Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films

Autores
Dussan, A.; Koropecki, Roberto Roman
Año de publicación
2007
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, a series of boron doped microcrystalline silicon films (µc-Si:H (B)) were deposited by plasma-enhanced chemical vapor deposition (PECVD), using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 was varied in the range of 0–100 ppm. The microstructure and morphology of samples were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. A trend towards increasing crystalline volume fraction and grain size were observed as boron concentration in the samples increased; while the XRD spectra show that the peak intensity at 2? ˜ 47° decreases and becomes gradually amorphous with the increasing degree of doping. The doped microcrystalline silicon films presented a crystallographic preferential orientation in the plane (220). Correlations between structural and electric properties were also studied.
Fil: Dussan, A.. Universidad Nacional de Colombia; Colombia
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Microcrystalline Silicon
Boron Doping
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/22656
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/22656
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin filmsDussan, A.Koropecki, Roberto RomanMicrocrystalline SiliconBoron Dopinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, a series of boron doped microcrystalline silicon films (µc-Si:H (B)) were deposited by plasma-enhanced chemical vapor deposition (PECVD), using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 was varied in the range of 0–100 ppm. The microstructure and morphology of samples were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. A trend towards increasing crystalline volume fraction and grain size were observed as boron concentration in the samples increased; while the XRD spectra show that the peak intensity at 2? ˜ 47° decreases and becomes gradually amorphous with the increasing degree of doping. The doped microcrystalline silicon films presented a crystallographic preferential orientation in the plane (220). Correlations between structural and electric properties were also studied.Fil: Dussan, A.. Universidad Nacional de Colombia; ColombiaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaWiley VCH Verlag2007-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/22656Dussan, A.; Koropecki, Roberto Roman; Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films; Wiley VCH Verlag; Physica Status Solidi (C); 4; 11; 12-2007; 4134-41381610-1642CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.200675915info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssc.200675915/abstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:10:10Zoai:ri.conicet.gov.ar:11336/22656instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:10:10.42CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
title Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
spellingShingle Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
Dussan, A.
Microcrystalline Silicon
Boron Doping
title_short Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
title_full Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
title_fullStr Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
title_full_unstemmed Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
title_sort Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films
dc.creator.none.fl_str_mv Dussan, A.
Koropecki, Roberto Roman
author Dussan, A.
author_facet Dussan, A.
Koropecki, Roberto Roman
author_role author
author2 Koropecki, Roberto Roman
author2_role author
dc.subject.none.fl_str_mv Microcrystalline Silicon
Boron Doping
topic Microcrystalline Silicon
Boron Doping
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, a series of boron doped microcrystalline silicon films (µc-Si:H (B)) were deposited by plasma-enhanced chemical vapor deposition (PECVD), using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 was varied in the range of 0–100 ppm. The microstructure and morphology of samples were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. A trend towards increasing crystalline volume fraction and grain size were observed as boron concentration in the samples increased; while the XRD spectra show that the peak intensity at 2? ˜ 47° decreases and becomes gradually amorphous with the increasing degree of doping. The doped microcrystalline silicon films presented a crystallographic preferential orientation in the plane (220). Correlations between structural and electric properties were also studied.
Fil: Dussan, A.. Universidad Nacional de Colombia; Colombia
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description In this work, a series of boron doped microcrystalline silicon films (µc-Si:H (B)) were deposited by plasma-enhanced chemical vapor deposition (PECVD), using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 was varied in the range of 0–100 ppm. The microstructure and morphology of samples were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. A trend towards increasing crystalline volume fraction and grain size were observed as boron concentration in the samples increased; while the XRD spectra show that the peak intensity at 2? ˜ 47° decreases and becomes gradually amorphous with the increasing degree of doping. The doped microcrystalline silicon films presented a crystallographic preferential orientation in the plane (220). Correlations between structural and electric properties were also studied.
publishDate 2007
dc.date.none.fl_str_mv 2007-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/22656
Dussan, A.; Koropecki, Roberto Roman; Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films; Wiley VCH Verlag; Physica Status Solidi (C); 4; 11; 12-2007; 4134-4138
1610-1642
CONICET Digital
CONICET
url http://hdl.handle.net/11336/22656
identifier_str_mv Dussan, A.; Koropecki, Roberto Roman; Effect of boron on the microstructure of hydrogenated microcrystalline silicon thin films; Wiley VCH Verlag; Physica Status Solidi (C); 4; 11; 12-2007; 4134-4138
1610-1642
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.200675915
info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssc.200675915/abstract
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley VCH Verlag
publisher.none.fl_str_mv Wiley VCH Verlag
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842270109121380352
score 13.13397

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