Bismuth doping of hydrogenated amorphous germanium thin films

Autores
Burmeister, F; Comedi, David Mario; Chambouleyron, I.
Año de publicación
2006
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed.
Fil: Burmeister, F. Uppsala University; Suecia. Universidade Estadual de Campinas; Brasil
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Chambouleyron, I.. Universidade Estadual de Campinas; Brasil
Materia
Doping
Amorphous germanium
Bismuth
Fermi level
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/85674
Acceder
id CONICETDig_bfaf949ec30ddf59aaf1071346dacd13
oai_identifier_str oai:ri.conicet.gov.ar:11336/85674
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Bismuth doping of hydrogenated amorphous germanium thin filmsBurmeister, FComedi, David MarioChambouleyron, I.DopingAmorphous germaniumBismuthFermi levelhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed.Fil: Burmeister, F. Uppsala University; Suecia. Universidade Estadual de Campinas; BrasilFil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaFil: Chambouleyron, I.. Universidade Estadual de Campinas; BrasilElsevier Science Sa2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85674Burmeister, F; Comedi, David Mario; Chambouleyron, I.; Bismuth doping of hydrogenated amorphous germanium thin films; Elsevier Science Sa; Thin Solid Films; 515; 4; 12-2006; 2442-24460040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2006.06.021info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609006007772?via%3Dihubinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:24:30Zoai:ri.conicet.gov.ar:11336/85674instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:24:30.495CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Bismuth doping of hydrogenated amorphous germanium thin films
title Bismuth doping of hydrogenated amorphous germanium thin films
spellingShingle Bismuth doping of hydrogenated amorphous germanium thin films
Burmeister, F
Doping
Amorphous germanium
Bismuth
Fermi level
title_short Bismuth doping of hydrogenated amorphous germanium thin films
title_full Bismuth doping of hydrogenated amorphous germanium thin films
title_fullStr Bismuth doping of hydrogenated amorphous germanium thin films
title_full_unstemmed Bismuth doping of hydrogenated amorphous germanium thin films
title_sort Bismuth doping of hydrogenated amorphous germanium thin films
dc.creator.none.fl_str_mv Burmeister, F
Comedi, David Mario
Chambouleyron, I.
author Burmeister, F
author_facet Burmeister, F
Comedi, David Mario
Chambouleyron, I.
author_role author
author2 Comedi, David Mario
Chambouleyron, I.
author2_role author
author
dc.subject.none.fl_str_mv Doping
Amorphous germanium
Bismuth
Fermi level
topic Doping
Amorphous germanium
Bismuth
Fermi level
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed.
Fil: Burmeister, F. Uppsala University; Suecia. Universidade Estadual de Campinas; Brasil
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Chambouleyron, I.. Universidade Estadual de Campinas; Brasil
description The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed.
publishDate 2006
dc.date.none.fl_str_mv 2006-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/85674
Burmeister, F; Comedi, David Mario; Chambouleyron, I.; Bismuth doping of hydrogenated amorphous germanium thin films; Elsevier Science Sa; Thin Solid Films; 515; 4; 12-2006; 2442-2446
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/85674
identifier_str_mv Burmeister, F; Comedi, David Mario; Chambouleyron, I.; Bismuth doping of hydrogenated amorphous germanium thin films; Elsevier Science Sa; Thin Solid Films; 515; 4; 12-2006; 2442-2446
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2006.06.021
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609006007772?via%3Dihub
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846781784703893504
score 12.982451

Publicaciones similares