Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
- Autores
- Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; Vega, Nahuel Agustín; Müller, Nahuel Agustín; Debray, Mario Ernesto; Molina Reyes, Joel; Pey, Kin-Leong; Palumbo, Félix Roberto Mario
- Año de publicación
- 2021
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Ranjan, Alok. Singapore University of Technology and Design ; Singapur
Fil: Raghavan, Nagarajan. Singapore University of Technology and Design ; Singapur
Fil: Padovani, Andrea. Applied Materials—MDLx; Italia
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Müller, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina
Fil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; Argentina
Fil: Molina Reyes, Joel. Instituto Nacional de Astrofísica, Óptica y Electrónica; México
Fil: Pey, Kin-Leong. Singapore University of Technology and Design; Singapur
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina - Materia
-
BREAKDOWN
SPATIAL CORRELATION
HIGH-K - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/157851
Ver los metadatos del registro completo
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spelling |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defectsAguirre, Fernando LeonelRanjan, AlokRaghavan, NagarajanPadovani, AndreaPazos, Sebastián MatíasVega, Nahuel AgustínMüller, Nahuel AgustínDebray, Mario ErnestoMolina Reyes, JoelPey, Kin-LeongPalumbo, Félix Roberto MarioBREAKDOWNSPATIAL CORRELATIONHIGH-Khttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Ranjan, Alok. Singapore University of Technology and Design ; SingapurFil: Raghavan, Nagarajan. Singapore University of Technology and Design ; SingapurFil: Padovani, Andrea. Applied Materials—MDLx; ItaliaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Müller, Nahuel Agustín. Comisión Nacional de Energía Atómica; ArgentinaFil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; ArgentinaFil: Molina Reyes, Joel. Instituto Nacional de Astrofísica, Óptica y Electrónica; MéxicoFil: Pey, Kin-Leong. Singapore University of Technology and Design; SingapurFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaJapan Society Applied Physics2021-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/157851Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; et al.; Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects; Japan Society Applied Physics; Applied Physics Express; 14; 12; 10-2021; 1-51882-0778CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.35848/1882-0786/ac345dinfo:eu-repo/semantics/altIdentifier/doi/10.35848/1882-0786/ac345dinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:15:29Zoai:ri.conicet.gov.ar:11336/157851instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:15:29.926CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
title |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
spellingShingle |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects Aguirre, Fernando Leonel BREAKDOWN SPATIAL CORRELATION HIGH-K |
title_short |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
title_full |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
title_fullStr |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
title_full_unstemmed |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
title_sort |
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects |
dc.creator.none.fl_str_mv |
Aguirre, Fernando Leonel Ranjan, Alok Raghavan, Nagarajan Padovani, Andrea Pazos, Sebastián Matías Vega, Nahuel Agustín Müller, Nahuel Agustín Debray, Mario Ernesto Molina Reyes, Joel Pey, Kin-Leong Palumbo, Félix Roberto Mario |
author |
Aguirre, Fernando Leonel |
author_facet |
Aguirre, Fernando Leonel Ranjan, Alok Raghavan, Nagarajan Padovani, Andrea Pazos, Sebastián Matías Vega, Nahuel Agustín Müller, Nahuel Agustín Debray, Mario Ernesto Molina Reyes, Joel Pey, Kin-Leong Palumbo, Félix Roberto Mario |
author_role |
author |
author2 |
Ranjan, Alok Raghavan, Nagarajan Padovani, Andrea Pazos, Sebastián Matías Vega, Nahuel Agustín Müller, Nahuel Agustín Debray, Mario Ernesto Molina Reyes, Joel Pey, Kin-Leong Palumbo, Félix Roberto Mario |
author2_role |
author author author author author author author author author author |
dc.subject.none.fl_str_mv |
BREAKDOWN SPATIAL CORRELATION HIGH-K |
topic |
BREAKDOWN SPATIAL CORRELATION HIGH-K |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.10 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure. Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina Fil: Ranjan, Alok. Singapore University of Technology and Design ; Singapur Fil: Raghavan, Nagarajan. Singapore University of Technology and Design ; Singapur Fil: Padovani, Andrea. Applied Materials—MDLx; Italia Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina Fil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina Fil: Müller, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina Fil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; Argentina Fil: Molina Reyes, Joel. Instituto Nacional de Astrofísica, Óptica y Electrónica; México Fil: Pey, Kin-Leong. Singapore University of Technology and Design; Singapur Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina |
description |
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-10 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/157851 Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; et al.; Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects; Japan Society Applied Physics; Applied Physics Express; 14; 12; 10-2021; 1-5 1882-0778 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/157851 |
identifier_str_mv |
Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; et al.; Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects; Japan Society Applied Physics; Applied Physics Express; 14; 12; 10-2021; 1-5 1882-0778 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.35848/1882-0786/ac345d info:eu-repo/semantics/altIdentifier/doi/10.35848/1882-0786/ac345d |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Japan Society Applied Physics |
publisher.none.fl_str_mv |
Japan Society Applied Physics |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844614091357814784 |
score |
13.070432 |