Tang, K., Palumbo, F. R. M., Zhang, L., Droopad, R., & McIntyre, P. C. (2017). Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. Web
Citación estilo ChicagoTang, Kechao, Félix Roberto Mario Palumbo, Liangliang Zhang, Ravi Droopad, and Paul C. McIntyre. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. 2017.
Cita MLATang, Kechao, et al. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. 2017.
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