Resistive switching effect on Al2O3/InGaAs stacks

Autores
Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; Israel
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Krylov, I.. Technion - Israel Institute of Technology; Israel
Fil: Ritter, D.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
Materia
Resistive Switching
High-K Dielectrics
Oxide Breakdown
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/20949
Acceder
id CONICETDig_c88922da6c3328e666fb57de038d94f5
oai_identifier_str oai:ri.conicet.gov.ar:11336/20949
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Resistive switching effect on Al2O3/InGaAs stacksPalumbo, Félix Roberto MarioShekhter, P.Krylov, I.Ritter, D.Eizenberg, M.Resistive SwitchingHigh-K DielectricsOxide Breakdownhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channelsFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; IsraelFil: Shekhter, P.. Technion - Israel Institute of Technology; IsraelFil: Krylov, I.. Technion - Israel Institute of Technology; IsraelFil: Ritter, D.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelElsevier Science2013-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/20949Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.; Resistive switching effect on Al2O3/InGaAs stacks; Elsevier Science; Microelectronic Engineering; 109; 9-2013; 83-860167-9317CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0167931713002967info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mee.2013.03.079info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:01:54Zoai:ri.conicet.gov.ar:11336/20949instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:01:55.034CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Resistive switching effect on Al2O3/InGaAs stacks
title Resistive switching effect on Al2O3/InGaAs stacks
spellingShingle Resistive switching effect on Al2O3/InGaAs stacks
Palumbo, Félix Roberto Mario
Resistive Switching
High-K Dielectrics
Oxide Breakdown
title_short Resistive switching effect on Al2O3/InGaAs stacks
title_full Resistive switching effect on Al2O3/InGaAs stacks
title_fullStr Resistive switching effect on Al2O3/InGaAs stacks
title_full_unstemmed Resistive switching effect on Al2O3/InGaAs stacks
title_sort Resistive switching effect on Al2O3/InGaAs stacks
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Shekhter, P.
Krylov, I.
Ritter, D.
Eizenberg, M.
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Shekhter, P.
Krylov, I.
Ritter, D.
Eizenberg, M.
author_role author
author2 Shekhter, P.
Krylov, I.
Ritter, D.
Eizenberg, M.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Resistive Switching
High-K Dielectrics
Oxide Breakdown
topic Resistive Switching
High-K Dielectrics
Oxide Breakdown
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; Israel
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Krylov, I.. Technion - Israel Institute of Technology; Israel
Fil: Ritter, D.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
description The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels
publishDate 2013
dc.date.none.fl_str_mv 2013-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/20949
Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.; Resistive switching effect on Al2O3/InGaAs stacks; Elsevier Science; Microelectronic Engineering; 109; 9-2013; 83-86
0167-9317
CONICET Digital
CONICET
url http://hdl.handle.net/11336/20949
identifier_str_mv Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.; Resistive switching effect on Al2O3/InGaAs stacks; Elsevier Science; Microelectronic Engineering; 109; 9-2013; 83-86
0167-9317
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0167931713002967
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mee.2013.03.079
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269725181083648
score 13.13397

Publicaciones similares