X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides

Autores
Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Roschuk, T.; Flynn, M. J.; Mascher, P.
Año de publicación
2006
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray diffraction. SRSO samples with Si concentrations (y) of 0.40, 0.42, and 0.45 were grown by inductively coupled plasma-enhanced chemical-vapor deposition (PECVD). Samples with y=0.42 grown by electron-cyclotron-resonance PECVD were also studied. Annealing treatments were performed at temperatures (T) of 900, 1000, and 1100 °C for times (t) between 0.5 and 3 h in flowing Ar. As-grown SRSO films did not present signs of Si clusters (amorphous or crystalline); however, (111), (220), and (311) Bragg peaks corresponding to c-Si were clearly seen after annealing at 900 °C for the y=0.45 sample, but only barely seen for the y=0.42 and undetected for the y=0.40 samples. For T=1000 °C, all studied SRSO samples clearly showed the c-Si diffraction peaks, which became narrower with increasing t and T. From the width of the Si (111) peaks, the mean size of Si-ncs and their dependence on T and t was determined. Activation energies were deduced from the T dependence by fitting the results to two growth models of Si precipitates in an a-SiO2 matrix reported in the literature. The activation energies qualitatively agree with values deduced from transmission electron microscopy studies of annealed SRSO reported in the literature. However, they are significantly lower than Si diffusion activation energies available in the literature for SiO2 with low excess Si. A broad feature is also observed in the x-ray diffractograms for as-grown samples with low y, which shifts to the peak position corresponding to a-SiO2 with increasing T. This behavior is explained by the formation of a well-defined a-SiO2 phase with increasing T, where mixed Si-O4-nSin (n=1,2,3) tetrahedra in the as-grown alloy are gradually converted into Si-O4 and Si-Si4 as phase separation of Si and SiO2 proceeds. From the measured Si (111) peak positions, small Si-ncs are found to be tensilely strained by as much as ~0.8%. This effect becomes insignificant as Si-ncs become larger with increasing y or T.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Zalloum, O. H. Y.. Mc Master University; Canadá
Fil: Irving, E. A.. Mc Master University; Canadá
Fil: Wojcik, J.. Mc Master University; Canadá
Fil: Roschuk, T.. Mc Master University; Canadá
Fil: Flynn, M. J.. Mc Master University; Canadá
Fil: Mascher, P.. Mc Master University; Canadá
Materia
Silicon oxide
Si nanocrystals
SRSO
X-ray diffraction
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/85670

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oai_identifier_str oai:ri.conicet.gov.ar:11336/85670
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network_name_str CONICET Digital (CONICET)
spelling X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxidesComedi, David MarioZalloum, O. H. Y.Irving, E. A.Wojcik, J.Roschuk, T.Flynn, M. J.Mascher, P.Silicon oxideSi nanocrystalsSRSOX-ray diffractionhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray diffraction. SRSO samples with Si concentrations (y) of 0.40, 0.42, and 0.45 were grown by inductively coupled plasma-enhanced chemical-vapor deposition (PECVD). Samples with y=0.42 grown by electron-cyclotron-resonance PECVD were also studied. Annealing treatments were performed at temperatures (T) of 900, 1000, and 1100 °C for times (t) between 0.5 and 3 h in flowing Ar. As-grown SRSO films did not present signs of Si clusters (amorphous or crystalline); however, (111), (220), and (311) Bragg peaks corresponding to c-Si were clearly seen after annealing at 900 °C for the y=0.45 sample, but only barely seen for the y=0.42 and undetected for the y=0.40 samples. For T=1000 °C, all studied SRSO samples clearly showed the c-Si diffraction peaks, which became narrower with increasing t and T. From the width of the Si (111) peaks, the mean size of Si-ncs and their dependence on T and t was determined. Activation energies were deduced from the T dependence by fitting the results to two growth models of Si precipitates in an a-SiO2 matrix reported in the literature. The activation energies qualitatively agree with values deduced from transmission electron microscopy studies of annealed SRSO reported in the literature. However, they are significantly lower than Si diffusion activation energies available in the literature for SiO2 with low excess Si. A broad feature is also observed in the x-ray diffractograms for as-grown samples with low y, which shifts to the peak position corresponding to a-SiO2 with increasing T. This behavior is explained by the formation of a well-defined a-SiO2 phase with increasing T, where mixed Si-O4-nSin (n=1,2,3) tetrahedra in the as-grown alloy are gradually converted into Si-O4 and Si-Si4 as phase separation of Si and SiO2 proceeds. From the measured Si (111) peak positions, small Si-ncs are found to be tensilely strained by as much as ~0.8%. This effect becomes insignificant as Si-ncs become larger with increasing y or T.Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaFil: Zalloum, O. H. Y.. Mc Master University; CanadáFil: Irving, E. A.. Mc Master University; CanadáFil: Wojcik, J.. Mc Master University; CanadáFil: Roschuk, T.. Mc Master University; CanadáFil: Flynn, M. J.. Mc Master University; CanadáFil: Mascher, P.. Mc Master University; CanadáAmerican Institute of Physics2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85670Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Roschuk, T.; et al.; X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides; American Institute of Physics; Journal of Applied Physics; 99; 2; 12-2006; 1-80021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.2162989info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.2162989info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:01:04Zoai:ri.conicet.gov.ar:11336/85670instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:01:04.584CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
title X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
spellingShingle X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
Comedi, David Mario
Silicon oxide
Si nanocrystals
SRSO
X-ray diffraction
title_short X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
title_full X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
title_fullStr X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
title_full_unstemmed X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
title_sort X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides
dc.creator.none.fl_str_mv Comedi, David Mario
Zalloum, O. H. Y.
