Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

Autores
Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; Dunin-Borkowski, R.E.
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.
Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Van Aken, B.B.. No especifíca;
Fil: Soppe, W.J.. No especifíca;
Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Materia
EELS
celdas solares
plasmon
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/112654
Acceder
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cellsDuchamp, M.Boothroyd, C.B.Moreno, Mario Sergio JesusVan Aken, B.B.Soppe, W.J.Dunin-Borkowski, R.E.EELSceldas solaresplasmonhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Van Aken, B.B.. No especifíca;Fil: Soppe, W.J.. No especifíca;Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaAmerican Institute of Physics2013-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/112654Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; et al.; Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells; American Institute of Physics; Journal of Applied Physics; 113; 9; 3-2013; 935131-9351380021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/abs/10.1063/1.4793587?ver=pdfcov&journalCode=japinfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4793587info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T12:02:48Zoai:ri.conicet.gov.ar:11336/112654instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 12:02:49.185CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
title Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
spellingShingle Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
Duchamp, M.
EELS
celdas solares
plasmon
title_short Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
title_full Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
title_fullStr Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
title_full_unstemmed Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
title_sort Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
dc.creator.none.fl_str_mv Duchamp, M.
Boothroyd, C.B.
Moreno, Mario Sergio Jesus
Van Aken, B.B.
Soppe, W.J.
Dunin-Borkowski, R.E.
author Duchamp, M.
author_facet Duchamp, M.
Boothroyd, C.B.
Moreno, Mario Sergio Jesus
Van Aken, B.B.
Soppe, W.J.
Dunin-Borkowski, R.E.
author_role author
author2 Boothroyd, C.B.
Moreno, Mario Sergio Jesus
Van Aken, B.B.
Soppe, W.J.
Dunin-Borkowski, R.E.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv EELS
celdas solares
plasmon
topic EELS
celdas solares
plasmon
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.
Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Van Aken, B.B.. No especifíca;
Fil: Soppe, W.J.. No especifíca;
Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
description Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.
publishDate 2013
dc.date.none.fl_str_mv 2013-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/112654
Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; et al.; Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells; American Institute of Physics; Journal of Applied Physics; 113; 9; 3-2013; 935131-935138
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/112654
identifier_str_mv Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; et al.; Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells; American Institute of Physics; Journal of Applied Physics; 113; 9; 3-2013; 935131-935138
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/abs/10.1063/1.4793587?ver=pdfcov&journalCode=jap
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4793587
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846782366739070976
score 12.982451

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