Pressure dependence of the silicon carbide synthesis temperature

Autores
Limandri, Silvina Paola; Garbarino, G.; Sifre, D.; Mezouar, M.; Galván Josa, Víctor Martín
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The starting temperature for SiC synthesis from elemental silicon, carbon black, and graphite powders was determined for pressures ranging from 0.8 to 11 GPa by in situ X-ray diffraction experiments. The synthesized SiC corresponds to the cubic 3C phase with the presence of stacking faults along the [111] direction. The lowest density of the stacking faults is achieved when black carbon is used instead of graphite. The minimum temperature to start the Si + C → SiC reaction slightly decreases when the pressure is increased up to 6 GPa and the reaction begins before silicon melts. For pressures higher than 8 GPa, the starting temperature increases, and the formation of SiC from the SiII phase requires the complete melting of silicon. Bulk modulus Bo= 236(14) GPa was obtained for the synthesized SiC phase.
Fil: Limandri, Silvina Paola. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
Fil: Garbarino, G.. European Synchrotron Radiation; Francia
Fil: Sifre, D.. European Synchrotron Radiation; Francia
Fil: Mezouar, M.. European Synchrotron Radiation; Francia
Fil: Galván Josa, Víctor Martín. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
Materia
SILICON CARBIDE
HIGH PRESSURE
X RAY DIFFRACTION
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/124878
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Pressure dependence of the silicon carbide synthesis temperatureLimandri, Silvina PaolaGarbarino, G.Sifre, D.Mezouar, M.Galván Josa, Víctor MartínSILICON CARBIDEHIGH PRESSUREX RAY DIFFRACTIONhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The starting temperature for SiC synthesis from elemental silicon, carbon black, and graphite powders was determined for pressures ranging from 0.8 to 11 GPa by in situ X-ray diffraction experiments. The synthesized SiC corresponds to the cubic 3C phase with the presence of stacking faults along the [111] direction. The lowest density of the stacking faults is achieved when black carbon is used instead of graphite. The minimum temperature to start the Si + C → SiC reaction slightly decreases when the pressure is increased up to 6 GPa and the reaction begins before silicon melts. For pressures higher than 8 GPa, the starting temperature increases, and the formation of SiC from the SiII phase requires the complete melting of silicon. Bulk modulus Bo= 236(14) GPa was obtained for the synthesized SiC phase.Fil: Limandri, Silvina Paola. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; ArgentinaFil: Garbarino, G.. European Synchrotron Radiation; FranciaFil: Sifre, D.. European Synchrotron Radiation; FranciaFil: Mezouar, M.. European Synchrotron Radiation; FranciaFil: Galván Josa, Víctor Martín. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; ArgentinaAmerican Institute of Physics2019-04-26info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/124878Limandri, Silvina Paola; Garbarino, G.; Sifre, D.; Mezouar, M.; Galván Josa, Víctor Martín; Pressure dependence of the silicon carbide synthesis temperature; American Institute of Physics; Journal of Applied Physics; 125; 16; 26-4-2019; 1659020021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5085839info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5085839info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:46:41Zoai:ri.conicet.gov.ar:11336/124878instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:46:41.79CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Pressure dependence of the silicon carbide synthesis temperature
title Pressure dependence of the silicon carbide synthesis temperature
spellingShingle Pressure dependence of the silicon carbide synthesis temperature
Limandri, Silvina Paola
SILICON CARBIDE
HIGH PRESSURE
X RAY DIFFRACTION
title_short Pressure dependence of the silicon carbide synthesis temperature
title_full Pressure dependence of the silicon carbide synthesis temperature
title_fullStr Pressure dependence of the silicon carbide synthesis temperature
title_full_unstemmed Pressure dependence of the silicon carbide synthesis temperature
title_sort Pressure dependence of the silicon carbide synthesis temperature
dc.creator.none.fl_str_mv Limandri, Silvina Paola
Garbarino, G.
Sifre, D.
Mezouar, M.
Galván Josa, Víctor Martín
author Limandri, Silvina Paola
author_facet Limandri, Silvina Paola
Garbarino, G.
Sifre, D.
Mezouar, M.
Galván Josa, Víctor Martín
author_role author
author2 Garbarino, G.
Sifre, D.
Mezouar, M.
Galván Josa, Víctor Martín
author2_role author
author
author
author
dc.subject.none.fl_str_mv SILICON CARBIDE
HIGH PRESSURE
X RAY DIFFRACTION
topic SILICON CARBIDE
HIGH PRESSURE
X RAY DIFFRACTION
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The starting temperature for SiC synthesis from elemental silicon, carbon black, and graphite powders was determined for pressures ranging from 0.8 to 11 GPa by in situ X-ray diffraction experiments. The synthesized SiC corresponds to the cubic 3C phase with the presence of stacking faults along the [111] direction. The lowest density of the stacking faults is achieved when black carbon is used instead of graphite. The minimum temperature to start the Si + C → SiC reaction slightly decreases when the pressure is increased up to 6 GPa and the reaction begins before silicon melts. For pressures higher than 8 GPa, the starting temperature increases, and the formation of SiC from the SiII phase requires the complete melting of silicon. Bulk modulus Bo= 236(14) GPa was obtained for the synthesized SiC phase.
Fil: Limandri, Silvina Paola. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
Fil: Garbarino, G.. European Synchrotron Radiation; Francia
Fil: Sifre, D.. European Synchrotron Radiation; Francia
Fil: Mezouar, M.. European Synchrotron Radiation; Francia
Fil: Galván Josa, Víctor Martín. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina
description The starting temperature for SiC synthesis from elemental silicon, carbon black, and graphite powders was determined for pressures ranging from 0.8 to 11 GPa by in situ X-ray diffraction experiments. The synthesized SiC corresponds to the cubic 3C phase with the presence of stacking faults along the [111] direction. The lowest density of the stacking faults is achieved when black carbon is used instead of graphite. The minimum temperature to start the Si + C → SiC reaction slightly decreases when the pressure is increased up to 6 GPa and the reaction begins before silicon melts. For pressures higher than 8 GPa, the starting temperature increases, and the formation of SiC from the SiII phase requires the complete melting of silicon. Bulk modulus Bo= 236(14) GPa was obtained for the synthesized SiC phase.
publishDate 2019
dc.date.none.fl_str_mv 2019-04-26
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/124878
Limandri, Silvina Paola; Garbarino, G.; Sifre, D.; Mezouar, M.; Galván Josa, Víctor Martín; Pressure dependence of the silicon carbide synthesis temperature; American Institute of Physics; Journal of Applied Physics; 125; 16; 26-4-2019; 165902
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/124878
identifier_str_mv Limandri, Silvina Paola; Garbarino, G.; Sifre, D.; Mezouar, M.; Galván Josa, Víctor Martín; Pressure dependence of the silicon carbide synthesis temperature; American Institute of Physics; Journal of Applied Physics; 125; 16; 26-4-2019; 165902
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5085839
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5085839
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846082980751081472
score 13.22299

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