AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

Autores
García Molleja, Javier; Gomez, Bernardo Jose Armando; Ferron, Julio; Gautron, Eric; Burgi, Juan Mauel; Abdallah, Bassam; Djouadi, Mohamed Abdou; Feugeas, Jorge Nestor; Jouan, Pierre-Yves
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.
Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina. Institut des Matériaux Jean Rouxel; Francia
Fil: Gomez, Bernardo Jose Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; Argentina
Fil: Gautron, Eric. Institut des Matériaux Jean Rouxel; Francia
Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Abdallah, Bassam. Institut des Matériaux Jean Rouxel; Francia. Atomic Energy Commission of Syria. Physics Department; Siria
Fil: Djouadi, Mohamed Abdou. Institut des Matériaux Jean Rouxel; Francia
Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Jouan, Pierre-Yves . Institut des Matériaux Jean Rouxel; Francia
Materia
Magnetron Sputtering
Film Growth
Aluminum Nitride
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/4420
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/4420
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growthGarcía Molleja, JavierGomez, Bernardo Jose ArmandoFerron, JulioGautron, EricBurgi, Juan MauelAbdallah, BassamDjouadi, Mohamed AbdouFeugeas, Jorge NestorJouan, Pierre-Yves Magnetron SputteringFilm GrowthAluminum Nitridehttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina. Institut des Matériaux Jean Rouxel; FranciaFil: Gomez, Bernardo Jose Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); ArgentinaFil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; ArgentinaFil: Gautron, Eric. Institut des Matériaux Jean Rouxel; FranciaFil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); ArgentinaFil: Abdallah, Bassam. Institut des Matériaux Jean Rouxel; Francia. Atomic Energy Commission of Syria. Physics Department; SiriaFil: Djouadi, Mohamed Abdou. Institut des Matériaux Jean Rouxel; FranciaFil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); ArgentinaFil: Jouan, Pierre-Yves . Institut des Matériaux Jean Rouxel; FranciaEDP Sciences2013-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/4420García Molleja, Javier; Gomez, Bernardo Jose Armando; Ferron, Julio; Gautron, Eric; Burgi, Juan Mauel; et al.; AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth; EDP Sciences; European Physical Journal Applied Physics; 64; 11-2013; 20302-203021286-0050enginfo:eu-repo/semantics/altIdentifier/url/http://epjap.epj.org/articles/epjap/abs/2013/11/ap130445/ap130445.htmlinfo:eu-repo/semantics/altIdentifier/doi/10.1051/epjap/2013130445info:eu-repo/semantics/altIdentifier/issn/1286-0050info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:38:20Zoai:ri.conicet.gov.ar:11336/4420instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:38:21.186CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
title AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
spellingShingle AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
García Molleja, Javier
Magnetron Sputtering
Film Growth
Aluminum Nitride
title_short AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
title_full AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
title_fullStr AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
title_full_unstemmed AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
title_sort AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
dc.creator.none.fl_str_mv García Molleja, Javier
Gomez, Bernardo Jose Armando
Ferron, Julio
Gautron, Eric
Burgi, Juan Mauel
Abdallah, Bassam
Djouadi, Mohamed Abdou
Feugeas, Jorge Nestor
Jouan, Pierre-Yves
author García Molleja, Javier
author_facet García Molleja, Javier
Gomez, Bernardo Jose Armando
Ferron, Julio
Gautron, Eric
Burgi, Juan Mauel
Abdallah, Bassam
Djouadi, Mohamed Abdou
Feugeas, Jorge Nestor
Jouan, Pierre-Yves
author_role author
author2 Gomez, Bernardo Jose Armando
Ferron, Julio
Gautron, Eric
Burgi, Juan Mauel
Abdallah, Bassam
Djouadi, Mohamed Abdou
Feugeas, Jorge Nestor
Jouan, Pierre-Yves
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Magnetron Sputtering
Film Growth
Aluminum Nitride
topic Magnetron Sputtering
Film Growth
Aluminum Nitride
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.
Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina. Institut des Matériaux Jean Rouxel; Francia
Fil: Gomez, Bernardo Jose Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; Argentina
Fil: Gautron, Eric. Institut des Matériaux Jean Rouxel; Francia
Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Abdallah, Bassam. Institut des Matériaux Jean Rouxel; Francia. Atomic Energy Commission of Syria. Physics Department; Siria
Fil: Djouadi, Mohamed Abdou. Institut des Matériaux Jean Rouxel; Francia
Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Jouan, Pierre-Yves . Institut des Matériaux Jean Rouxel; Francia
description Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.
publishDate 2013
dc.date.none.fl_str_mv 2013-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/4420
García Molleja, Javier; Gomez, Bernardo Jose Armando; Ferron, Julio; Gautron, Eric; Burgi, Juan Mauel; et al.; AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth; EDP Sciences; European Physical Journal Applied Physics; 64; 11-2013; 20302-20302
1286-0050
url http://hdl.handle.net/11336/4420
identifier_str_mv García Molleja, Javier; Gomez, Bernardo Jose Armando; Ferron, Julio; Gautron, Eric; Burgi, Juan Mauel; et al.; AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth; EDP Sciences; European Physical Journal Applied Physics; 64; 11-2013; 20302-20302
1286-0050
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://epjap.epj.org/articles/epjap/abs/2013/11/ap130445/ap130445.html
info:eu-repo/semantics/altIdentifier/doi/10.1051/epjap/2013130445
info:eu-repo/semantics/altIdentifier/issn/1286-0050
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv EDP Sciences
publisher.none.fl_str_mv EDP Sciences
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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