Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

Autores
Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo Javier; Nakamura, Yoshinobu; Takagi, Hidenori
Año de publicación
2008
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect. © 2008 The Japan Society of Applied Physics.
Fil: Fujiwara, Kohei. University Of Tokyo; Japón
Fil: Nemoto, Takumi. University Of Tokyo; Japón
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Nakamura, Yoshinobu. University Of Tokyo; Japón
Fil: Takagi, Hidenori. University Of Tokyo; Japón
Materia
Cuo
Dielectric Breakdown
Memory Effect
Reduction-Oxidation
Reram
Resistance Switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/61544
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/61544
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devicesFujiwara, KoheiNemoto, TakumiRozenberg, Marcelo JavierNakamura, YoshinobuTakagi, HidenoriCuoDielectric BreakdownMemory EffectReduction-OxidationReramResistance Switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect. © 2008 The Japan Society of Applied Physics.Fil: Fujiwara, Kohei. University Of Tokyo; JapónFil: Nemoto, Takumi. University Of Tokyo; JapónFil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Nakamura, Yoshinobu. University Of Tokyo; JapónFil: Takagi, Hidenori. University Of Tokyo; JapónJapan Society Applied Physics2008-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/61544Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo Javier; Nakamura, Yoshinobu; Takagi, Hidenori; Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices; Japan Society Applied Physics; Japanese Journal Of Applied Physics; 47; 8 PART 1; 12-2008; 6266-62710021-4922CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1143/JJAP.47.6266info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-17T11:19:17Zoai:ri.conicet.gov.ar:11336/61544instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-17 11:19:17.677CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
title Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
spellingShingle Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
Fujiwara, Kohei
Cuo
Dielectric Breakdown
Memory Effect
Reduction-Oxidation
Reram
Resistance Switching
title_short Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
title_full Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
title_fullStr Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
title_full_unstemmed Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
title_sort Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
dc.creator.none.fl_str_mv Fujiwara, Kohei
Nemoto, Takumi
Rozenberg, Marcelo Javier
Nakamura, Yoshinobu
Takagi, Hidenori
author Fujiwara, Kohei
author_facet Fujiwara, Kohei
Nemoto, Takumi
Rozenberg, Marcelo Javier
Nakamura, Yoshinobu
Takagi, Hidenori
author_role author
author2 Nemoto, Takumi
Rozenberg, Marcelo Javier
Nakamura, Yoshinobu
Takagi, Hidenori
author2_role author
author
author
author
dc.subject.none.fl_str_mv Cuo
Dielectric Breakdown
Memory Effect
Reduction-Oxidation
Reram
Resistance Switching
topic Cuo
Dielectric Breakdown
Memory Effect
Reduction-Oxidation
Reram
Resistance Switching
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect. © 2008 The Japan Society of Applied Physics.
Fil: Fujiwara, Kohei. University Of Tokyo; Japón
Fil: Nemoto, Takumi. University Of Tokyo; Japón
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Nakamura, Yoshinobu. University Of Tokyo; Japón
Fil: Takagi, Hidenori. University Of Tokyo; Japón
description The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect. © 2008 The Japan Society of Applied Physics.
publishDate 2008
dc.date.none.fl_str_mv 2008-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/61544
Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo Javier; Nakamura, Yoshinobu; Takagi, Hidenori; Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices; Japan Society Applied Physics; Japanese Journal Of Applied Physics; 47; 8 PART 1; 12-2008; 6266-6271
0021-4922
CONICET Digital
CONICET
url http://hdl.handle.net/11336/61544
identifier_str_mv Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo Javier; Nakamura, Yoshinobu; Takagi, Hidenori; Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices; Japan Society Applied Physics; Japanese Journal Of Applied Physics; 47; 8 PART 1; 12-2008; 6266-6271
0021-4922
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1143/JJAP.47.6266
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Japan Society Applied Physics
publisher.none.fl_str_mv Japan Society Applied Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1843606536880914432
score 13.001348

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