A model for non-volatile electronic memory devices with strongly correlated materials

Autores
Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena
Año de publicación
2005
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos
Fil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Materia
Non-Volatile Memory
Resistance Switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/61192
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/61192
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling A model for non-volatile electronic memory devices with strongly correlated materialsRozenberg, Marcelo JavierInoue, I.H.Granados Sanchez, Maria JimenaNon-Volatile MemoryResistance Switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados UnidosFil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaElsevier Science Sa2005-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/61192Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-270040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2004.10.059info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-11-12T09:32:47Zoai:ri.conicet.gov.ar:11336/61192instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-11-12 09:32:47.919CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv A model for non-volatile electronic memory devices with strongly correlated materials
title A model for non-volatile electronic memory devices with strongly correlated materials
spellingShingle A model for non-volatile electronic memory devices with strongly correlated materials
Rozenberg, Marcelo Javier
Non-Volatile Memory
Resistance Switching
title_short A model for non-volatile electronic memory devices with strongly correlated materials
title_full A model for non-volatile electronic memory devices with strongly correlated materials
title_fullStr A model for non-volatile electronic memory devices with strongly correlated materials
title_full_unstemmed A model for non-volatile electronic memory devices with strongly correlated materials
title_sort A model for non-volatile electronic memory devices with strongly correlated materials
dc.creator.none.fl_str_mv Rozenberg, Marcelo Javier
Inoue, I.H.
Granados Sanchez, Maria Jimena
author Rozenberg, Marcelo Javier
author_facet Rozenberg, Marcelo Javier
Inoue, I.H.
Granados Sanchez, Maria Jimena
author_role author
author2 Inoue, I.H.
Granados Sanchez, Maria Jimena
author2_role author
author
dc.subject.none.fl_str_mv Non-Volatile Memory
Resistance Switching
topic Non-Volatile Memory
Resistance Switching
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos
Fil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
description The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
publishDate 2005
dc.date.none.fl_str_mv 2005-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/61192
Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/61192
identifier_str_mv Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2004.10.059
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1848597009221550080
score 12.976206

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