Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
- Autores
- Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; Dunin-Borkowski, R.E.
- Año de publicación
- 2013
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.
Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Van Aken, B.B.. No especifíca;
Fil: Soppe, W.J.. No especifíca;
Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania - Materia
-
EELS
celdas solares
plasmon - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/112654
Ver los metadatos del registro completo
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Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cellsDuchamp, M.Boothroyd, C.B.Moreno, Mario Sergio JesusVan Aken, B.B.Soppe, W.J.Dunin-Borkowski, R.E.EELSceldas solaresplasmonhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Van Aken, B.B.. No especifíca;Fil: Soppe, W.J.. No especifíca;Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaAmerican Institute of Physics2013-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/112654Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; et al.; Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells; American Institute of Physics; Journal of Applied Physics; 113; 9; 3-2013; 935131-9351380021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/abs/10.1063/1.4793587?ver=pdfcov&journalCode=japinfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4793587info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:30:19Zoai:ri.conicet.gov.ar:11336/112654instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:30:19.972CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
title |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
spellingShingle |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells Duchamp, M. EELS celdas solares plasmon |
title_short |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
title_full |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
title_fullStr |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
title_full_unstemmed |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
title_sort |
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
dc.creator.none.fl_str_mv |
Duchamp, M. Boothroyd, C.B. Moreno, Mario Sergio Jesus Van Aken, B.B. Soppe, W.J. Dunin-Borkowski, R.E. |
author |
Duchamp, M. |
author_facet |
Duchamp, M. Boothroyd, C.B. Moreno, Mario Sergio Jesus Van Aken, B.B. Soppe, W.J. Dunin-Borkowski, R.E. |
author_role |
author |
author2 |
Boothroyd, C.B. Moreno, Mario Sergio Jesus Van Aken, B.B. Soppe, W.J. Dunin-Borkowski, R.E. |
author2_role |
author author author author author |
dc.subject.none.fl_str_mv |
EELS celdas solares plasmon |
topic |
EELS celdas solares plasmon |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers. Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania Fil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania Fil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina Fil: Van Aken, B.B.. No especifíca; Fil: Soppe, W.J.. No especifíca; Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania |
description |
Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers. |
publishDate |
2013 |
dc.date.none.fl_str_mv |
2013-03 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/112654 Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; et al.; Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells; American Institute of Physics; Journal of Applied Physics; 113; 9; 3-2013; 935131-935138 0021-8979 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/112654 |
identifier_str_mv |
Duchamp, M.; Boothroyd, C.B.; Moreno, Mario Sergio Jesus; Van Aken, B.B.; Soppe, W.J.; et al.; Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells; American Institute of Physics; Journal of Applied Physics; 113; 9; 3-2013; 935131-935138 0021-8979 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/abs/10.1063/1.4793587?ver=pdfcov&journalCode=jap info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4793587 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844614311596523520 |
score |
13.070432 |