H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)

Autores
Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Mascher, P.
Año de publicación
2006
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
SiyO1−y:H (y=0.36 and 0.42) alloy films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition and subsequently annealed in (Ar+5%H2) at different temperatures. Glancing angle x-ray diffraction and Fourier transform infrared spectroscopy measurements revealed the formation of silicon nanoclusters (Si-ncl) in an amorphous SiO2 matrix for films annealed at temperatures of 900  °C and above. Negligible photoluminescence (PL) was observed at room temperature for the as-grown samples; however, PL bands appeared in the visible after the annealing treatments. The PL intensities are much higher and the spectra skewed to the red as compared to data obtained for similar samples annealed in pure Ar. These effects are attributed to the passivation by H atoms of nonradiative recombination centers in the materials annealed in (Ar+5%H2). The overall analysis of the PL data indicates that both quantum confinement and defect states contribute to the luminescence. Two-step annealing procedures [in Ar and then in (Ar+5%H2)] were found to yield slightly higher passivation efficiencies than single annealing steps in (Ar+5%H2).
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Zalloum, O. H. Y.. Mc Master University; Canadá
Fil: Irving, E. A.. Mc Master University; Canadá
Fil: Wojcik, J.. Mc Master University; Canadá
Fil: Mascher, P.. Mc Master University; Canadá
Materia
Si nanocrystals
substoichiometric oxides
photoluminescence
Hydrogen
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/85502
Acceder
id CONICETDig_7a82cf68426d5e6add00d202b72698f9
oai_identifier_str oai:ri.conicet.gov.ar:11336/85502
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)Comedi, David MarioZalloum, O. H. Y.Irving, E. A.Wojcik, J.Mascher, P.Si nanocrystalssubstoichiometric oxidesphotoluminescenceHydrogenhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1SiyO1−y:H (y=0.36 and 0.42) alloy films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition and subsequently annealed in (Ar+5%H2) at different temperatures. Glancing angle x-ray diffraction and Fourier transform infrared spectroscopy measurements revealed the formation of silicon nanoclusters (Si-ncl) in an amorphous SiO2 matrix for films annealed at temperatures of 900  °C and above. Negligible photoluminescence (PL) was observed at room temperature for the as-grown samples; however, PL bands appeared in the visible after the annealing treatments. The PL intensities are much higher and the spectra skewed to the red as compared to data obtained for similar samples annealed in pure Ar. These effects are attributed to the passivation by H atoms of nonradiative recombination centers in the materials annealed in (Ar+5%H2). The overall analysis of the PL data indicates that both quantum confinement and defect states contribute to the luminescence. Two-step annealing procedures [in Ar and then in (Ar+5%H2)] were found to yield slightly higher passivation efficiencies than single annealing steps in (Ar+5%H2).Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaFil: Zalloum, O. H. Y.. Mc Master University; CanadáFil: Irving, E. A.. Mc Master University; CanadáFil: Wojcik, J.. Mc Master University; CanadáFil: Mascher, P.. Mc Master University; CanadáA V S Amer Inst Physics2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85502Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Mascher, P.; H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2); A V S Amer Inst Physics; Journal Of Vacuum Science & Technology A - Vacuum Surfaces And Films; 24; 3; 12-2006; 817-8200734-2101CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1116/1.2177227info:eu-repo/semantics/altIdentifier/url/https://avs.scitation.org/doi/full/10.1116/1.2177227info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:47:11Zoai:ri.conicet.gov.ar:11336/85502instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:47:11.427CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
title H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
spellingShingle H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
Comedi, David Mario
Si nanocrystals
substoichiometric oxides
photoluminescence
Hydrogen
title_short H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
title_full H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
title_fullStr H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
title_full_unstemmed H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
title_sort H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2)
dc.creator.none.fl_str_mv Comedi, David Mario
Zalloum, O. H. Y.
Irving, E. A.
Wojcik, J.
Mascher, P.
author Comedi, David Mario
author_facet Comedi, David Mario
Zalloum, O. H. Y.
Irving, E. A.
Wojcik, J.
Mascher, P.
author_role author
author2 Zalloum, O. H. Y.
Irving, E. A.
Wojcik, J.
Mascher, P.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Si nanocrystals
substoichiometric oxides
photoluminescence
Hydrogen
topic Si nanocrystals
substoichiometric oxides
photoluminescence
Hydrogen
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv SiyO1−y:H (y=0.36 and 0.42) alloy films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition and subsequently annealed in (Ar+5%H2) at different temperatures. Glancing angle x-ray diffraction and Fourier transform infrared spectroscopy measurements revealed the formation of silicon nanoclusters (Si-ncl) in an amorphous SiO2 matrix for films annealed at temperatures of 900  °C and above. Negligible photoluminescence (PL) was observed at room temperature for the as-grown samples; however, PL bands appeared in the visible after the annealing treatments. The PL intensities are much higher and the spectra skewed to the red as compared to data obtained for similar samples annealed in pure Ar. These effects are attributed to the passivation by H atoms of nonradiative recombination centers in the materials annealed in (Ar+5%H2). The overall analysis of the PL data indicates that both quantum confinement and defect states contribute to the luminescence. Two-step annealing procedures [in Ar and then in (Ar+5%H2)] were found to yield slightly higher passivation efficiencies than single annealing steps in (Ar+5%H2).
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Zalloum, O. H. Y.. Mc Master University; Canadá
Fil: Irving, E. A.. Mc Master University; Canadá
Fil: Wojcik, J.. Mc Master University; Canadá
Fil: Mascher, P.. Mc Master University; Canadá
description SiyO1−y:H (y=0.36 and 0.42) alloy films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition and subsequently annealed in (Ar+5%H2) at different temperatures. Glancing angle x-ray diffraction and Fourier transform infrared spectroscopy measurements revealed the formation of silicon nanoclusters (Si-ncl) in an amorphous SiO2 matrix for films annealed at temperatures of 900  °C and above. Negligible photoluminescence (PL) was observed at room temperature for the as-grown samples; however, PL bands appeared in the visible after the annealing treatments. The PL intensities are much higher and the spectra skewed to the red as compared to data obtained for similar samples annealed in pure Ar. These effects are attributed to the passivation by H atoms of nonradiative recombination centers in the materials annealed in (Ar+5%H2). The overall analysis of the PL data indicates that both quantum confinement and defect states contribute to the luminescence. Two-step annealing procedures [in Ar and then in (Ar+5%H2)] were found to yield slightly higher passivation efficiencies than single annealing steps in (Ar+5%H2).
publishDate 2006
dc.date.none.fl_str_mv 2006-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/85502
Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Mascher, P.; H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2); A V S Amer Inst Physics; Journal Of Vacuum Science & Technology A - Vacuum Surfaces And Films; 24; 3; 12-2006; 817-820
0734-2101
CONICET Digital
CONICET
url http://hdl.handle.net/11336/85502
identifier_str_mv Comedi, David Mario; Zalloum, O. H. Y.; Irving, E. A.; Wojcik, J.; Mascher, P.; H-Induced effects in luminescent silicon nanostructures obtained from PECVD grown SiyO1-y:H (y>1/3) thin films annealed in (Ar+5%H2); A V S Amer Inst Physics; Journal Of Vacuum Science & Technology A - Vacuum Surfaces And Films; 24; 3; 12-2006; 817-820
0734-2101
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1116/1.2177227
info:eu-repo/semantics/altIdentifier/url/https://avs.scitation.org/doi/full/10.1116/1.2177227
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv A V S Amer Inst Physics
publisher.none.fl_str_mv A V S Amer Inst Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613470158323712
score 13.070432

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