Characterization of thin polycrystalline silicon films deposited on glass by CVD

Autores
Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Bhaduri, A.; Longeaud, C.; Schmidt, Javier Alejandro
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.
Fil: Benvenuto, Ariel Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Bhaduri, A.. Laboratoire Génie Électrique Et Électronique de Paris;
Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Polycrystalline Silicon
Electrical Properties
Raman Spectroscopy
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/76424
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Characterization of thin polycrystalline silicon films deposited on glass by CVDBenvenuto, Ariel GastónBuitrago, Roman HoracioBhaduri, A.Longeaud, C.Schmidt, Javier AlejandroPolycrystalline SiliconElectrical PropertiesRaman Spectroscopyhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1https://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.Fil: Benvenuto, Ariel Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Bhaduri, A.. Laboratoire Génie Électrique Et Électronique de Paris;Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaIOP Publishing2012-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/76424Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Bhaduri, A.; Longeaud, C.; Schmidt, Javier Alejandro; Characterization of thin polycrystalline silicon films deposited on glass by CVD; IOP Publishing; Semiconductor Science And Technology; 27; 12; 12-2012; 125013-1/50268-1242CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/27/12/125013info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:05:32Zoai:ri.conicet.gov.ar:11336/76424instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:05:32.534CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characterization of thin polycrystalline silicon films deposited on glass by CVD
title Characterization of thin polycrystalline silicon films deposited on glass by CVD
spellingShingle Characterization of thin polycrystalline silicon films deposited on glass by CVD
Benvenuto, Ariel Gastón
Polycrystalline Silicon
Electrical Properties
Raman Spectroscopy
title_short Characterization of thin polycrystalline silicon films deposited on glass by CVD
title_full Characterization of thin polycrystalline silicon films deposited on glass by CVD
title_fullStr Characterization of thin polycrystalline silicon films deposited on glass by CVD
title_full_unstemmed Characterization of thin polycrystalline silicon films deposited on glass by CVD
title_sort Characterization of thin polycrystalline silicon films deposited on glass by CVD
dc.creator.none.fl_str_mv Benvenuto, Ariel Gastón
Buitrago, Roman Horacio
Bhaduri, A.
Longeaud, C.
Schmidt, Javier Alejandro
author Benvenuto, Ariel Gastón
author_facet Benvenuto, Ariel Gastón
Buitrago, Roman Horacio
Bhaduri, A.
Longeaud, C.
Schmidt, Javier Alejandro
author_role author
author2 Buitrago, Roman Horacio
Bhaduri, A.
Longeaud, C.
Schmidt, Javier Alejandro
author2_role author
author
author
author
dc.subject.none.fl_str_mv Polycrystalline Silicon
Electrical Properties
Raman Spectroscopy
topic Polycrystalline Silicon
Electrical Properties
Raman Spectroscopy
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.
Fil: Benvenuto, Ariel Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Bhaduri, A.. Laboratoire Génie Électrique Et Électronique de Paris;
Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties.
publishDate 2012
dc.date.none.fl_str_mv 2012-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/76424
Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Bhaduri, A.; Longeaud, C.; Schmidt, Javier Alejandro; Characterization of thin polycrystalline silicon films deposited on glass by CVD; IOP Publishing; Semiconductor Science And Technology; 27; 12; 12-2012; 125013-1/5
0268-1242
CONICET Digital
CONICET
url http://hdl.handle.net/11336/76424
identifier_str_mv Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Bhaduri, A.; Longeaud, C.; Schmidt, Javier Alejandro; Characterization of thin polycrystalline silicon films deposited on glass by CVD; IOP Publishing; Semiconductor Science And Technology; 27; 12; 12-2012; 125013-1/5
0268-1242
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/27/12/125013
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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