Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques

Autores
Longeaud, C.; Ventosinos, Federico; Schmidt, Javier Alejandro
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport parameters of this material. We insist mainly on two techniques in which one records a photocurrent resulting from the movement of an interference grating onto a sample. We describe the experimental set-ups and provide a theoretical explanation of the observed behaviors of these photocurrents. We demonstrate that a density of state spectroscopy can be done with these techniques. Additionally, comparing this spectroscopy to that performed with modulated photocurrent experiment, we show that it is possible to derive a good order of magnitude estimate of the electron capture coefficient of the conduction band tail states as well as the electronic extended states mobility. The derived parameters are compared with previous results. © 2012 American Institute of Physics.
Fil: Longeaud, C.. Laboratoire de Génie Electrique Et Electronique de Paris; Francia
Fil: Ventosinos, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
PHOTOCONDUCTIVITY
DENSITY OF STATES
HYDROGENATED AMORPHOUS SILICON
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/150155
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/150155
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniquesLongeaud, C.Ventosinos, FedericoSchmidt, Javier AlejandroPHOTOCONDUCTIVITYDENSITY OF STATESHYDROGENATED AMORPHOUS SILICONhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1https://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2In this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport parameters of this material. We insist mainly on two techniques in which one records a photocurrent resulting from the movement of an interference grating onto a sample. We describe the experimental set-ups and provide a theoretical explanation of the observed behaviors of these photocurrents. We demonstrate that a density of state spectroscopy can be done with these techniques. Additionally, comparing this spectroscopy to that performed with modulated photocurrent experiment, we show that it is possible to derive a good order of magnitude estimate of the electron capture coefficient of the conduction band tail states as well as the electronic extended states mobility. The derived parameters are compared with previous results. © 2012 American Institute of Physics.Fil: Longeaud, C.. Laboratoire de Génie Electrique Et Electronique de Paris; FranciaFil: Ventosinos, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaAmerican Institute of Physics2012-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/150155Longeaud, C.; Ventosinos, Federico; Schmidt, Javier Alejandro; Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques; American Institute of Physics; Journal of Applied Physics; 112; 2; 7-2012; 237091-23709100021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4737790info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:38:47Zoai:ri.conicet.gov.ar:11336/150155instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:38:47.519CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
title Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
spellingShingle Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
Longeaud, C.
PHOTOCONDUCTIVITY
DENSITY OF STATES
HYDROGENATED AMORPHOUS SILICON
title_short Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
title_full Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
title_fullStr Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
title_full_unstemmed Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
title_sort Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
dc.creator.none.fl_str_mv Longeaud, C.
Ventosinos, Federico
Schmidt, Javier Alejandro
author Longeaud, C.
author_facet Longeaud, C.
Ventosinos, Federico
Schmidt, Javier Alejandro
author_role author
author2 Ventosinos, Federico
Schmidt, Javier Alejandro
author2_role author
author
dc.subject.none.fl_str_mv PHOTOCONDUCTIVITY
DENSITY OF STATES
HYDROGENATED AMORPHOUS SILICON
topic PHOTOCONDUCTIVITY
DENSITY OF STATES
HYDROGENATED AMORPHOUS SILICON
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport parameters of this material. We insist mainly on two techniques in which one records a photocurrent resulting from the movement of an interference grating onto a sample. We describe the experimental set-ups and provide a theoretical explanation of the observed behaviors of these photocurrents. We demonstrate that a density of state spectroscopy can be done with these techniques. Additionally, comparing this spectroscopy to that performed with modulated photocurrent experiment, we show that it is possible to derive a good order of magnitude estimate of the electron capture coefficient of the conduction band tail states as well as the electronic extended states mobility. The derived parameters are compared with previous results. © 2012 American Institute of Physics.
Fil: Longeaud, C.. Laboratoire de Génie Electrique Et Electronique de Paris; Francia
Fil: Ventosinos, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description In this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport parameters of this material. We insist mainly on two techniques in which one records a photocurrent resulting from the movement of an interference grating onto a sample. We describe the experimental set-ups and provide a theoretical explanation of the observed behaviors of these photocurrents. We demonstrate that a density of state spectroscopy can be done with these techniques. Additionally, comparing this spectroscopy to that performed with modulated photocurrent experiment, we show that it is possible to derive a good order of magnitude estimate of the electron capture coefficient of the conduction band tail states as well as the electronic extended states mobility. The derived parameters are compared with previous results. © 2012 American Institute of Physics.
publishDate 2012
dc.date.none.fl_str_mv 2012-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/150155
Longeaud, C.; Ventosinos, Federico; Schmidt, Javier Alejandro; Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques; American Institute of Physics; Journal of Applied Physics; 112; 2; 7-2012; 237091-2370910
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/150155
identifier_str_mv Longeaud, C.; Ventosinos, Federico; Schmidt, Javier Alejandro; Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques; American Institute of Physics; Journal of Applied Physics; 112; 2; 7-2012; 237091-2370910
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4737790
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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