A model for non-volatile electronic memory devices with strongly correlated materials
- Autores
- Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena
- Año de publicación
- 2005
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos
Fil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina - Materia
-
Non-Volatile Memory
Resistance Switching - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/61192
Ver los metadatos del registro completo
id |
CONICETDig_18b26d43bc7b0fa8230928eedaec3c71 |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/61192 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
A model for non-volatile electronic memory devices with strongly correlated materialsRozenberg, Marcelo JavierInoue, I.H.Granados Sanchez, Maria JimenaNon-Volatile MemoryResistance Switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados UnidosFil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaElsevier Science Sa2005-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/61192Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-270040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2004.10.059info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:32:56Zoai:ri.conicet.gov.ar:11336/61192instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:32:57.148CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
A model for non-volatile electronic memory devices with strongly correlated materials |
title |
A model for non-volatile electronic memory devices with strongly correlated materials |
spellingShingle |
A model for non-volatile electronic memory devices with strongly correlated materials Rozenberg, Marcelo Javier Non-Volatile Memory Resistance Switching |
title_short |
A model for non-volatile electronic memory devices with strongly correlated materials |
title_full |
A model for non-volatile electronic memory devices with strongly correlated materials |
title_fullStr |
A model for non-volatile electronic memory devices with strongly correlated materials |
title_full_unstemmed |
A model for non-volatile electronic memory devices with strongly correlated materials |
title_sort |
A model for non-volatile electronic memory devices with strongly correlated materials |
dc.creator.none.fl_str_mv |
Rozenberg, Marcelo Javier Inoue, I.H. Granados Sanchez, Maria Jimena |
author |
Rozenberg, Marcelo Javier |
author_facet |
Rozenberg, Marcelo Javier Inoue, I.H. Granados Sanchez, Maria Jimena |
author_role |
author |
author2 |
Inoue, I.H. Granados Sanchez, Maria Jimena |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Non-Volatile Memory Resistance Switching |
topic |
Non-Volatile Memory Resistance Switching |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases. Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina Fil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos Fil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina |
description |
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases. |
publishDate |
2005 |
dc.date.none.fl_str_mv |
2005-12 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/61192 Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27 0040-6090 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/61192 |
identifier_str_mv |
Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27 0040-6090 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2004.10.059 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science Sa |
publisher.none.fl_str_mv |
Elsevier Science Sa |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844613008490233856 |
score |
13.070432 |