Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron

Autores
Macchi, Carlos Eugenio; Burgi, Juan Mauel; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; Bemporad, Edoardo; Feugeas, Jorge Nestor; Sennen Brusa, Roberto; Somoza, Alberto Horacio
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.
Fil: Macchi, Carlos Eugenio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina
Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Mariazzi, Sebastiano. Universitá di Trento. Dipartimento di Fisica; Italia
Fil: Piccoli, Mattia. Universitá di Roma Tre. Dipartimento di Ingegneria Meccanica ed Industriale; Italia
Fil: Bemporad, Edoardo. Universitá di Roma Tre. Dipartimento di Ingegneria Meccanica ed Industriale; Italia
Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Sennen Brusa, Roberto. Universitá di Trento. Dipartimento di Fisica; Italia
Fil: Somoza, Alberto Horacio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; Argentina
Materia
Aluminum Nitride
Films
Reactive Sputter Magnetron
Positron Annihilation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/4605
Acceder
id CONICETDig_53791c6715d6b448ea56cd1419696ee0
oai_identifier_str oai:ri.conicet.gov.ar:11336/4605
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetronMacchi, Carlos EugenioBurgi, Juan MauelGarcía Molleja, JavierMariazzi, SebastianoPiccoli, MattiaBemporad, EdoardoFeugeas, Jorge NestorSennen Brusa, RobertoSomoza, Alberto HoracioAluminum NitrideFilmsReactive Sputter MagnetronPositron Annihilationhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.Fil: Macchi, Carlos Eugenio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; ArgentinaFil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); ArgentinaFil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); ArgentinaFil: Mariazzi, Sebastiano. Universitá di Trento. Dipartimento di Fisica; ItaliaFil: Piccoli, Mattia. Universitá di Roma Tre. Dipartimento di Ingegneria Meccanica ed Industriale; ItaliaFil: Bemporad, Edoardo. Universitá di Roma Tre. Dipartimento di Ingegneria Meccanica ed Industriale; ItaliaFil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); ArgentinaFil: Sennen Brusa, Roberto. Universitá di Trento. Dipartimento di Fisica; ItaliaFil: Somoza, Alberto Horacio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; ArgentinaEDP Sciences2014-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/4605Macchi, Carlos Eugenio; Burgi, Juan Mauel; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; et al.; Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron; EDP Sciences; European Physical Journal Applied Physics; 67; 2; 8-2014; 21301-213011951-6355enginfo:eu-repo/semantics/altIdentifier/url/http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=9314113&fileId=S1286004214501917info:eu-repo/semantics/altIdentifier/doi/10.1051/epjap/2014140191info:eu-repo/semantics/altIdentifier/issn/1951-6355info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:08:27Zoai:ri.conicet.gov.ar:11336/4605instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:08:28.236CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
title Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
spellingShingle Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
Macchi, Carlos Eugenio
Aluminum Nitride
Films
Reactive Sputter Magnetron
Positron Annihilation
title_short Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
title_full Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
title_fullStr Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
title_full_unstemmed Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
title_sort Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
dc.creator.none.fl_str_mv Macchi, Carlos Eugenio
Burgi, Juan Mauel
García Molleja, Javier
Mariazzi, Sebastiano
Piccoli, Mattia
Bemporad, Edoardo
Feugeas, Jorge Nestor
Sennen Brusa, Roberto
Somoza, Alberto Horacio
author Macchi, Carlos Eugenio
author_facet Macchi, Carlos Eugenio
Burgi, Juan Mauel
García Molleja, Javier
Mariazzi, Sebastiano
Piccoli, Mattia
Bemporad, Edoardo
Feugeas, Jorge Nestor
Sennen Brusa, Roberto
Somoza, Alberto Horacio
author_role author
author2 Burgi, Juan Mauel
García Molleja, Javier
Mariazzi, Sebastiano
Piccoli, Mattia
Bemporad, Edoardo
Feugeas, Jorge Nestor
Sennen Brusa, Roberto
Somoza, Alberto Horacio
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Aluminum Nitride
Films
Reactive Sputter Magnetron
Positron Annihilation
topic Aluminum Nitride
Films
Reactive Sputter Magnetron
Positron Annihilation
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.
Fil: Macchi, Carlos Eugenio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina
Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Mariazzi, Sebastiano. Universitá di Trento. Dipartimento di Fisica; Italia
Fil: Piccoli, Mattia. Universitá di Roma Tre. Dipartimento di Ingegneria Meccanica ed Industriale; Italia
Fil: Bemporad, Edoardo. Universitá di Roma Tre. Dipartimento di Ingegneria Meccanica ed Industriale; Italia
Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
Fil: Sennen Brusa, Roberto. Universitá di Trento. Dipartimento di Fisica; Italia
Fil: Somoza, Alberto Horacio. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; Argentina
description It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.
publishDate 2014
dc.date.none.fl_str_mv 2014-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/4605
Macchi, Carlos Eugenio; Burgi, Juan Mauel; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; et al.; Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron; EDP Sciences; European Physical Journal Applied Physics; 67; 2; 8-2014; 21301-21301
1951-6355
url http://hdl.handle.net/11336/4605
identifier_str_mv Macchi, Carlos Eugenio; Burgi, Juan Mauel; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; et al.; Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron; EDP Sciences; European Physical Journal Applied Physics; 67; 2; 8-2014; 21301-21301
1951-6355
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=9314113&fileId=S1286004214501917
info:eu-repo/semantics/altIdentifier/doi/10.1051/epjap/2014140191
info:eu-repo/semantics/altIdentifier/issn/1951-6355
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv EDP Sciences
publisher.none.fl_str_mv EDP Sciences
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613952338657280
score 13.070432

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