Internal Strain Distribution in Freestanding Porous Silicon

Autores
Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio; Koropecki, Roberto Roman; Comedi, David Mario
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.
Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil
Fil: Rodrigues, D. A.. Universidade Federal do Sao Carlos; Brasil
Fil: Galzerani, J. C.. Universidade Federal do Sao Carlos; Brasil
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
Porous Silicon
Raman Spectroscopy
Elastic Properties
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/26088
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Internal Strain Distribution in Freestanding Porous SiliconPusep, Y. A.Rodrigues, D. A.Galzerani, J. C.Arce, Roberto DelioKoropecki, Roberto RomanComedi, David MarioPorous SiliconRaman SpectroscopyElastic Propertieshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.Fil: Pusep, Y. A.. Universidade de Sao Paulo; BrasilFil: Rodrigues, D. A.. Universidade Federal do Sao Carlos; BrasilFil: Galzerani, J. C.. Universidade Federal do Sao Carlos; BrasilFil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaElectrochemical Society2009-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/26088Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio; Koropecki, Roberto Roman; et al.; Internal Strain Distribution in Freestanding Porous Silicon; Electrochemical Society; Journal of the Electrochemical Society; 156; 12; 12-2009; 215-2170013-4651CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1149/1.3225832info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:25:16Zoai:ri.conicet.gov.ar:11336/26088instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:25:16.809CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Internal Strain Distribution in Freestanding Porous Silicon
title Internal Strain Distribution in Freestanding Porous Silicon
spellingShingle Internal Strain Distribution in Freestanding Porous Silicon
Pusep, Y. A.
Porous Silicon
Raman Spectroscopy
Elastic Properties
title_short Internal Strain Distribution in Freestanding Porous Silicon
title_full Internal Strain Distribution in Freestanding Porous Silicon
title_fullStr Internal Strain Distribution in Freestanding Porous Silicon
title_full_unstemmed Internal Strain Distribution in Freestanding Porous Silicon
title_sort Internal Strain Distribution in Freestanding Porous Silicon
dc.creator.none.fl_str_mv Pusep, Y. A.
Rodrigues, D. A.
Galzerani, J. C.
Arce, Roberto Delio
Koropecki, Roberto Roman
Comedi, David Mario
author Pusep, Y. A.
author_facet Pusep, Y. A.
Rodrigues, D. A.
Galzerani, J. C.
Arce, Roberto Delio
Koropecki, Roberto Roman
Comedi, David Mario
author_role author
author2 Rodrigues, D. A.
Galzerani, J. C.
Arce, Roberto Delio
Koropecki, Roberto Roman
Comedi, David Mario
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Porous Silicon
Raman Spectroscopy
Elastic Properties
topic Porous Silicon
Raman Spectroscopy
Elastic Properties
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.
Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil
Fil: Rodrigues, D. A.. Universidade Federal do Sao Carlos; Brasil
Fil: Galzerani, J. C.. Universidade Federal do Sao Carlos; Brasil
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.
publishDate 2009
dc.date.none.fl_str_mv 2009-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/26088
Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio; Koropecki, Roberto Roman; et al.; Internal Strain Distribution in Freestanding Porous Silicon; Electrochemical Society; Journal of the Electrochemical Society; 156; 12; 12-2009; 215-217
0013-4651
CONICET Digital
CONICET
url http://hdl.handle.net/11336/26088
identifier_str_mv Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio; Koropecki, Roberto Roman; et al.; Internal Strain Distribution in Freestanding Porous Silicon; Electrochemical Society; Journal of the Electrochemical Society; 156; 12; 12-2009; 215-217
0013-4651
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1149/1.3225832
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Electrochemical Society
publisher.none.fl_str_mv Electrochemical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.48226

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