Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

Autores
Giannetta, Hernan; Calaza, Carlos; Lamas, Diego Germán; Fonseca, Luis; Fraigi, Liliana
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The present study investigates the main electrical transport mechanism in V2O5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V2O5 target and then oxidized at high temperature under air atmosphere to obtain the desired V2O5 phase. The dependence of the electrical conductivity of the V2O5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy WH = 0.1682 eV, with a structural disorder energy WD = 0.2241 eV and an optical phonon frequency ν0 = 0.468 × 1013s- 1. These results are in agreement with data reported in literature for single crystal V2O5. However, the carrier mobility μ = 1.5019 × 10- 5 cm2/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron-phonon coupling in the V2O5 thin films obtained with the proposed deposition method.
Fil: Giannetta, Hernan. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina. Instituto Nacional de Tecnología Agropecuaria. Centro Regional Buenos Aires Norte; Argentina
Fil: Calaza, Carlos. Consejo Superior de Investigaciones Científicas; España
Fil: Lamas, Diego Germán. Universidad Nacional del Comahue. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas; Argentina
Fil: Fonseca, Luis. Consejo Superior de Investigaciones Científicas; España
Fil: Fraigi, Liliana. Instituto Nacional de Tecnología Agropecuaria. Centro Regional Buenos Aires Norte; Argentina. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina
Materia
Rf Magnetron Sputtering
Small Polaron Hopping
Thin Solid Films
V2o5 Thin Film
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/38519
Acceder
id CONICETDig_368a231a2789a45c6444f48e2ae9cca1
oai_identifier_str oai:ri.conicet.gov.ar:11336/38519
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperatureGiannetta, HernanCalaza, CarlosLamas, Diego GermánFonseca, LuisFraigi, LilianaRf Magnetron SputteringSmall Polaron HoppingThin Solid FilmsV2o5 Thin Filmhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2The present study investigates the main electrical transport mechanism in V2O5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V2O5 target and then oxidized at high temperature under air atmosphere to obtain the desired V2O5 phase. The dependence of the electrical conductivity of the V2O5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy WH = 0.1682 eV, with a structural disorder energy WD = 0.2241 eV and an optical phonon frequency ν0 = 0.468 × 1013s- 1. These results are in agreement with data reported in literature for single crystal V2O5. However, the carrier mobility μ = 1.5019 × 10- 5 cm2/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron-phonon coupling in the V2O5 thin films obtained with the proposed deposition method.Fil: Giannetta, Hernan. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina. Instituto Nacional de Tecnología Agropecuaria. Centro Regional Buenos Aires Norte; ArgentinaFil: Calaza, Carlos. Consejo Superior de Investigaciones Científicas; EspañaFil: Lamas, Diego Germán. Universidad Nacional del Comahue. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas; ArgentinaFil: Fonseca, Luis. Consejo Superior de Investigaciones Científicas; EspañaFil: Fraigi, Liliana. Instituto Nacional de Tecnología Agropecuaria. Centro Regional Buenos Aires Norte; Argentina. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; ArgentinaElsevier Science Sa2015-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/38519Giannetta, Hernan; Calaza, Carlos; Lamas, Diego Germán; Fonseca, Luis; Fraigi, Liliana; Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature; Elsevier Science Sa; Thin Solid Films; 589; 8-2015; 730-7340040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2015.06.048info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609015006550info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:32:35Zoai:ri.conicet.gov.ar:11336/38519instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:32:35.459CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
title Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
spellingShingle Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
Giannetta, Hernan
Rf Magnetron Sputtering
Small Polaron Hopping
Thin Solid Films
V2o5 Thin Film
title_short Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
title_full Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
title_fullStr Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
title_full_unstemmed Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
title_sort Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
dc.creator.none.fl_str_mv Giannetta, Hernan
Calaza, Carlos
Lamas, Diego Germán
Fonseca, Luis
Fraigi, Liliana
author Giannetta, Hernan
author_facet Giannetta, Hernan
Calaza, Carlos
Lamas, Diego Germán
Fonseca, Luis
Fraigi, Liliana
author_role author
author2 Calaza, Carlos
Lamas, Diego Germán
Fonseca, Luis
Fraigi, Liliana
author2_role author
author
author
author
dc.subject.none.fl_str_mv Rf Magnetron Sputtering
Small Polaron Hopping
Thin Solid Films
V2o5 Thin Film
topic Rf Magnetron Sputtering
Small Polaron Hopping
Thin Solid Films
V2o5 Thin Film
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The present study investigates the main electrical transport mechanism in V2O5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V2O5 target and then oxidized at high temperature under air atmosphere to obtain the desired V2O5 phase. The dependence of the electrical conductivity of the V2O5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy WH = 0.1682 eV, with a structural disorder energy WD = 0.2241 eV and an optical phonon frequency ν0 = 0.468 × 1013s- 1. These results are in agreement with data reported in literature for single crystal V2O5. However, the carrier mobility μ = 1.5019 × 10- 5 cm2/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron-phonon coupling in the V2O5 thin films obtained with the proposed deposition method.
Fil: Giannetta, Hernan. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina. Instituto Nacional de Tecnología Agropecuaria. Centro Regional Buenos Aires Norte; Argentina
Fil: Calaza, Carlos. Consejo Superior de Investigaciones Científicas; España
Fil: Lamas, Diego Germán. Universidad Nacional del Comahue. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas; Argentina
Fil: Fonseca, Luis. Consejo Superior de Investigaciones Científicas; España
Fil: Fraigi, Liliana. Instituto Nacional de Tecnología Agropecuaria. Centro Regional Buenos Aires Norte; Argentina. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina
description The present study investigates the main electrical transport mechanism in V2O5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V2O5 target and then oxidized at high temperature under air atmosphere to obtain the desired V2O5 phase. The dependence of the electrical conductivity of the V2O5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy WH = 0.1682 eV, with a structural disorder energy WD = 0.2241 eV and an optical phonon frequency ν0 = 0.468 × 1013s- 1. These results are in agreement with data reported in literature for single crystal V2O5. However, the carrier mobility μ = 1.5019 × 10- 5 cm2/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron-phonon coupling in the V2O5 thin films obtained with the proposed deposition method.
publishDate 2015
dc.date.none.fl_str_mv 2015-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/38519
Giannetta, Hernan; Calaza, Carlos; Lamas, Diego Germán; Fonseca, Luis; Fraigi, Liliana; Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature; Elsevier Science Sa; Thin Solid Films; 589; 8-2015; 730-734
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/38519
identifier_str_mv Giannetta, Hernan; Calaza, Carlos; Lamas, Diego Germán; Fonseca, Luis; Fraigi, Liliana; Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature; Elsevier Science Sa; Thin Solid Films; 589; 8-2015; 730-734
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2015.06.048
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609015006550
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614339620765696
score 13.070432

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