Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon

Autores
Schmidt, Javier Alejandro; Budini, Nicolas; Arce, Roberto Delio; Buitrago, Roman Horacio
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, we use the nickel-induced crystallization process to crystallize a-Si:H thin films at temperatures compatible with the utilization of glass substrates. Hydrogenated amorphous silicon films are deposited on planar float glass (Schott AF37) by plasma-enhanced chemical vapour deposition. The films, between 400 and 1400 nm thick, are grown intrinsic, slightly p-doped (p-) or with a combined structure of heavily p-doped / slightly p-doped (p+/p-) layers. On these films we sputter nickel with concentrations between 2.5×1014 and 3×1015 at./cm2 and then we anneal the samples in a standard nitrogenpurged tube furnace. The process evolves through the formation of the nickel silicide NiSi2, which has a lattice constant very similar to that of c-Si and acts as a nucleation centre. As a result of this thermal treatment we obtain thin polycrystalline films with a grain size over 100 μm. The high crystallinity of the samples is confirmed through optical and electron microscopy observations, Xrays diffraction and Raman spectroscopy.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Fil: Budini, Nicolas. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Materia
Crystalline Silicon
Solar Cells
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/13360
Acceder
id CONICETDig_b585716064227e05b45c23d59f7f3960
oai_identifier_str oai:ri.conicet.gov.ar:11336/13360
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous siliconSchmidt, Javier AlejandroBudini, NicolasArce, Roberto DelioBuitrago, Roman HoracioCrystalline SiliconSolar Cellshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, we use the nickel-induced crystallization process to crystallize a-Si:H thin films at temperatures compatible with the utilization of glass substrates. Hydrogenated amorphous silicon films are deposited on planar float glass (Schott AF37) by plasma-enhanced chemical vapour deposition. The films, between 400 and 1400 nm thick, are grown intrinsic, slightly p-doped (p-) or with a combined structure of heavily p-doped / slightly p-doped (p+/p-) layers. On these films we sputter nickel with concentrations between 2.5×1014 and 3×1015 at./cm2 and then we anneal the samples in a standard nitrogenpurged tube furnace. The process evolves through the formation of the nickel silicide NiSi2, which has a lattice constant very similar to that of c-Si and acts as a nucleation centre. As a result of this thermal treatment we obtain thin polycrystalline films with a grain size over 100 μm. The high crystallinity of the samples is confirmed through optical and electron microscopy observations, Xrays diffraction and Raman spectroscopy.Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; ArgentinaFil: Budini, Nicolas. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; ArgentinaFil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; ArgentinaFil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; ArgentinaWiley2011-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/13360Schmidt, Javier Alejandro; Budini, Nicolas; Arce, Roberto Delio; Buitrago, Roman Horacio; Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon; Wiley; Physica Status Solidi (C); 7; 3-4; 1-2011; 600-6031610-1642enginfo:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.200982708info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssc.200982708/abstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:49:31Zoai:ri.conicet.gov.ar:11336/13360instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:49:31.565CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
title Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
spellingShingle Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
Schmidt, Javier Alejandro
Crystalline Silicon
Solar Cells
title_short Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
title_full Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
title_fullStr Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
title_full_unstemmed Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
title_sort Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
dc.creator.none.fl_str_mv Schmidt, Javier Alejandro
Budini, Nicolas
Arce, Roberto Delio
Buitrago, Roman Horacio
author Schmidt, Javier Alejandro
author_facet Schmidt, Javier Alejandro
Budini, Nicolas
Arce, Roberto Delio
Buitrago, Roman Horacio
author_role author
author2 Budini, Nicolas
Arce, Roberto Delio
Buitrago, Roman Horacio
author2_role author
author
author
dc.subject.none.fl_str_mv Crystalline Silicon
Solar Cells
topic Crystalline Silicon
Solar Cells
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, we use the nickel-induced crystallization process to crystallize a-Si:H thin films at temperatures compatible with the utilization of glass substrates. Hydrogenated amorphous silicon films are deposited on planar float glass (Schott AF37) by plasma-enhanced chemical vapour deposition. The films, between 400 and 1400 nm thick, are grown intrinsic, slightly p-doped (p-) or with a combined structure of heavily p-doped / slightly p-doped (p+/p-) layers. On these films we sputter nickel with concentrations between 2.5×1014 and 3×1015 at./cm2 and then we anneal the samples in a standard nitrogenpurged tube furnace. The process evolves through the formation of the nickel silicide NiSi2, which has a lattice constant very similar to that of c-Si and acts as a nucleation centre. As a result of this thermal treatment we obtain thin polycrystalline films with a grain size over 100 μm. The high crystallinity of the samples is confirmed through optical and electron microscopy observations, Xrays diffraction and Raman spectroscopy.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Fil: Budini, Nicolas. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Universidad Nacional del Litoral; Argentina
description In this work, we use the nickel-induced crystallization process to crystallize a-Si:H thin films at temperatures compatible with the utilization of glass substrates. Hydrogenated amorphous silicon films are deposited on planar float glass (Schott AF37) by plasma-enhanced chemical vapour deposition. The films, between 400 and 1400 nm thick, are grown intrinsic, slightly p-doped (p-) or with a combined structure of heavily p-doped / slightly p-doped (p+/p-) layers. On these films we sputter nickel with concentrations between 2.5×1014 and 3×1015 at./cm2 and then we anneal the samples in a standard nitrogenpurged tube furnace. The process evolves through the formation of the nickel silicide NiSi2, which has a lattice constant very similar to that of c-Si and acts as a nucleation centre. As a result of this thermal treatment we obtain thin polycrystalline films with a grain size over 100 μm. The high crystallinity of the samples is confirmed through optical and electron microscopy observations, Xrays diffraction and Raman spectroscopy.
publishDate 2011
dc.date.none.fl_str_mv 2011-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/13360
Schmidt, Javier Alejandro; Budini, Nicolas; Arce, Roberto Delio; Buitrago, Roman Horacio; Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon; Wiley; Physica Status Solidi (C); 7; 3-4; 1-2011; 600-603
1610-1642
url http://hdl.handle.net/11336/13360
identifier_str_mv Schmidt, Javier Alejandro; Budini, Nicolas; Arce, Roberto Delio; Buitrago, Roman Horacio; Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon; Wiley; Physica Status Solidi (C); 7; 3-4; 1-2011; 600-603
1610-1642
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.200982708
info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssc.200982708/abstract
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley
publisher.none.fl_str_mv Wiley
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842268977690050560
score 13.13397

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