Irving, E. A.
Wojcik, J.
Roschuk, T.
Flynn, M. J.
Mascher, P.
author Comedi, David Mario
author_facet Comedi, David Mario
Zalloum, O. H. Y.
Irving, E. A.
Wojcik, J.
Roschuk, T.
Flynn, M. J.
Mascher, P.
author_role author
author2 Zalloum, O. H. Y.
Irving, E. A.
Wojcik, J.
Roschuk, T.
Flynn, M. J.
Mascher, P.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Silicon oxide
Si nanocrystals
SRSO
X-ray diffraction
topic Silicon oxide
Si nanocrystals
SRSO
X-ray diffraction
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray diffraction. SRSO samples with Si concentrations (y) of 0.40, 0.42, and 0.45 were grown by inductively coupled plasma-enhanced chemical-vapor deposition (PECVD). Samples with y=0.42 grown by electron-cyclotron-resonance PECVD were also studied. Annealing treatments were performed at temperatures (T) of 900, 1000, and 1100 °C for times (t) between 0.5 and 3 h in flowing Ar. As-grown SRSO films did not present signs of Si clusters (amorphous or crystalline); however, (111), (220), and (311) Bragg peaks corresponding to c-Si were clearly seen after annealing at 900 °C for the y=0.45 sample, but only barely seen for the y=0.42 and undetected for the y=0.40 samples. For T=1000 °C, all studied SRSO samples clearly showed the c-Si diffraction peaks, which became narrower with increasing t and T. From the width of the Si (111) peaks, the mean size of Si-ncs and their dependence on T and t was determined. Activation energies were deduced from the T dependence by fitting the results to two growth models of Si precipitates in an a-SiO2 matrix reported in the literature. The activation energies qualitatively agree with values deduced from transmission electron microscopy studies of annealed SRSO reported in the literature. However, they are significantly lower than Si diffusion activation energies available in the literature for SiO2 with low excess Si. A broad feature is also observed in the x-ray diffractograms for as-grown samples with low y, which shifts to the peak position corresponding to a-SiO2 with increasing T. This behavior is explained by the formation of a well-defined a-SiO2 phase with increasing T, where mixed Si-O4-nSin (n=1,2,3) tetrahedra in the as-grown alloy are gradually converted into Si-O4 and Si-Si4 as phase separation of Si and SiO2 proceeds. From the measured Si (111) peak positions, small Si-ncs are found to be tensilely strained by as much as ~0.8%. This effect becomes insignificant as Si-ncs become larger with increasing y or T.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Zalloum, O. H. Y.. Mc Master University; Canadá
Fil: Irving, E. A.. Mc Master University; Canadá
Fil: Wojcik, J.. Mc Master University; Canadá
Fil: Roschuk, T.. Mc Master University; Canadá
Fil: Flynn, M. J.. Mc Master University; Canadá
Fil: Mascher, P.. Mc Master University; Canadá
description The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray diffraction. SRSO samples with Si concentrations (y) of 0.40, 0.42, and 0.45 were grown by inductively coupled plasma-enhanced chemical-vapor deposition (PECVD). Samples with y=0.42 grown by electron-cyclotron-resonance PECVD were also studied. Annealing treatments were performed at temperatures (T) of 900, 1000, and 1100 °C for times (t) between 0.5 and 3 h in flowing Ar. As-grown SRSO films did not present signs of Si clusters (amorphous or crystalline); however, (111), (220), and (311) Bragg peaks corresponding to c-Si were clearly seen after annealing at 900 °C for the y=0.45 sample, but only barely seen for the y=0.42 and undetected for the y=0.40 samples. For T=1000 °C, all studied SRSO samples clearly showed the c-Si diffraction peaks, which became narrower with increasing t and T. From the width of the Si (111) peaks, the mean size of Si-ncs and their dependence on T and t was determined. Activation energies were deduced from the T dependence by fitting the results to two growth models of Si precipitates in an a-SiO2 matrix reported in the literature. The activation energies qualitatively agree with values deduced from transmission electron microscopy studies of annealed SRSO reported in the literature. However, they are significantly lower than Si diffusion activation energies available in the literature for SiO2 with low excess Si. A broad feature is also observed in the x-ray diffractograms for as-grown samples with low y, which shifts to the peak position corresponding to a-SiO2 with increasing T. This behavior is explained by the formation of a well-defined a-SiO2 phase with increasing T, where mixed Si-O4-nSin (n=1,2,3) tetrahedra in the as-grown alloy are gradually converted into Si-O4 and Si-Si4 as phase separation of Si and SiO2 proceeds. From the measured Si (111) peak positions, small Si-ncs are found to be tensilely strained by as much as ~0.8%. This effect becomes insignificant as Si-ncs become larger with increasing y or T.
publishDate 2006
dc.date.none.fl_str_mv 2006-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/85670
Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Roschuk, T.; et al.; X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides; American Institute of Physics; Journal of Applied Physics; 99; 2; 12-2006; 1-8
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/85670
identifier_str_mv Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Roschuk, T.; et al.; X-ray diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides; American Institute of Physics; Journal of Applied Physics; 99; 2; 12-2006; 1-8
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.2162989
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.2162989
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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