Chadwin. Sematech; Estados UnidosFil: Choi, Rino. Sematech; Estados UnidosFil: Bersuker, Gennadi. Sematech; Estados UnidosFil: Stathis, James. Ibm Research; Estados UnidosIOP Publishing2008-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/248663Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; et al.; A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks; IOP Publishing; ECS Transactions; 14; 1; 12-2008; 303-3091938-58621938-6737CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1149/1.2956044info:eu-repo/semantics/altIdentifier/doi/10.1149/1.2956044info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:46:36Zoai:ri.conicet.gov.ar:11336/248663instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:46:36.581CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
title A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
spellingShingle A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
Pagano, Roberto
HIGH K DIELECTRICS
RELIABILITY
METAL GATES
OXIDE BREAKDOWN
title_short A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
title_full A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
title_fullStr A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
title_full_unstemmed A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
title_sort A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
dc.creator.none.fl_str_mv Pagano, Roberto
Lombardo, Salvatore
Palumbo, Félix Roberto Mario
Carloni, Stefania
Kirsch, Paul
Krishnan, Siddarth
Young, Chadwin
Choi, Rino
Bersuker, Gennadi
Stathis, James
author Pagano, Roberto
author_facet Pagano, Roberto
Lombardo, Salvatore
Palumbo, Félix Roberto Mario
Carloni, Stefania
Kirsch, Paul
Krishnan, Siddarth
Young, Chadwin
Choi, Rino
Bersuker, Gennadi
Stathis, James
author_role author
author2 Lombardo, Salvatore
Palumbo, Félix Roberto Mario
Carloni, Stefania
Kirsch, Paul
Krishnan, Siddarth
Young, Chadwin
Choi, Rino
Bersuker, Gennadi
Stathis, James
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv HIGH K DIELECTRICS
RELIABILITY
METAL GATES
OXIDE BREAKDOWN
topic HIGH K DIELECTRICS
RELIABILITY
METAL GATES
OXIDE BREAKDOWN
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.
Fil: Pagano, Roberto. Consiglio Nazionale delle Ricerche; Italia
Fil: Lombardo, Salvatore. Consiglio Nazionale delle Ricerche; Italia
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Carloni, Stefania. Consiglio Nazionale delle Ricerche; Italia
Fil: Kirsch, Paul. Sematech; Estados Unidos
Fil: Krishnan, Siddarth. Sematech; Estados Unidos
Fil: Young, Chadwin. Sematech; Estados Unidos
Fil: Choi, Rino. Sematech; Estados Unidos
Fil: Bersuker, Gennadi. Sematech; Estados Unidos
Fil: Stathis, James. Ibm Research; Estados Unidos
description Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.
publishDate 2008
dc.date.none.fl_str_mv 2008-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/248663
Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; et al.; A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks; IOP Publishing; ECS Transactions; 14; 1; 12-2008; 303-309
1938-5862
1938-6737
CONICET Digital
CONICET
url http://hdl.handle.net/11336/248663
identifier_str_mv Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; et al.; A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks; IOP Publishing; ECS Transactions; 14; 1; 12-2008; 303-309
1938-5862
1938-6737
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1149/1.2956044
info:eu-repo/semantics/altIdentifier/doi/10.1149/1.2956044
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613455545368576
score 13.070432

Publicaciones similares