Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals

Autores
Harvey, Taylor B.; Bonafé, Franco Paúl; Updegrave, Ty; Voggu, Vikas Reddy; Thomas, Cherrelle; Kamarajugadda, Sirish C.; Stolle, C. Jackson; Pernik, Douglas; Du, Jiang; Korgel, Brian A.
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1 μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of carbon and selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.
Fil: Harvey, Taylor B.. Texas A&M University; Estados Unidos
Fil: Bonafé, Franco Paúl. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Updegrave, Ty. University of Texas at Austin; Estados Unidos
Fil: Voggu, Vikas Reddy. University of Texas at Austin; Estados Unidos
Fil: Thomas, Cherrelle. University of Texas at Austin; Estados Unidos
Fil: Kamarajugadda, Sirish C.. University of Texas at Austin; Estados Unidos
Fil: Stolle, C. Jackson. University of Texas at Austin; Estados Unidos
Fil: Pernik, Douglas. University of Texas at Austin; Estados Unidos
Fil: Du, Jiang. University of Texas at Austin; Estados Unidos
Fil: Korgel, Brian A.. University of Texas at Austin; Estados Unidos
Materia
CIGS
COPPER INDIUM GALLIUM SELENIDE
NANOCRYSTALS
PHOTOVOLTAICS
SELENIZATION
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/124226
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/124226
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystalsHarvey, Taylor B.Bonafé, Franco PaúlUpdegrave, TyVoggu, Vikas ReddyThomas, CherrelleKamarajugadda, Sirish C.Stolle, C. JacksonPernik, DouglasDu, JiangKorgel, Brian A.CIGSCOPPER INDIUM GALLIUM SELENIDENANOCRYSTALSPHOTOVOLTAICSSELENIZATIONhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1 μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of carbon and selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.Fil: Harvey, Taylor B.. Texas A&M University; Estados UnidosFil: Bonafé, Franco Paúl. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Updegrave, Ty. University of Texas at Austin; Estados UnidosFil: Voggu, Vikas Reddy. University of Texas at Austin; Estados UnidosFil: Thomas, Cherrelle. University of Texas at Austin; Estados UnidosFil: Kamarajugadda, Sirish C.. University of Texas at Austin; Estados UnidosFil: Stolle, C. Jackson. University of Texas at Austin; Estados UnidosFil: Pernik, Douglas. University of Texas at Austin; Estados UnidosFil: Du, Jiang. University of Texas at Austin; Estados UnidosFil: Korgel, Brian A.. University of Texas at Austin; Estados UnidosAmerican Chemical Society2019-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/124226Harvey, Taylor B.; Bonafé, Franco Paúl; Updegrave, Ty; Voggu, Vikas Reddy; Thomas, Cherrelle; et al.; Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals; American Chemical Society; ACS Applied Energy Materials; 2; 1; 1-2019; 736-7422574-0962CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/full/10.1021/acsaem.8b01800info:eu-repo/semantics/altIdentifier/doi/10.1021/acsaem.8b01800info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:04:23Zoai:ri.conicet.gov.ar:11336/124226instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:04:23.372CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
title Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
spellingShingle Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
Harvey, Taylor B.
CIGS
COPPER INDIUM GALLIUM SELENIDE
NANOCRYSTALS
PHOTOVOLTAICS
SELENIZATION
title_short Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
title_full Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
title_fullStr Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
title_full_unstemmed Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
title_sort Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals
dc.creator.none.fl_str_mv Harvey, Taylor B.
Bonafé, Franco Paúl
Updegrave, Ty
Voggu, Vikas Reddy
Thomas, Cherrelle
Kamarajugadda, Sirish C.
Stolle, C. Jackson
Pernik, Douglas
Du, Jiang
Korgel, Brian A.
author Harvey, Taylor B.
author_facet Harvey, Taylor B.
Bonafé, Franco Paúl
Updegrave, Ty
Voggu, Vikas Reddy
Thomas, Cherrelle
Kamarajugadda, Sirish C.
Stolle, C. Jackson
Pernik, Douglas
Du, Jiang
Korgel, Brian A.
author_role author
author2 Bonafé, Franco Paúl
Updegrave, Ty
Voggu, Vikas Reddy
Thomas, Cherrelle
Kamarajugadda, Sirish C.
Stolle, C. Jackson
Pernik, Douglas
Du, Jiang
Korgel, Brian A.
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv CIGS
COPPER INDIUM GALLIUM SELENIDE
NANOCRYSTALS
PHOTOVOLTAICS
SELENIZATION
topic CIGS
COPPER INDIUM GALLIUM SELENIDE
NANOCRYSTALS
PHOTOVOLTAICS
SELENIZATION
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1 μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of carbon and selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.
Fil: Harvey, Taylor B.. Texas A&M University; Estados Unidos
Fil: Bonafé, Franco Paúl. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Updegrave, Ty. University of Texas at Austin; Estados Unidos
Fil: Voggu, Vikas Reddy. University of Texas at Austin; Estados Unidos
Fil: Thomas, Cherrelle. University of Texas at Austin; Estados Unidos
Fil: Kamarajugadda, Sirish C.. University of Texas at Austin; Estados Unidos
Fil: Stolle, C. Jackson. University of Texas at Austin; Estados Unidos
Fil: Pernik, Douglas. University of Texas at Austin; Estados Unidos
Fil: Du, Jiang. University of Texas at Austin; Estados Unidos
Fil: Korgel, Brian A.. University of Texas at Austin; Estados Unidos
description Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1 μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of carbon and selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.
publishDate 2019
dc.date.none.fl_str_mv 2019-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/124226
Harvey, Taylor B.; Bonafé, Franco Paúl; Updegrave, Ty; Voggu, Vikas Reddy; Thomas, Cherrelle; et al.; Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals; American Chemical Society; ACS Applied Energy Materials; 2; 1; 1-2019; 736-742
2574-0962
CONICET Digital
CONICET
url http://hdl.handle.net/11336/124226
identifier_str_mv Harvey, Taylor B.; Bonafé, Franco Paúl; Updegrave, Ty; Voggu, Vikas Reddy; Thomas, Cherrelle; et al.; Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals; American Chemical Society; ACS Applied Energy Materials; 2; 1; 1-2019; 736-742
2574-0962
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/full/10.1021/acsaem.8b01800
info:eu-repo/semantics/altIdentifier/doi/10.1021/acsaem.8b01800
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842980144339222528
score 12.993085

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