Cita APA

Palumbo, F. R. M., Shekhter, P., & Eizenberg, M. (2014). Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs. Web

Citación estilo Chicago

Palumbo, Félix Roberto Mario, P. Shekhter, and M. Eizenberg. Influence of the Oxide–semiconductor Interface On the Resistive Switching Phenomenon in Metal/Al2O3/InGaAs. 2014.

Cita MLA

Palumbo, Félix Roberto Mario, P. Shekhter, and M. Eizenberg. Influence of the Oxide–semiconductor Interface On the Resistive Switching Phenomenon in Metal/Al2O3/InGaAs. 2014.