White light from annealed porous silicon: Broadband emission from violet to the near infrared

Autores
Marín Ramírez, Oscar Alonso; Gennaro, Ana Maria; Tirado, Monica Cecilia; Koropecki, Roberto Roman; Comedi, David Mario
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad emission from ultraviolet to near infrared. Annealed PS samples were studied by photoluminescence, FTIR and EPR spectroscopies. The PL spectra were found to include three main components centered at the violet, green and infrared. The FTIR experiments suggest the formation of a system composed by silicon nanocrystals embedded in a nonstoichiometric silicon oxide matrix (nc-Si/SiOx). The EPR measurements reveal the existence of the well-know Pb0 (g~2.007) and Pb1 (g~2.004) centres, and of a signal at g~1.9997. The combined PL, FTIR and EPR results suggest that violet and green emissions come from oxygen-excess defects in SiOx while the infrared emission is related to defects located at Si/SiOx interfaces.
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Gennaro, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Comedi, David Mario. Universidad Catolica de la Plata. Facultad de Ciencias Exactas y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
White Light Emission
Photoluminescence
Porous Silicon
Silicon Dioxide
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/30225
Acceder
id CONICETDig_e5d44a395d7193560ab6433df32ea103
oai_identifier_str oai:ri.conicet.gov.ar:11336/30225
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling White light from annealed porous silicon: Broadband emission from violet to the near infraredMarín Ramírez, Oscar AlonsoGennaro, Ana MariaTirado, Monica CeciliaKoropecki, Roberto RomanComedi, David MarioWhite Light EmissionPhotoluminescencePorous SiliconSilicon Dioxidehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad emission from ultraviolet to near infrared. Annealed PS samples were studied by photoluminescence, FTIR and EPR spectroscopies. The PL spectra were found to include three main components centered at the violet, green and infrared. The FTIR experiments suggest the formation of a system composed by silicon nanocrystals embedded in a nonstoichiometric silicon oxide matrix (nc-Si/SiOx). The EPR measurements reveal the existence of the well-know Pb0 (g~2.007) and Pb1 (g~2.004) centres, and of a signal at g~1.9997. The combined PL, FTIR and EPR results suggest that violet and green emissions come from oxygen-excess defects in SiOx while the infrared emission is related to defects located at Si/SiOx interfaces.Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Gennaro, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Comedi, David Mario. Universidad Catolica de la Plata. Facultad de Ciencias Exactas y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaElsevier Science2015-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/zipapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/30225Marín Ramírez, Oscar Alonso; Gennaro, Ana Maria; Tirado, Monica Cecilia; Koropecki, Roberto Roman; Comedi, David Mario; White light from annealed porous silicon: Broadband emission from violet to the near infrared; Elsevier Science; Materials Letters; 150; 3-2015; 55-580167-577XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.matlet.2015.03.003info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0167577X15003572info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:18:29Zoai:ri.conicet.gov.ar:11336/30225instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:18:29.611CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv White light from annealed porous silicon: Broadband emission from violet to the near infrared
title White light from annealed porous silicon: Broadband emission from violet to the near infrared
spellingShingle White light from annealed porous silicon: Broadband emission from violet to the near infrared
Marín Ramírez, Oscar Alonso
White Light Emission
Photoluminescence
Porous Silicon
Silicon Dioxide
title_short White light from annealed porous silicon: Broadband emission from violet to the near infrared
title_full White light from annealed porous silicon: Broadband emission from violet to the near infrared
title_fullStr White light from annealed porous silicon: Broadband emission from violet to the near infrared
title_full_unstemmed White light from annealed porous silicon: Broadband emission from violet to the near infrared
title_sort White light from annealed porous silicon: Broadband emission from violet to the near infrared
dc.creator.none.fl_str_mv Marín Ramírez, Oscar Alonso
Gennaro, Ana Maria
Tirado, Monica Cecilia
Koropecki, Roberto Roman
Comedi, David Mario
author Marín Ramírez, Oscar Alonso
author_facet Marín Ramírez, Oscar Alonso
Gennaro, Ana Maria
Tirado, Monica Cecilia
Koropecki, Roberto Roman
Comedi, David Mario
author_role author
author2 Gennaro, Ana Maria
Tirado, Monica Cecilia
Koropecki, Roberto Roman
Comedi, David Mario
author2_role author
author
author
author
dc.subject.none.fl_str_mv White Light Emission
Photoluminescence
Porous Silicon
Silicon Dioxide
topic White Light Emission
Photoluminescence
Porous Silicon
Silicon Dioxide
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad emission from ultraviolet to near infrared. Annealed PS samples were studied by photoluminescence, FTIR and EPR spectroscopies. The PL spectra were found to include three main components centered at the violet, green and infrared. The FTIR experiments suggest the formation of a system composed by silicon nanocrystals embedded in a nonstoichiometric silicon oxide matrix (nc-Si/SiOx). The EPR measurements reveal the existence of the well-know Pb0 (g~2.007) and Pb1 (g~2.004) centres, and of a signal at g~1.9997. The combined PL, FTIR and EPR results suggest that violet and green emissions come from oxygen-excess defects in SiOx while the infrared emission is related to defects located at Si/SiOx interfaces.
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Gennaro, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Comedi, David Mario. Universidad Catolica de la Plata. Facultad de Ciencias Exactas y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description We report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad emission from ultraviolet to near infrared. Annealed PS samples were studied by photoluminescence, FTIR and EPR spectroscopies. The PL spectra were found to include three main components centered at the violet, green and infrared. The FTIR experiments suggest the formation of a system composed by silicon nanocrystals embedded in a nonstoichiometric silicon oxide matrix (nc-Si/SiOx). The EPR measurements reveal the existence of the well-know Pb0 (g~2.007) and Pb1 (g~2.004) centres, and of a signal at g~1.9997. The combined PL, FTIR and EPR results suggest that violet and green emissions come from oxygen-excess defects in SiOx while the infrared emission is related to defects located at Si/SiOx interfaces.
publishDate 2015
dc.date.none.fl_str_mv 2015-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/30225
Marín Ramírez, Oscar Alonso; Gennaro, Ana Maria; Tirado, Monica Cecilia; Koropecki, Roberto Roman; Comedi, David Mario; White light from annealed porous silicon: Broadband emission from violet to the near infrared; Elsevier Science; Materials Letters; 150; 3-2015; 55-58
0167-577X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/30225
identifier_str_mv Marín Ramírez, Oscar Alonso; Gennaro, Ana Maria; Tirado, Monica Cecilia; Koropecki, Roberto Roman; Comedi, David Mario; White light from annealed porous silicon: Broadband emission from violet to the near infrared; Elsevier Science; Materials Letters; 150; 3-2015; 55-58
0167-577X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.matlet.2015.03.003
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0167577X15003572
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/zip
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846781648760209408
score 12.982451

Publicaciones similares