X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks

Autores
Shekhter, P.; Palumbo, Félix Roberto Mario; Cohen Weinfeld, K.; Eizenberg, M.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
Materia
Oxide-semiconductor interface
Reliability
MOS
X-ray photoelectron spectroscopy
Dielectric thin films
Ozone
III-V semiconductors
Interface structure
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/35950
Acceder
id CONICETDig_2c53f3bec0e3a53b4fcec32964e7ef51
oai_identifier_str oai:ri.conicet.gov.ar:11336/35950
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacksShekhter, P.Palumbo, Félix Roberto MarioCohen Weinfeld, K.Eizenberg, M.Oxide-semiconductor interfaceReliabilityMOSX-ray photoelectron spectroscopyDielectric thin filmsOzoneIII-V semiconductorsInterface structurehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.Fil: Shekhter, P.. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2014-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/35950Shekhter, P.; Palumbo, Félix Roberto Mario; Cohen Weinfeld, K.; Eizenberg, M.; X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 105; 10; 8-2014; 1-50003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4895627info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/abs/10.1063/1.4895627info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:11:12Zoai:ri.conicet.gov.ar:11336/35950instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:11:12.781CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
title X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
spellingShingle X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
Shekhter, P.
Oxide-semiconductor interface
Reliability
MOS
X-ray photoelectron spectroscopy
Dielectric thin films
Ozone
III-V semiconductors
Interface structure
title_short X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
title_full X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
title_fullStr X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
title_full_unstemmed X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
title_sort X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
dc.creator.none.fl_str_mv Shekhter, P.
Palumbo, Félix Roberto Mario
Cohen Weinfeld, K.
Eizenberg, M.
author Shekhter, P.
author_facet Shekhter, P.
Palumbo, Félix Roberto Mario
Cohen Weinfeld, K.
Eizenberg, M.
author_role author
author2 Palumbo, Félix Roberto Mario
Cohen Weinfeld, K.
Eizenberg, M.
author2_role author
author
author
dc.subject.none.fl_str_mv Oxide-semiconductor interface
Reliability
MOS
X-ray photoelectron spectroscopy
Dielectric thin films
Ozone
III-V semiconductors
Interface structure
topic Oxide-semiconductor interface
Reliability
MOS
X-ray photoelectron spectroscopy
Dielectric thin films
Ozone
III-V semiconductors
Interface structure
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; Israel
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
description In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga and As) were formed, while following breakdown under negative bias, a decrease of oxidized substrate atoms was observed. Such differences in the microstructure at the oxide-semiconductor interface after breakdown for positive and negative voltages are explained by atomic diffusion of the contact atoms into the gate dielectric in the region of the breakdown spot by the current induced electro-migration effect. These findings show a major difference between Al2O3/InGaAs and SiO2/Si interfaces, opening the way to a better understanding of the breakdown characteristics of III-V complementary-metal-oxide-semiconductor technology.
publishDate 2014
dc.date.none.fl_str_mv 2014-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/35950
Shekhter, P.; Palumbo, Félix Roberto Mario; Cohen Weinfeld, K.; Eizenberg, M.; X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 105; 10; 8-2014; 1-5
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/35950
identifier_str_mv Shekhter, P.; Palumbo, Félix Roberto Mario; Cohen Weinfeld, K.; Eizenberg, M.; X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 105; 10; 8-2014; 1-5
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4895627
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/abs/10.1063/1.4895627
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842270150336708608
score 13.13397

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