Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures

Autores
Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Schmidt, Javier Alejandro
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We show that commercial float glass can be used as a substrate to deposit polycrystalline silicon (poly-Si) by chemical vapor deposition from trichlorosilane at temperatures between 740 and 870 ºC. By using scanning electron microscopy an average grain size lower than 0.4 μm was observed, with a columnar structure suitable for the electrical conduction in photovoltaic cells. X-ray diffraction reveals a strong (2 2 0) preferential orientation of the films, which is indicative of a low density of intra-grain defects. Atomic force microscope images reveal a conical structure, with a root mean square roughness of 65 nm for samples of around 3 μm in thickness. This natural texture is a positive characteristic from the point of view of light trapping. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained, as shown by dark conductivity measurements as a function of temperature. The process, the reactants and the substrate used are of low cost and proved to be adequate for direct poly-Si deposition.
Fil: Benvenuto, Ariel Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
Materia
Silicio Policristalino
Cvd
Clorosilanos
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/18824
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/18824
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperaturesBenvenuto, Ariel GastónBuitrago, Roman HoracioSchmidt, Javier AlejandroSilicio PolicristalinoCvdClorosilanoshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We show that commercial float glass can be used as a substrate to deposit polycrystalline silicon (poly-Si) by chemical vapor deposition from trichlorosilane at temperatures between 740 and 870 ºC. By using scanning electron microscopy an average grain size lower than 0.4 μm was observed, with a columnar structure suitable for the electrical conduction in photovoltaic cells. X-ray diffraction reveals a strong (2 2 0) preferential orientation of the films, which is indicative of a low density of intra-grain defects. Atomic force microscope images reveal a conical structure, with a root mean square roughness of 65 nm for samples of around 3 μm in thickness. This natural texture is a positive characteristic from the point of view of light trapping. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained, as shown by dark conductivity measurements as a function of temperature. The process, the reactants and the substrate used are of low cost and proved to be adequate for direct poly-Si deposition.Fil: Benvenuto, Ariel Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; ArgentinaFil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; ArgentinaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; ArgentinaEdp Sciences2012-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/18824Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Schmidt, Javier Alejandro; Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures; Edp Sciences; European Physical Journal Applied Physics; 58; 5-2012; 201011-2010171286-0042CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://epjap.epj.org/articles/epjap/abs/2012/05/ap110311/ap110311.htmlinfo:eu-repo/semantics/altIdentifier/doi/10.1051/epjap/2012110311info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:59:15Zoai:ri.conicet.gov.ar:11336/18824instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:59:15.566CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
title Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
spellingShingle Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
Benvenuto, Ariel Gastón
Silicio Policristalino
Cvd
Clorosilanos
title_short Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
title_full Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
title_fullStr Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
title_full_unstemmed Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
title_sort Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
dc.creator.none.fl_str_mv Benvenuto, Ariel Gastón
Buitrago, Roman Horacio
Schmidt, Javier Alejandro
author Benvenuto, Ariel Gastón
author_facet Benvenuto, Ariel Gastón
Buitrago, Roman Horacio
Schmidt, Javier Alejandro
author_role author
author2 Buitrago, Roman Horacio
Schmidt, Javier Alejandro
author2_role author
author
dc.subject.none.fl_str_mv Silicio Policristalino
Cvd
Clorosilanos
topic Silicio Policristalino
Cvd
Clorosilanos
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We show that commercial float glass can be used as a substrate to deposit polycrystalline silicon (poly-Si) by chemical vapor deposition from trichlorosilane at temperatures between 740 and 870 ºC. By using scanning electron microscopy an average grain size lower than 0.4 μm was observed, with a columnar structure suitable for the electrical conduction in photovoltaic cells. X-ray diffraction reveals a strong (2 2 0) preferential orientation of the films, which is indicative of a low density of intra-grain defects. Atomic force microscope images reveal a conical structure, with a root mean square roughness of 65 nm for samples of around 3 μm in thickness. This natural texture is a positive characteristic from the point of view of light trapping. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained, as shown by dark conductivity measurements as a function of temperature. The process, the reactants and the substrate used are of low cost and proved to be adequate for direct poly-Si deposition.
Fil: Benvenuto, Ariel Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico Para la Industria Química; Argentina
description We show that commercial float glass can be used as a substrate to deposit polycrystalline silicon (poly-Si) by chemical vapor deposition from trichlorosilane at temperatures between 740 and 870 ºC. By using scanning electron microscopy an average grain size lower than 0.4 μm was observed, with a columnar structure suitable for the electrical conduction in photovoltaic cells. X-ray diffraction reveals a strong (2 2 0) preferential orientation of the films, which is indicative of a low density of intra-grain defects. Atomic force microscope images reveal a conical structure, with a root mean square roughness of 65 nm for samples of around 3 μm in thickness. This natural texture is a positive characteristic from the point of view of light trapping. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained, as shown by dark conductivity measurements as a function of temperature. The process, the reactants and the substrate used are of low cost and proved to be adequate for direct poly-Si deposition.
publishDate 2012
dc.date.none.fl_str_mv 2012-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/18824
Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Schmidt, Javier Alejandro; Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures; Edp Sciences; European Physical Journal Applied Physics; 58; 5-2012; 201011-201017
1286-0042
CONICET Digital
CONICET
url http://hdl.handle.net/11336/18824
identifier_str_mv Benvenuto, Ariel Gastón; Buitrago, Roman Horacio; Schmidt, Javier Alejandro; Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures; Edp Sciences; European Physical Journal Applied Physics; 58; 5-2012; 201011-201017
1286-0042
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://epjap.epj.org/articles/epjap/abs/2012/05/ap110311/ap110311.html
info:eu-repo/semantics/altIdentifier/doi/10.1051/epjap/2012110311
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Edp Sciences
publisher.none.fl_str_mv Edp Sciences
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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