Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Autores
Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; Vega, Nahuel Agustín; Müller, Nahuel Agustín; Debray, Mario Ernesto; Molina Reyes, Joel; Pey, Kin-Leong; Palumbo, Félix Roberto Mario
Año de publicación
2021
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Ranjan, Alok. Singapore University of Technology and Design ; Singapur
Fil: Raghavan, Nagarajan. Singapore University of Technology and Design ; Singapur
Fil: Padovani, Andrea. Applied Materials—MDLx; Italia
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Müller, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina
Fil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; Argentina
Fil: Molina Reyes, Joel. Instituto Nacional de Astrofísica, Óptica y Electrónica; México
Fil: Pey, Kin-Leong. Singapore University of Technology and Design; Singapur
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Materia
BREAKDOWN
SPATIAL CORRELATION
HIGH-K
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/157851
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/157851
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defectsAguirre, Fernando LeonelRanjan, AlokRaghavan, NagarajanPadovani, AndreaPazos, Sebastián MatíasVega, Nahuel AgustínMüller, Nahuel AgustínDebray, Mario ErnestoMolina Reyes, JoelPey, Kin-LeongPalumbo, Félix Roberto MarioBREAKDOWNSPATIAL CORRELATIONHIGH-Khttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Ranjan, Alok. Singapore University of Technology and Design ; SingapurFil: Raghavan, Nagarajan. Singapore University of Technology and Design ; SingapurFil: Padovani, Andrea. Applied Materials—MDLx; ItaliaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Müller, Nahuel Agustín. Comisión Nacional de Energía Atómica; ArgentinaFil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; ArgentinaFil: Molina Reyes, Joel. Instituto Nacional de Astrofísica, Óptica y Electrónica; MéxicoFil: Pey, Kin-Leong. Singapore University of Technology and Design; SingapurFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaJapan Society Applied Physics2021-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/157851Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; et al.; Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects; Japan Society Applied Physics; Applied Physics Express; 14; 12; 10-2021; 1-51882-0778CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.35848/1882-0786/ac345dinfo:eu-repo/semantics/altIdentifier/doi/10.35848/1882-0786/ac345dinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:45:40Zoai:ri.conicet.gov.ar:11336/157851instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:45:40.848CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
title Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
spellingShingle Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
Aguirre, Fernando Leonel
BREAKDOWN
SPATIAL CORRELATION
HIGH-K
title_short Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
title_full Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
title_fullStr Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
title_full_unstemmed Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
title_sort Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
dc.creator.none.fl_str_mv Aguirre, Fernando Leonel
Ranjan, Alok
Raghavan, Nagarajan
Padovani, Andrea
Pazos, Sebastián Matías
Vega, Nahuel Agustín
Müller, Nahuel Agustín
Debray, Mario Ernesto
Molina Reyes, Joel
Pey, Kin-Leong
Palumbo, Félix Roberto Mario
author Aguirre, Fernando Leonel
author_facet Aguirre, Fernando Leonel
Ranjan, Alok
Raghavan, Nagarajan
Padovani, Andrea
Pazos, Sebastián Matías
Vega, Nahuel Agustín
Müller, Nahuel Agustín
Debray, Mario Ernesto
Molina Reyes, Joel
Pey, Kin-Leong
Palumbo, Félix Roberto Mario
author_role author
author2 Ranjan, Alok
Raghavan, Nagarajan
Padovani, Andrea
Pazos, Sebastián Matías
Vega, Nahuel Agustín
Müller, Nahuel Agustín
Debray, Mario Ernesto
Molina Reyes, Joel
Pey, Kin-Leong
Palumbo, Félix Roberto Mario
author2_role author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv BREAKDOWN
SPATIAL CORRELATION
HIGH-K
topic BREAKDOWN
SPATIAL CORRELATION
HIGH-K
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Ranjan, Alok. Singapore University of Technology and Design ; Singapur
Fil: Raghavan, Nagarajan. Singapore University of Technology and Design ; Singapur
Fil: Padovani, Andrea. Applied Materials—MDLx; Italia
Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Müller, Nahuel Agustín. Comisión Nacional de Energía Atómica; Argentina
Fil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica; Argentina
Fil: Molina Reyes, Joel. Instituto Nacional de Astrofísica, Óptica y Electrónica; México
Fil: Pey, Kin-Leong. Singapore University of Technology and Design; Singapur
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
description The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
publishDate 2021
dc.date.none.fl_str_mv 2021-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/157851
Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; et al.; Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects; Japan Society Applied Physics; Applied Physics Express; 14; 12; 10-2021; 1-5
1882-0778
CONICET Digital
CONICET
url http://hdl.handle.net/11336/157851
identifier_str_mv Aguirre, Fernando Leonel; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías; et al.; Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects; Japan Society Applied Physics; Applied Physics Express; 14; 12; 10-2021; 1-5
1882-0778
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.35848/1882-0786/ac345d
info:eu-repo/semantics/altIdentifier/doi/10.35848/1882-0786/ac345d
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Japan Society Applied Physics
publisher.none.fl_str_mv Japan Society Applied Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846782154661429248
score 12.982451

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