Bismuth doping of hydrogenated amorphous germanium thin films
- Autores
- Burmeister, F; Comedi, David Mario; Chambouleyron, I.
- Año de publicación
- 2006
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed.
Fil: Burmeister, F. Uppsala University; Suecia. Universidade Estadual de Campinas; Brasil
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Chambouleyron, I.. Universidade Estadual de Campinas; Brasil - Materia
-
Doping
Amorphous germanium
Bismuth
Fermi level - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/85674
Ver los metadatos del registro completo
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Bismuth doping of hydrogenated amorphous germanium thin filmsBurmeister, FComedi, David MarioChambouleyron, I.DopingAmorphous germaniumBismuthFermi levelhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed.Fil: Burmeister, F. Uppsala University; Suecia. Universidade Estadual de Campinas; BrasilFil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaFil: Chambouleyron, I.. Universidade Estadual de Campinas; BrasilElsevier Science Sa2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85674Burmeister, F; Comedi, David Mario; Chambouleyron, I.; Bismuth doping of hydrogenated amorphous germanium thin films; Elsevier Science Sa; Thin Solid Films; 515; 4; 12-2006; 2442-24460040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2006.06.021info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609006007772?via%3Dihubinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:55:24Zoai:ri.conicet.gov.ar:11336/85674instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:55:25.162CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Bismuth doping of hydrogenated amorphous germanium thin films |
title |
Bismuth doping of hydrogenated amorphous germanium thin films |
spellingShingle |
Bismuth doping of hydrogenated amorphous germanium thin films Burmeister, F Doping Amorphous germanium Bismuth Fermi level |
title_short |
Bismuth doping of hydrogenated amorphous germanium thin films |
title_full |
Bismuth doping of hydrogenated amorphous germanium thin films |
title_fullStr |
Bismuth doping of hydrogenated amorphous germanium thin films |
title_full_unstemmed |
Bismuth doping of hydrogenated amorphous germanium thin films |
title_sort |
Bismuth doping of hydrogenated amorphous germanium thin films |
dc.creator.none.fl_str_mv |
Burmeister, F Comedi, David Mario Chambouleyron, I. |
author |
Burmeister, F |
author_facet |
Burmeister, F Comedi, David Mario Chambouleyron, I. |
author_role |
author |
author2 |
Comedi, David Mario Chambouleyron, I. |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Doping Amorphous germanium Bismuth Fermi level |
topic |
Doping Amorphous germanium Bismuth Fermi level |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed. Fil: Burmeister, F. Uppsala University; Suecia. Universidade Estadual de Campinas; Brasil Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina Fil: Chambouleyron, I.. Universidade Estadual de Campinas; Brasil |
description |
The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces small changes in the dark conductivity of a-Ge:H. For a three orders of magnitude change in impurity concentration the room-temperature conductivity changes by just one order of magnitude. Within this doping range no, or small, changes were measured in the values of the pseudo-gap, the Urbach energy, and the hydrogen content. The Fermi level always remains far from the conduction band edge, shifting by only 0.1 eV for the sample with the largest doping concentration. The main conclusion is that Bi is a very inefficient active donor in a-Ge:H. The likely reasons for such behavior are discussed. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006-12 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/85674 Burmeister, F; Comedi, David Mario; Chambouleyron, I.; Bismuth doping of hydrogenated amorphous germanium thin films; Elsevier Science Sa; Thin Solid Films; 515; 4; 12-2006; 2442-2446 0040-6090 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/85674 |
identifier_str_mv |
Burmeister, F; Comedi, David Mario; Chambouleyron, I.; Bismuth doping of hydrogenated amorphous germanium thin films; Elsevier Science Sa; Thin Solid Films; 515; 4; 12-2006; 2442-2446 0040-6090 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2006.06.021 info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609006007772?via%3Dihub |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science Sa |
publisher.none.fl_str_mv |
Elsevier Science Sa |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613670525468672 |
score |
13.070432 |