Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films

Autores
Comedi, David Mario; Zalloum, O. H. Y.; Wojcik, J.; Mascher, P.
Año de publicación
2006
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide (Si-nc/SiO2) composites were obtained from SiyO1-y (y=0.36, 0.42) thin films deposited by plasma-enhanced chemical vapor deposition. The unhydrogenated composites were fabricated by promoting the Si precipitation through thermal annealing of the films in flowing pure Ar at temperatures up to T=1100oC. Fourier transform infrared spectroscopy (FTIR) and elastic recoil detection analysis (ERDA) did not detect any trace of H in these samples. The hydrogenated composites were obtained from identical films by replacing the Ar with (Ar+5%H2) in the annealing step. The photoluminescence (PL) of the composites was studied as a function of the annealing temperature, annealing time and pump laser power. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Zalloum, O. H. Y.. McMaster University; Canadá
Fil: Wojcik, J.. McMaster University; Canadá
Fil: Mascher, P.. McMaster University; Canadá
Materia
Hydrogen
Si nanocrystals
Si dioxide
Photoluminescence
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/85497

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network_name_str CONICET Digital (CONICET)
spelling Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide filmsComedi, David MarioZalloum, O. H. Y.Wojcik, J.Mascher, P.HydrogenSi nanocrystalsSi dioxidePhotoluminescencehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide (Si-nc/SiO2) composites were obtained from SiyO1-y (y=0.36, 0.42) thin films deposited by plasma-enhanced chemical vapor deposition. The unhydrogenated composites were fabricated by promoting the Si precipitation through thermal annealing of the films in flowing pure Ar at temperatures up to T=1100oC. Fourier transform infrared spectroscopy (FTIR) and elastic recoil detection analysis (ERDA) did not detect any trace of H in these samples. The hydrogenated composites were obtained from identical films by replacing the Ar with (Ar+5%H2) in the annealing step. The photoluminescence (PL) of the composites was studied as a function of the annealing temperature, annealing time and pump laser power. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths.Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; ArgentinaFil: Zalloum, O. H. Y.. McMaster University; CanadáFil: Wojcik, J.. McMaster University; CanadáFil: Mascher, P.. McMaster University; CanadáInstitute of Electrical and Electronics Engineers2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85497Comedi, David Mario; Zalloum, O. H. Y.; Wojcik, J.; Mascher, P.; Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films; Institute of Electrical and Electronics Engineers; Ieee Journal Of Selected Topics In Quantum Electronics; 12; 6; 12-2006; 1561-15691077-260XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1109/JSTQE.2006.885388info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/4032636info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:34:56Zoai:ri.conicet.gov.ar:11336/85497instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:34:57.175CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
title Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
spellingShingle Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
Comedi, David Mario
Hydrogen
Si nanocrystals
Si dioxide
Photoluminescence
title_short Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
title_full Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
title_fullStr Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
title_full_unstemmed Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
title_sort Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films
dc.creator.none.fl_str_mv Comedi, David Mario
Zalloum, O. H. Y.
Wojcik, J.
Mascher, P.
author Comedi, David Mario
author_facet Comedi, David Mario
Zalloum, O. H. Y.
Wojcik, J.
Mascher, P.
author_role author
author2 Zalloum, O. H. Y.
Wojcik, J.
Mascher, P.
author2_role author
author
author
dc.subject.none.fl_str_mv Hydrogen
Si nanocrystals
Si dioxide
Photoluminescence
topic Hydrogen
Si nanocrystals
Si dioxide
Photoluminescence
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide (Si-nc/SiO2) composites were obtained from SiyO1-y (y=0.36, 0.42) thin films deposited by plasma-enhanced chemical vapor deposition. The unhydrogenated composites were fabricated by promoting the Si precipitation through thermal annealing of the films in flowing pure Ar at temperatures up to T=1100oC. Fourier transform infrared spectroscopy (FTIR) and elastic recoil detection analysis (ERDA) did not detect any trace of H in these samples. The hydrogenated composites were obtained from identical films by replacing the Ar with (Ar+5%H2) in the annealing step. The photoluminescence (PL) of the composites was studied as a function of the annealing temperature, annealing time and pump laser power. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina
Fil: Zalloum, O. H. Y.. McMaster University; Canadá
Fil: Wojcik, J.. McMaster University; Canadá
Fil: Mascher, P.. McMaster University; Canadá
description Hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide (Si-nc/SiO2) composites were obtained from SiyO1-y (y=0.36, 0.42) thin films deposited by plasma-enhanced chemical vapor deposition. The unhydrogenated composites were fabricated by promoting the Si precipitation through thermal annealing of the films in flowing pure Ar at temperatures up to T=1100oC. Fourier transform infrared spectroscopy (FTIR) and elastic recoil detection analysis (ERDA) did not detect any trace of H in these samples. The hydrogenated composites were obtained from identical films by replacing the Ar with (Ar+5%H2) in the annealing step. The photoluminescence (PL) of the composites was studied as a function of the annealing temperature, annealing time and pump laser power. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths. The PL intensity in the Ar-annealed samples increases with increasing annealing temperature, and it increases and then tends to saturation as a function of the annealing time at 1100oC. For the samples annealed in (Ar+5%H2), a qualitatively similar behavior is observed, however, the PL intensity is several hundreds percent larger. The FTIR spectra show that H in these samples incorporates as Si-H bonds. The analysis of the Si-H stretching band, in conjunction with results from previous studies of the Si/SiO2 phase separation process, suggests that a fraction of these bonds are located in the Si/SiO2 interface regions. The dependence of the PL spectra on y, T, and laser power are consistent with the assumption that light emission in both hydrogenated and unhydrogenated Si-nc/SiO2 composites originates from bandgap transitions involving electron quantum confinement in the Si-ncs, the details of the recombination mechanism still being unclear. The PL spectra from the hydrogenated films are skewed to the red as compared to those from the unhydrogenated ones. The bulk of the data indicates that H passivates nonradiative recombination centers, mostly probably Si dangling bonds in the Si-nc/SiO2 regions, thus increasing the number of Si-ncs that contribute to the PL and modifying the distribution of emission wavelengths.
publishDate 2006
dc.date.none.fl_str_mv 2006-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/85497
Comedi, David Mario; Zalloum, O. H. Y.; Wojcik, J.; Mascher, P.; Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films; Institute of Electrical and Electronics Engineers; Ieee Journal Of Selected Topics In Quantum Electronics; 12; 6; 12-2006; 1561-1569
1077-260X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/85497
identifier_str_mv Comedi, David Mario; Zalloum, O. H. Y.; Wojcik, J.; Mascher, P.; Light emission from hydrogenated and unhydrogenated Si-nanocrystal/Si dioxide composites based on PECVD-grown Si-Rich Si oxide films; Institute of Electrical and Electronics Engineers; Ieee Journal Of Selected Topics In Quantum Electronics; 12; 6; 12-2006; 1561-1569
1077-260X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1109/JSTQE.2006.885388
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/4032636
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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