Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices

Autores
Fujiwara, Kohei; Yajima, Takeshi; Nakamura, Yoshinobu; Rozenberg, Marcelo Javier; Takagi, Hidenori
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Control of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitortype stacked device. We argue that the planar-type device might have a certain advantage for future non-volatile memory application.
Fil: Fujiwara, Kohei. University of Tokyo; Japón
Fil: Yajima, Takeshi. University of Tokyo; Japón
Fil: Nakamura, Yoshinobu. University of Tokyo; Japón
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Takagi, Hidenori. University of Tokyo; Japón
Materia
Resistive Switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/60736
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching DevicesFujiwara, KoheiYajima, TakeshiNakamura, YoshinobuRozenberg, Marcelo JavierTakagi, HidenoriResistive Switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Control of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitortype stacked device. We argue that the planar-type device might have a certain advantage for future non-volatile memory application.Fil: Fujiwara, Kohei. University of Tokyo; JapónFil: Yajima, Takeshi. University of Tokyo; JapónFil: Nakamura, Yoshinobu. University of Tokyo; JapónFil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Takagi, Hidenori. University of Tokyo; JapónJapan Society Applied Physics2009-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/60736Fujiwara, Kohei; Yajima, Takeshi; Nakamura, Yoshinobu; Rozenberg, Marcelo Javier; Takagi, Hidenori; Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices; Japan Society Applied Physics; Applied Physics Express; 2; 10-2009; 81401-814081882-0778CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1143/APEX.2.081401info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1143/APEX.2.081401info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:47:13Zoai:ri.conicet.gov.ar:11336/60736instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:47:13.708CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
title Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
spellingShingle Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
Fujiwara, Kohei
Resistive Switching
title_short Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
title_full Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
title_fullStr Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
title_full_unstemmed Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
title_sort Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
dc.creator.none.fl_str_mv Fujiwara, Kohei
Yajima, Takeshi
Nakamura, Yoshinobu
Rozenberg, Marcelo Javier
Takagi, Hidenori
author Fujiwara, Kohei
author_facet Fujiwara, Kohei
Yajima, Takeshi
Nakamura, Yoshinobu
Rozenberg, Marcelo Javier
Takagi, Hidenori
author_role author
author2 Yajima, Takeshi
Nakamura, Yoshinobu
Rozenberg, Marcelo Javier
Takagi, Hidenori
author2_role author
author
author
author
dc.subject.none.fl_str_mv Resistive Switching
topic Resistive Switching
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Control of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitortype stacked device. We argue that the planar-type device might have a certain advantage for future non-volatile memory application.
Fil: Fujiwara, Kohei. University of Tokyo; Japón
Fil: Yajima, Takeshi. University of Tokyo; Japón
Fil: Nakamura, Yoshinobu. University of Tokyo; Japón
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Takagi, Hidenori. University of Tokyo; Japón
description Control of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitortype stacked device. We argue that the planar-type device might have a certain advantage for future non-volatile memory application.
publishDate 2009
dc.date.none.fl_str_mv 2009-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/60736
Fujiwara, Kohei; Yajima, Takeshi; Nakamura, Yoshinobu; Rozenberg, Marcelo Javier; Takagi, Hidenori; Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices; Japan Society Applied Physics; Applied Physics Express; 2; 10-2009; 81401-81408
1882-0778
CONICET Digital
CONICET
url http://hdl.handle.net/11336/60736
identifier_str_mv Fujiwara, Kohei; Yajima, Takeshi; Nakamura, Yoshinobu; Rozenberg, Marcelo Javier; Takagi, Hidenori; Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices; Japan Society Applied Physics; Applied Physics Express; 2; 10-2009; 81401-81408
1882-0778
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1143/APEX.2.081401
info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1143/APEX.2.081401
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Japan Society Applied Physics
publisher.none.fl_str_mv Japan Society Applied Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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